NSV1C201MZ4T1G

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 100 VOLTS, 2.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 2,4 1 BASE Features 3 EMITTER • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 2.0 A ICM 3.0 A Symbol Max Unit 800 6.5 mW mW/°C 155 °C/W 2.0 15.6 W mW/°C Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 64 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 710 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C March, 2013 − Rev. 4 A Y W 1C201 G AYW 1C201G 1 = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 C B C E 1 2 3 Top View Pinout ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 7.6 mm2, 1 oz. copper traces. 2. FR−4 @ 645 mm2, 1 oz. copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2013 SOT−223 CASE 318E STYLE 1 1 Device Package Shipping† NSS1C201MZ4T1G NSV1C201MZ4T1G SOT−223 (Pb−Free) 1000/ Tape & Reel NSS1C201MZ4T3G SOT−223 (Pb−Free) 4000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C201MZ4/D NSS1C201MZ4, NSV1C201MZ4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 100 Vdc Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 140 Vdc Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 7.0 Vdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 140 Vdc, IE = 0) ICBO 100 nA Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO 50 nA ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (IC = 0.1 A, IB = 0.010 A) (IC = 0.5 A, IB = 0.050 A) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.100 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) 150 120 80 40 360 V 0.030 0.060 0.100 0.180 V 1.10 0.850 V fT 100 MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo 305 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo 22 pF 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (W) 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 NSS1C201MZ4, NSV1C201MZ4 TYPICAL CHARACTERISTICS 400 400 VCE = 2 V 150°C 320 360 hRE, DC CURRENT GAIN hRE, DC CURRENT GAIN 360 280 240 25°C 200 160 120 −55°C 80 280 240 160 120 −55°C 80 40 0 0.001 0.01 0.1 1 0 0.001 10 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain Figure 3. DC Current Gain 10 1 IC /IB = 20 VCE(sat), COLLECTOR−EMITTER SATURATOIN VOLTAGE (V) IC /IB = 10 0.1 150°C 25°C 0.1 150°C 25°C 0.01 0.001 0.01 −55°C 0.1 1 10 −55°C 0.01 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage 1.4 1.4 IC /IB = 10 VBE(sat), BASE−EMITTER SATURATOIN VOLTAGE (V) 1.2 0.01 IC, COLLECTOR CURRENT (A) 1 VBE(sat), COLLECTOR−EMITTER SATURATOIN VOLTAGE (V) 25°C 200 40 VBE(sat), BASE−EMITTER SATURATOIN VOLTAGE (V) VCE = 4 V 150°C 320 1 150°C 0.8 0.6 25°C 0.4 −55°C 0.2 0 0.001 0.01 0.1 1 10 1.2 IC /IB = 50 −55°C 1 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage Figure 7. Base−Emitter Saturation Voltage http://onsemi.com 3 10 NSS1C201MZ4, NSV1C201MZ4 TYPICAL CHARACTERISTICS 1.00 VCE = 2 V VCE(sat), COLLECTOR−EMITTER SATURATOIN VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.0 0.001 0.01 0.1 1 0.5 A 1A 2A 0.10 TJ = 25°C 0.01 0.0001 10 0.001 IC, COLLECTOR CURRENT (A) 1 50 TJ = 25°C fTEST = 1 MHz 350 COB, OUTPUT CAPACITANCE (pF) CIB, INPUT CAPACITANCE (pF) 0.1 Figure 9. Collector Saturation Region 400 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 45 TJ = 25°C fTEST = 1 MHz 40 35 30 25 20 15 10 5 0 0 8 10 20 30 40 50 60 70 80 90 100 VCB, COLLECTOR BASE VOLTAGE (V) VEB, BASE−EMITTER VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 120 10 TJ = 25°C fTEST = 1 MHz VCE = 5 V IC, COLLECTOR CURRENT (A) fTau, CURRENT GAIN BANDWIDTH (MHz) 0.01 IB, BASE CURRENT (A) Figure 8. Base−Emitter Voltage 100 3A IC = 0.1 A 80 60 40 20 0 0.001 0.01 0.1 1 10 0.5 mS 1 100 mS 1 mS 10 mS 0.1 TJ = 25°C 0.01 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 4 100 NSS1C201MZ4, NSV1C201MZ4 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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