Naina Semiconductor Ltd. emiconductor
General Purpose Rectifier, 1.0A
Features
• • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability
1N4007
Mechanical Characteristics • Case: Molded Plastic
• • • • Cathode indicated by Polarity band Mounting position: Any Terminals: Finish Tin plated, Solderable per Solderable MIL-STD-202, Method 208 Weight: 0.33 grams (approx.)
DO-41
Maximum Ratings (TA = 250C unless otherwise specified) unless Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) single half sine-wave ms) superimposed on rated load Symbol VRRM VRMS VDC IF(AV) IFSM MUR420 1000 700 1000 1.0 30 Units V V V A A
Electrical Characteristics (TA = 250C unless otherwise specified) Parameters Maximum DC forward voltage drop @ 1.0A DC Maximum DC reverse current @ rated DC blocking Maximum voltage Rating for fusing (t < 8.3ms) TA = 250C TA = 1000C Symbol VF IR I2t MUR420 1.0 5.0 50 3.7 Units V µA A2sec
Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Typical thermal resistance, junction to ambient Operating and Storage temperature range Symbol RθJA TJ , TStg Values 75 - 65 to + 150 Units 0 C/W
0
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com
Naina Semiconductor Ltd. emiconductor
1N4007
D imensions in inches and (millimeters)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 4205450 sales@nainasemi.com • www.nainasemi.com sales@nainasemi.com
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