NZT751

NZT751 PNP Current Driver Transistor Description 4 This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from Process 5P. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method NZT751 751 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -80 V VEBO Emitter-Base Voltage -5 V Collector Current - Continuous -4 A -55 to +150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty cycle operation. © 1998 Fairchild Semiconductor Corporation NZT751 Rev. 1.1.0 www.fairchildsemi.com 1 NZT751 — PNP Current Driver Transistor January 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 1.2 W Derate Above 25°C 9.7 mW/°C Thermal Resistance, Junction to Ambient 103 °C/W Note: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -60 V BVCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -80 V BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V ICBO Collector-Base Cut-Off Current VCB = -80 V, IE = 0 -100 nA IEBO Emitter-Base Cut-Off Current VEB = -4.0 V, IC = 0 -0.1 μA hFE VCE(sat) DC Current Gain(4) Collector-Emitter Saturation Voltage(4) IC = -50 mA, VCE = -2.0 V 75 IC = -500 mA, VCE = -2.0 V 75 IC = -1.0 A, VCE = -2.0 V 75 IC = -2.0 A, VCE = -2.0 V 40 IC = -1.0 A, IB = -100 mV -0.3 IC = -2.0 A, IB = -200 mV -0.5 V VBE(sat) Base-Emitter Saturation Voltage(4) IC = -1.0 A, IB = -100 mV -1.2 V VBE(on) Base-Emitter On Voltage(4) IC = -1.0 A, VCE = -2.0 V -1.0 V fT Current Gain - Bandwidth Product IC = -50 mA, VCE = -5.0 V, f = 100 MHz 75 MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation NZT751 Rev. 1.1.0 www.fairchildsemi.com 2 NZT751 — PNP Current Driver Transistor Thermal Characteristics(3) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.6 140 VCE = 5V 120 100 0.3 25 °C 60 0.2 - 40 °C 0 0.01 IC 0.1 1 - COLLECTOR CURRENT (A) 10 0 0.1 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) 2 1.2 1.5 1 0.8 - 40 ºC 1 25 °C 125 °C VCE= 5V 0.2 1 I C - COLLECTOR CURRENT (A) 10 0.1 1 I C - COLLECTOR CURRENT (A) 10 Figure 4. Base-Emitter On Voltage vs. Collector Current 1.2 P D - POWER DISSIPATION (W) 500 VCB= 50V 10 1 50 75 100 125 TA - AMBIENT TEMPERATURE (ºC) 150 1 SOT-223 0.8 0.6 0.4 0.2 0 Figure 5. Collector Cut-Off Current vs. Ambient Temperature 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Figure 6. Power Dissipation vs. Ambient Temperature © 1998 Fairchild Semiconductor Corporation NZT751 Rev. 1.1.0 25 °C 0.4 Figure 3. Base-Emitter Saturation Voltage vs. Collector Current 0.1 25 - 40 ºC 0.6 125 °C 0.5 100 5 1.4 β = 10 0.1 1 I C - COLLECTOR CURRENT (A) Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector Current ICBO- COLLECTOR CURRENT (nA) 25 °C - 40 ºC 0.1 20 VBESAT- BASE-EMITTER VOLTAGE (V) 125 °C 0.4 125 °C 80 40 β = 10 0.5 www.fairchildsemi.com 3 NZT751 — PNP Current Driver Transistor Typical Performance Characteristics NZT751 — PNP Current Driver Transistor Physical Dimensions SOT-223 Figure 7. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. © 1998 Fairchild Semiconductor Corporation NZT751 Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com