NSS1C200LT1G

NSS1C200L, NSV1C200L Low VCE(sat) Transistor, PNP, 100 V, 2.0 A ON Semiconductor’s e 2PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com −100 VOLTS, 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE Features • NSV Prefix for Automotive and Other Applications Requiring • 2 EMITTER Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −100 Vdc Collector-Base Voltage VCBO −140 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −2.0 A ICM −3.0 A Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 490 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 255 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 710 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 176 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Rating Collector Current − Continuous Collector Current − Peak 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM VL MG G THERMAL CHARACTERISTICS Characteristic Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2007 October, 2016 − Rev. 6 1 1 VL = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS1C200LT1G, NSV1C200LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C200L/D NSS1C200L, NSV1C200L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −140 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc −100 Vdc −140 Vdc −7.0 nAdc −100 nAdc −50 ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) 150 120 80 50 Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.01 A) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.100 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) 240 360 V −0.040 −0.080 −0.115 −0.250 V −0.950 V −0.850 Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 200 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 22 pF 120 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (W) 0.60 0.50 Note 2 0.40 0.30 Note 1 0.20 0.10 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 2 140 160 NSS1C200L, NSV1C200L 500 500 VCE = 2 V 150°C 25°C 200 −55°C 100 0.01 0.1 1 25°C 200 −55°C 100 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain Figure 3. DC Current Gain 1 0.1 150°C 25°C −55°C 0.01 0.001 300 0 0.001 10 0.01 0.1 IC/IB = 10 1 10 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 0 0.001 VBE(sat), BASE−EMITTER VOLTAGE (V) DC, CURRENT GAIN 300 400 10 1 150°C 0.1 25°C −55°C 0.01 0.001 IC/IB = 50 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage 1.2 1.0 VBE(sat), BASE−EMITTER VOLTAGE (V) DC, CURRENT GAIN 400 VCE = 4 V 150°C −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 IC/IB = 10 0.01 0.1 1 10 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 IC/IB = 50 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage Figure 7. Base−Emitter Saturation Voltage www.onsemi.com 3 10 VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 VCE = 2 V 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) NSS1C200L, NSV1C200L 1.00 TJ = 25°C 3A 1A 0.10 0.5 A IC = 0.1 A 0.01 1.0E−04 1.0E−02 1.0E−01 1.0E+00 Figure 9. Collector Saturation Region 400 80 COBO, OUTPUT CAPACITANCE (pF) TJ = 25°C fTEST = 1 MHz 300 200 100 0 0 1 2 3 4 5 6 7 8 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 VCB, COLLECTOR BASE VOLTAGE (V) Figure 11. Output Capacitance 100 10 TJ = 25°C fTEST = 1 MHz VCE = 10 V 10 ms 100 80 60 40 20 0 0.001 60 Figure 10. Input Capacitance 140 120 TJ = 25°C fTEST = 1 MHz 70 VCE, EMITTER BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) CIBO, INPUT CAPACITANCE (pF) 1.0E−03 IB, BASE CURRENT (A) Figure 8. Base−Emitter Saturation Voltage fTau, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 2A 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 1 ms 1 100 ms Thermal Limit 0.1 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. www.onsemi.com 4 100 NSS1C200L, NSV1C200L 1000 D = 0.5 R(t), (°C/W) 100 D = 0.2 D = 0.1 D = 0.05 10 D = 0.02 D = 0.01 1 0.1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 14. Transient Thermal Resistnce www.onsemi.com 5 1.0 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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