MMBT3416LT3G

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Other names and brands may be claimed as the property of others. MMBT3416LT3G General Purpose Amplifier NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Emitter −Base Voltage VEBO 4.0 Vdc IC 100 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C 3 PD Thermal Resistance, Junction−to−Ambient RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. GP MG G 1 GP = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT3416LT3G Package Shipping† SOT−23 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1998 June, 2018 − Rev. 4 1 Publication Order Number: MMBT3416LT3/D MMBT3416LT3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO1 − 100 nAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 100 nAdc DC Current Gain (IC = 2.0 mAdc, VCE = 4.5 Vdc) hFE 75 225 − Collector −Emitter Saturation Voltage (IC = 50 mAdc, IB = 3.0 mAdc) VCE(sat) − 0.3 Vdc Base −Emitter Saturation Voltage (IC = 50 mAdc, IB = 3.0 mAdc) VBE(sat) 0.6 1.3 Vdc ICBO2 − 15 mAdc hFE 75 − − OFF CHARACTERISTICS ON CHARACTERISTICS SMALL− SIGNAL CHARACTERISTICS Collector Cutoff Current (VCB = 18 Vdc, TA = 100°C) Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V +3.0 V 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +10.9 V 10 k -0.5 V