MJE15031G

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high−frequency drivers in audio amplifiers. Features http://onsemi.com 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit NPN COLLECTOR 2,4 COLLECTOR 2,4 Collector−Emitter Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCEO Collector−Base Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCB Emitter−Base Voltage VEB 5.0 Vdc IC 8.0 Adc 3 EMITTER ICM 16 Adc 4 Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 50 0.40 W W/_C Total Device Dissipation @ TA = 25_C Derate above 25°C PD 2.0 0.016 W W/_C −65 to +150 _C 120 150 Operating and Storage Junction Temperature Range Vdc 120 150 Collector Current − Continuous Collector Current − Peak Vdc PNP TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 BASE 1 BASE 3 EMITTER TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Symbol Max Unit MJE150xxG Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W AY WW Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Characteristics MJE150xx = Device Code x = 28, 29, 30, or 31 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 7 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: MJE15028/D MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) MJE15028, MJE15029 MJE15030, MJE15031 Vdc 120 150 Collector Cutoff Current (VCE = 120 Vdc, IB = 0) MJE15028, MJE15029 (VCE = 150 Vdc, IB = 0) MJE15030, MJE15031 ICEO Collector Cutoff Current (VCB = 120 Vdc, IE = 0) MJE15028, MJE15029 (VCB = 150 Vdc, IE = 0) MJE15030, MJE15031 ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − mAdc − 0.1 − 0.1 mAdc − 10 − 10 − 10 40 40 40 20 − − − − mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) hFE DC Current Gain Linearity (VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) (NPN to PNP) hFE Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − Typ 2 3 Vdc − 0.5 − 1.0 30 − Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT MHz PD, POWER DISSIPATION (WATTS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = ⎪hfe⎪• ftest. TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 140 160 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.07 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k IC, COLLECTOR CURRENT (AMP) Figure 2. Thermal Response 20 16 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 5ms dc 1.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25°C 0.1 0.02 2.0 MJE15028 MJE15029 MJE15030 MJE15031 5.0 10 50 20 120 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area 1000 8.0 Cib (NPN) Cib (PNP) C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 500 5.0 IC/IB = 10 TC = 25°C 3.0 VBE(off) = 9 V 2.0 0 0 100 Cob (PNP) 50 30 5V 3V 1.0 200 Cob (NPN) 20 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 1.5 3.0 5.0 7.0 10 30 50 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Figure 4. Reverse−Bias Switching Safe Operating Area http://onsemi.com 3 100 150 fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) hfe , SMALL SIGNAL CURRENT GAIN 100 50 30 VCE = 10 V IC = 0.5 A TC = 25°C 20 PNP NPN 10 5.0 0.5 2.0 3.0 f, FREQUENCY (MHz) 1.0 0.7 5.0 7.0 10 100 90 (PNP) (NPN) 60 50 20 10 0 0.1 0.2 NPN — MJE15028 MJE15030 1K 500 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 2 V VCE = 2.0 V 500 TJ = 150°C TJ = 25°C TJ = -55°C 30 20 10 0.1 10 PNP — MJE15029 MJE15031 1K 100 70 50 5.0 Figure 7. Current Gain−Bandwidth Product Figure 6. Small−Signal Current Gain 200 150 1.0 0.5 2.0 IC, COLLECTOR CURRENT (AMP) TJ = 150°C 200 TJ = 25°C 100 TJ = -55°C 50 20 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 0.1 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 Figure 8. DC Current Gain NPN PNP TJ = 25°C 1.8 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 1.4 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.4 VCE(sat) = IC/IB = 20 0.2 VCE(sat) = IC/IB = 20 IC/IB = 10 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 0 0.1 10 Figure 9. “On” Voltage http://onsemi.com 4 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC/IB = 10 5.0 10 MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) 10 1.0 VCC = 80 V IC/IB = 10 TJ = 25°C 0.5 VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25°C 5.0 t, TIME (s) μ t, TIME (s) μ 3.0 td (NPN, PNP) tr (PNP) 0.2 0.1 ts (PNP) 1.0 0.5 0.05 tf (PNP) tr (NPN) 0.03 0.02 0.01 0.1 2.0 0.2 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 0.1 0.1 10 tf (NPN) 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) Figure 11. Turn−Off Times Figure 10. Turn−On Times ORDERING INFORMATION Device Package Shipping MJE15028G TO−220 (Pb−Free) 50 Units / Rail MJE15029G TO−220 (Pb−Free) 50 Units / Rail MJE15030G TO−220 (Pb−Free) 50 Units / Rail MJE15031G TO−220 (Pb−Free) 50 Units / Rail http://onsemi.com 5 5.0 10 MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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