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N01M0818L1AN

N01M0818L1AN

  • 厂商:

    NANOAMP

  • 封装:

  • 描述:

    N01M0818L1AN - 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit - NanoAmp Solutions, In...

  • 数据手册
  • 价格&库存
N01M0818L1AN 数据手册
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01M0818L1A 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit Overview The N01M0818L1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N01M0818L2A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01M0818L1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs Features • Single Wide Power Supply Range 1.4 to 2.3 Volts - STSOP package • Dual Power Supply - Die Only 1.4 to 2.3 Volts - VCC 1.4 to 3.6 Volts - VCCQ • Very low standby current 200nA maximum at 2.0V and 37 deg C • Very low operating current 1 mA at 2.0V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.2V • Automatic power down to standby mode • Special Processing to reduce Soft Error Rate (SER) Product Family Part Number N01M0818L1AN Package Type 32 - STSOP I Operating Temperature -40oC to +85oC Power Supply (Vcc) 1.4V - 2.3V Speed 85ns @ 1.7V 150ns @ 1.4V Standby Current (ISB), Max 20 µA Operating Current (Icc), Max 2.5 mA @ 1MHz N01M0818L1AD Known Good Die Pin Configuration A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3 Pin Descriptions Pin Name A0-A16 WE CE1, CE2 OE I/O0-I/O7 VCCQ VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Output Power (die only) Power Ground N01M0818L1A STSOP Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 NanoAmp Solutions, Inc. Functional Block Diagram VCCQ VCC VSS Address Inputs A0 - A3 N01M0818L1A Word Address Decode Logic Word Mux Address Inputs A4 - A16 Page Address Decode Logic 8K Page x 16 word x 8 bit RAM Input/ Output Mux and Buffers I/O0 - I/O7 CE1 CE2 WE OE Functional Description CE1 H X L L L CE2 X L H H H WE X X L H H Control Logic OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF VIN = 0V, f = 1 MHz, TA = 25oC 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 NanoAmp Solutions, Inc. Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER N01M0818L1A Rating –0.3 to VCC+0.3 –0.3 to 4.5 500 –40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V V mW o C oC oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Item Core Supply Voltage I/O Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 µs Cycle Time2 Read/Write Operating Supply Current @ 85 ns Cycle Time2 Page Mode Operating Supply Current @ 85 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) Read/Write Quiescent Operating Supply Current3 Symbol VCC VCCQ VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0, f=0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.3 V VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1.5 10.0 VCCQ > or = VCC Chip Disabled3 Test Conditions Min. 1.4 1.4 1.2 VCCQ-0.6 –0.3 VCCQ–0.2 0.2 0.1 0.1 2.5 13.0 VCCQ+0.3 0.6 Typ1 1.8 1.8 Max 2.3 3.6 Unit V V V V V V V µA µA mA mA ICC3 3.5 mA ICC4 0.2 µA Standby Current3 ISB1 0.2 20.0 µA Data Retention Current3 IDR 0.1 1.0 µA 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 3 NanoAmp Solutions, Inc. Power Savings with Page Mode Operation (WE = VIH) N01M0818L1A Page Address (A4 - A16) Open page ... Word Address (A0 - A3) Word 1 Word 2 Word 16 CE1 CE2 OE Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 4 NanoAmp Solutions, Inc. Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature N01M0818L1A 0.1VCC to 0.9 VCC 5ns 0.5 VCC CL = 30pF -40 to +85 oC Timing VCCQ > or = VCC Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAW tWP tAS tWR tWHZ tDW tDH tOW 50 0 10 20 20 0 0 20 150 75 75 50 0 0 30 40 0 5 30 30 VCC = 1.4 - 2.3 V Min. 150 150 150 50 10 5 0 0 10 85 50 50 40 0 0 15 15 15 Max. VCC = 1.7 - 2.3 V Min. 85 85 85 40 Max. Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 5 NanoAmp Solutions, Inc. N01M0818L1A tRC Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) Address tAA tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA tHZ CE1 tCO CE2 tLZ tOE OE tOLZ Data Out High-Z Data Valid tOHZ Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 6 NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) tWC Address tAW CE1 tCW CE2 tAS WE tDW High-Z Data In tWHZ Data Out tWP N01M0818L1A tWR tDH Data Valid tOW High-Z Timing Waveform of Write Cycle (CE1 Control) tWC Address tAW CE1 (for CE2 Control, use inverted signal) tAS tCW tWR tWP WE tDW Data In tLZ Data Out tWHZ tDH Data Valid High-Z Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 7 NanoAmp Solutions, Inc. 32-Lead STSOP-I Package (N32) N01M0818L1A 11.80±0.10 0.50mm REF 8.0±0.10 0.27 0.17 13.40±0.20 SEE DETAIL B DETAIL B 1.10±0.15 0o-8o 0.20 0.00 0.80mm REF Note: 1. All dimensions in millimeters 2. Package dimensions exclude molding flash Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 8 NanoAmp Solutions, Inc. Ordering Information N01M0818L1A N01M0818L1AX-XX X Temperature I = Industrial, -40°C to 85°C Performance 85 = 85ns @ 1.8V Package Type N = 32-pin STSOP I D = Known Good Die Revision History Revision # 01 Date 11/01/02 Change Description Initial Release © 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments. Stock No. 23205-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 9
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