CNA1301H

Transmissive Photosensors (Photo lnterrupters) CNA1301H Photo lnterrupter Unit: mm Input (Light Reverse voltage VR 6 V IF 50 mA Power dissipation *1 PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 35 V Emitter-collector voltage (Base open) VECO 6 V Collector current IC 20 mA Collector power dissipation *2 PC 75 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C Temperature 0.6 (1.1) 3.8 (C0.3) 4-0.25 3.4 4.3 0.7 3-1.4 A 2-1.7±0.1 A' Not solderd 1.0 max. 1.5±0.1 2-φ0.7±0.1 1: Anode 2: Cathode 3: Collector 4 2 4: Emitter PISMW104-001 Package (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference Resin 1 the rest Unit emitting diode) Forward current SEC. A-A' 4.2 Optical center ■ Absolute Maximum Ratings Ta = 25°C Rating 1.6 1.2 • Ultraminiature: 3.8 mm × 4.2 mm (height: 4.3 mm) • Highly precise position detection: 0.15 mm • Gap width: 1.4 mm • Support for thin equipment (permits direct mounting on printed circuit board) Symbol Slit width (0.3) 2.0±0.5 ■ Features Parameter 2.0 3.4 CNA1301H is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. 2.54 ■ Overview 2.0 3.1 4-0.5 For contactless SW, object detection 3 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Symbol Forward voltage characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Transfer Collector current Conditions Typ Max Unit 1.2 1.4 V VR = 3 V 10 µA VCE = 20 V 100 nA 1 300 µA VF IF = 20 mA IR ICEO IC characteristics Collector-emitter saturation voltage VCE(sat) Min VCE = 5 V, IF = 5 mA 100 IF = 10 mA, IC = 50 µA 0.4 V Rise time * tr VCC = 5 V, IC = 0.1 mA 35 µs Fall time * tf RL = 1 000 Ω 35 µs Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out 50Ω Publication date: April 2004 RL 90% 10% (Output pulse) tr SHG00021BED tr : Rise time tf : Fall time tf 1 CNA1301H IF , I C  T a IF  V F 60 1.6 Ta = 25°C IF 50 IF = 50 mA 50 40 30 IC 20 10 40 30 20 10 mA 1 mA 0.8 0.4 10 0 20 40 60 80 0 100 0 0.4 0.8 Ambient temperature Ta (°C ) IC  I F 5 1.2 1.6 2.0 0 −40 2.4 0 IC  VCE 3 VCE = 5 V Ta = 25°C Collector current IC (mA) 2 120 Ta = 25°C VCE = 5 V IF = 5 mA 2 IF = 20 mA 1 15 mA 1 80 ∆IC  Ta 4 3 40 Ambient temperature Ta (°C ) Forward voltage VF (V) 10 mA Relative collector current ∆IC (%) 0 −25 Collector current IC (mA) 1.2 Forward voltage VF (V) Forward current IF (mA) Forward current IF , collector current IC (mA) 60 VF  T a 100 80 60 40 20 5 mA 2 mA 0 0 5 10 15 20 0 25 Forward current IF (mA) 0 1 2 0 −40 6 0 40 80 Ambient temperature Ta (°C ) tf  I C 103 VCE = 20 V 103 VCC = 5 V Ta = 25°C VCC = 5 V Ta = 25°C 10 −1 10 −2 10 −3 102 Fall time tf (µs) 102 Rise time tr (µs) Collector-emitter cutoff current (Base open) ICEO (µA) 5 tr  I C RL = 2 kΩ 1 kΩ 10 100 Ω 1 RL = 2 kΩ 1 kΩ 10 100 Ω 1 10 −4 10 −5 −40 0 40 80 Ambient temperature Ta (°C ) 2 4 Collector-emitter voltage VCE (V) ICEO  Ta 1 3 10 −1 10 −2 10 −1 1 Collector current IC (mA) SHG00021BED 10 10 −1 10 −2 10 −1 1 Collector current IC (mA) 10 CNA1301H ∆IC  d (1) ∆IC  d (2) 100 VCE = 5 V Ta = 25°C IF = 5 mA Relative collector current ∆IC (%) Relative collector current ∆IC (%) 100 80 Criterion 0 d 60 40 20 0 0 1 2 3 Distance d (mm) 4 VCE = 5 V Ta = 25°C IF = 5 mA 80 Criterion 0 d 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 Distance d (mm) SHG00021BED 3 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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