NTB011N15MC

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Other names and brands may be claimed as the property of others. MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features • • • • • • www.onsemi.com Shielded Gate MOSFET Technology Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 41 A 50% Lower Qrr than other MOSFET Suppliers Lowers Switching Noise/EMI 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 150 V 10.9 mW @ 10 V 75.4 A D Typical Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V ID 75.4 A MARKING DIAGRAM PD 136.4 W 4 Drain ID 12.5 A Parameter Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Steady State TC = 25°C 4 Steady State 3.75 W IDM 323 A TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy (IL = 14 Apk, L = 3 mH) EAS 294 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TC = 25°C, tp = 100 ms Operating Junction and Storage Temperature Range 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. NTB011 N15MC AYWWZZ D2PAK TO−263 CASE 418AJ 3 TA = 25°C PD Pulsed Drain Current N−CHANNEL MOSFET 1 Gate 2 Drain 3 Source NTB011N15MC = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device NTB011N15MC Package Shipping† D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2018 December, 2020 − Rev. 1 1 Publication Order Number: NTB011N15MC/D NTB011N15MC THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 1.1 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min 150 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 120 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V V 83 TJ = 25°C mV/°C 1.0 ±100 mA nA ON CHARACTERISTICS VGS(TH) VGS = VDS, ID = 223 mA VGS(TH)/TJ ID = 223 mA, ref to 25°C −8.5 RDS(on) VGS = 10 V, ID = 41 A 8.7 10.9 VGS = 8 V, ID = 20 A 9.3 12.6 VDS = 10 V, ID = 41 A 85 Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance gFS 2.5 4.5 V mV/°C mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 2810 Reverse Transfer Capacitance CRSS 14 Gate−Resistance RG 0.8 Total Gate Charge QG(TOT) 37 Threshold Gate Charge QG(TH) 9.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 6.5 Plateau Voltage VGP 5.4 V Output Charge QOSS 95 nC VGS = 0 V, f = 1 MHz, VDS = 75 V VGS = 10 V, VDS = 75 V; ID = 41 A VDD = 75 V, VGS = 0 V 840 pF 1.6 W nC 15 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 19 VGS = 10 V, VDD = 75 V, ID = 41 A, RG = 4.7 W tf 14 ns 28 5.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 41 A TJ = 25°C VGS = 0 V, VDD = 75 V dIS/dt = 300 A/ms, IS = 41 A VGS = 0 V, VDD = 75 V dIS/dt = 1000 A/ms, IS = 41 A 0.92 1.2 V 49 ns 210 nC 36 ns 421 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTB011N15MC TYPICAL CHARACTERISTICS 10 V 6 7.0 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 190 8.0 V 152 114 6.0 V 76 VGS = 5.5 V 38 0 0 2 4 8 6 10 5 4 3 8V 7V 2 1 0 10 V 0 76 38 114 190 152 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 60 ID = 41 A VGS = 10 V 2.2 RDS(on), ON−RESISTANCE (mW) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID, DRAIN CURRENT (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 40 30 TJ = 150°C 20 10 TJ = 25°C 4 5 6 8 7 9 10 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs. Junction Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage IS, REVERSE DRAIN CURRENT (A) VDS = 10 V 152 114 TJ = 25°C 76 38 TJ = 175°C 2 ID = 41 A 50 0 190 ID, DRAIN CURRENT (A) 6V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.4 0 VGS = 5.5 V 3 4 TJ = −55°C 5 6 7 200 100 10 1 0.1 TJ = 175°C 0.01 0.001 8 VGS = 0 V TJ = −55°C TJ = 25°C 0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.4 NTB011N15MC 10 10K VDD = 50 V ID = 41 A 8 VDD = 75 V CISS VDD = 100 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 6 4 2 0 10 0 30 20 10 100 150 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage 100K PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 1 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 8 V RqJC = 1.1°C/W 50 25 75 125 100 150 10K 1K 100 10 0.00001 175 0.0001 0.001 0.01 0.1 TC, CASE TEMPERATURE (°C) t, PULSE WIDTH (s) Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power 100 1 1000 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) CRSS Qg, GATE CHARGE (nC) 30 TJ(initial) = 25°C TJ(initial) = 100°C TJ(initial) = 150°C 10 1 10 1 40 VGS = 10 V 0 100 f = 1 MHz VGS = 0 V 90 60 COSS 1K 0.001 0.01 0.1 1 10 10 ms 100 100 ms 10 1 0.1 100 TC = 25°C Single Pulse RqJC = 1.1°C/W RDS(on) Limit Thermal Limit Package Limit 0.1 1 1 ms 10 ms 100 ms/DC 10 100 200 tAV, TIME IN AVALANCHE (mS) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Unclamped Inductive Switching Capability Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 NTB011N15MC ZqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 P DM Single Pulse t1 t2 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Impedance www.onsemi.com 5 Notes: RqJC = 1.1°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 NTB011N15MC PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE E ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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