N02M0818L2AD

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L2A 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview The N02M0818L2A is an integrated memory device intended for implanted life-support (Class 3) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N02M0818L1A, which is intended for non life-support (Class 1 and 2) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N02M0818L2A is optimal for various applications where low-power is critical such as implanted pacemaker devices. The device can operate over a very wide temperature range of -20oC to +60oC and is available in die form as well as in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs Features • Single Wide Power Supply Range 1.3 to 2.3 Volts • Very low standby current 200nA typical at 2.1V and 37 deg C • Very low operating current 1 mA at 2.0V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.0V • Automatic power down to standby mode • TTL compatible three-state output driver Product Family Part Number N02M0818L2AN Package Type 32 - STSOP I Operating Temperature -20oC to +60oC Power Supply (Vcc) 1.3V - 2.3V Speed 100ns @ 1.65V 500ns @ 1.3V Standby Current (ISB) 450nA @ 2.3V Operating Current (Icc), Max 2.5 mA @ 1MHz N02M0818L2AD Known Good Die Pin Configuration Pin Descriptions Pin Name A0-A17 Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Ground A11 A9 A8 A13 WE CE2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 N02M0818L2A STSOP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 Vss I/O2 I/O1 I/O0 A0 A1 A2 A3 WE CE1, CE2 OE I/O0-I/O7 VCC VSS (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 NanoAmp Solutions, Inc. Functional Block Diagram N02M0818L2A VCCQ(opt) Address Inputs A0 - A3 Word Address Decode Logic Word Mux Address Inputs A4 - A17 Page Address Decode Logic 16K Page x 16 word x 8 bit RAM Input/ Output Mux and Buffers I/O0 - I/O7 CE1 CE2 WE OE Functional Description CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H Control Logic I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF VIN = 0V, f = 1 MHz, TA = 25oC 1. These parameters are verified in device characterization and are not 100% tested (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 NanoAmp Solutions, Inc. Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER N02M0818L2A Rating –0.3 to VCC+0.3 –0.3 to 3.0 500 –40 to 125 -20 to +60 240oC, 10sec(Lead only) Unit V V mW o C oC oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Recommended Operating Limits (Not all inclusive values tested)1 Item Core Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 µs Cycle Time2 Read/Write Operating Supply Current @ 85 ns Cycle Time2 Standby Current 3 Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 Test Conditions Chip Disabled (Note 3) Min. 1.3 1.0 Max 2.3 Unit V V V V V V µA µA mA mA 0.7VCCQ VCCQ+0.5 –0.5 IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 37oC, VCC = 2.3 V VCC = 1.0V, VIN = VCC or 0 Chip Disabled, tA= 85oC VCCQ–0.3 0.3 0.1 0.1 2.5 13.0 0.3VCCQ ISB1 450 nA Data Retention Current3 IDR 1.0 µA 1. These limits are the expected operating conditions for this device. Only selected points within this range of conditions are specifically tested and guaranteed. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. The chip is Disabled when CE1# is high or CE2 is low or UB# and LB# are high. The chip is Enabled when CE1# is low and CE2 is high. (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 3 NanoAmp Solutions, Inc. N02M0818L2A Recommended Timing Limits - Read Cycle (Not all inclusive values tested) 1.3 - 2.3 V Item Symbol Min. Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH 100 50 0 0 50 150 150 500 500 500 200 20 10 0 0 10 30 30 Max. Min. 100 100 100 50 Max. ns ns ns ns ns ns ns ns ns 1.65 - 2.3 V Units Recommended Timing Limits - Write Cycle (Not all inclusive values tested) 1.3 - 2.3 V Item Symbol Min. Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Output Hold from Address Change tWC tCW tAW tWP tAS tWR tWHZ tDW tDH tOW tOH 300 0 50 0 500 400 400 300 0 0 50 40 0 10 0 Max. Min. 85 50 50 40 0 0 15 Max. ns ns ns ns ns ns ns ns ns ns ns 1.65 - 2.3 V Units (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 4 NanoAmp Solutions, Inc. N02M0818L2A tRC Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) Address tAA tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA tHZ CE1 tCO CE2 tLZ tOE OE tOLZ Data Out High-Z Data Valid tOHZ (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 5 NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) tWC Address tAW CE1 tCW CE2 tAS WE tDW High-Z Data In tWHZ Data Out tWP N02M0818L2A tWR tDH Data Valid tOW High-Z Timing Waveform of Write Cycle (CE1 Control) tWC Address tAW CE1 (for CE2 Control, use inverted signal) tAS tCW tWR tWP WE tDW Data In tLZ Data Out tWHZ tDH Data Valid High-Z (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 6 NanoAmp Solutions, Inc. 32-Lead STSOP-I Package (N32) N02M0818L2A 11.80±0.10 0.50mm REF 8.0±0.10 0.27 0.17 13.40±0.20 SEE DETAIL B DETAIL B 1.10±0.15 0o-8o 0.20 0.00 0.80mm REF Note: 1. All dimensions in millimeters 2. Package dimensions exclude molding flash (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 7 NanoAmp Solutions, Inc. Ordering Information N02M0818L2A N02M0818L2AX-XX X Temperature 20°C to 60°C Performance 100 = 100ns @ 1.65V Package Type N = 32-pin STSOP I D = Known Good Die Revision History Revision # A B C Date Dec 2002 January 2004 July 2004 Change Description Initial Release Updated with power characteristics General Update © 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments. (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 8