UPA1871GR-9JG

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1871 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1871 is a switching device which can be driven directly by a 2.5-V power source. The µPA1871 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5° –3 FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 26.0 m Ω MAX. (VGS = 4.5 V, I D = 3.0 A) RDS(on)2 = 27.0 m Ω MAX. (VGS = 4.0 V, I D = 3.0 A) RDS(on)3 = 38.0 m Ω MAX. (VGS = 2.5 V, I D = 3.0 A) • Built-in G-S protection diode against ESD 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 µ PA1871GR-9JG 0.8 MAX. 0.10 M 0.1 ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT 30 ±12 ±6.0 ±80 2.0 150 V V A A W °C °C Gate1 Gate Protection Diode Source1 Drain1 Drain2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode Gate2 Gate Protection Diode Source2 Body Diode Total Power Dissipation Channel Temperature Storage Temperature –55 to +150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 50 cm x 1.1 m m Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14887EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 2000 µPA1871 ELECTRICAL CHARACTERISTICS (T A = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 4.0 V ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A / µs TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 3.0 A VGS(on) = 4.0 V RG = 10 Ω 0.5 5 15.0 16.0 21.0 20.5 21.5 27.8 930 220 105 55 180 260 230 9 2 4 0.80 180 120 26.0 27.0 38.0 1.0 MIN. TYP. MAX. 10 ±10 1.5 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL PG. RG VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS Wave Form VGS VGS Wave Form 0 10% VGS(on) 90% D.U.T. IG = 2 mA 50 Ω RL VDD 90% 90% PG. ID 0 10% 10% td(on) ton tr td(off) toff tf 2 Data Sheet G14887EJ2V0DS µPA1871 TYPICAL CHARACTERISTICS (T A = 25°C) 5 100 RV (@ DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 FORWARD BIAS SAFE OPERATING AREA d ite V) Lim .5 ID(pulse) 4 = PW n) (o DS GS 1m s 10 ms =1 0µ s dT - Derating Factor - % ID - Drain Current - A 10 ID(DC) DC 60 10 0m s 1 40 20 0.1 Single Pulse PD (FET1) : PD (FET2) = 1 : 1 0 0 30 60 120 90 TA - Ambient Temperature - ˚C 150 0.01 0.1 1.0 10.0 100.0 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 FORWARD TRANSFER CHARACTERISTICS 100 10 ID - Drain Current - A VDS = 10 V 20 VGS = 4.5 V ID - Drain Current - A 1 0.1 0.01 0.001 0.0001 TA = 125˚C 75˚C 25˚C −25˚C 15 VGS = 4.0 V 10 5 VGS = 2.5 V 0 0 0.1 0.2 0.3 0.4 0.5 0.00001 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100000 VDS = 10 V 1.5 VDS = 10 V ID = 1mA VGS(off) - Gate Cut-off Voltage - V 10000 1 1000 TA = −25˚C 25˚C 75˚C 125˚C 0.100 0.5 −50 0 50 100 150 0.010 0.01 0.1 1 10 100 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G14887EJ2V0DS 3 µPA1871 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 VGS = 2.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 VGS = 4.0 V 40 TA = 125˚C 30 TA = 125˚C 75˚C 25˚C 75˚C 30 25˚C −25˚C 20 −25˚C 20 0.01 0.1 1 10 100 10 0.01 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 VGS = 4.5 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 ID = 3.0 A 40 VGS = 2.5 V 30 4.0 V 20 4.5 V 30 TA = 125˚C 75˚C 25˚C −25˚C 20 10 0.01 0.1 1 10 100 10 −50 0 50 100 150 ID - Drain Current - A RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 f = 1 MHz 40 Ciss, Coss, Crss - Capacitance - pF ID = 3.0 A 1000 Ciss 30 20 100 Coss Crss 10 0 0 2 4 6 8 10 12 10 0.1 1 10 100 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 4 Data Sheet G14887EJ2V0DS µPA1871 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 tr tf td(off) VGS = 0V IF - Source to Drain Current - A 10 10 100 td(on) 1 0.1 10 0.1 VDD = 10 V VGS(on) = 4 V RG = 10 Ω 1 ID - Drain Current - A 0.01 0.4 0.6 0.8 1 1.2 VF(S-D) - Body Diode Forward Voltage - V DYNAMIC INPUT CHARACTERISTICS 6 VGS - Gate to Source Voltage - V ID = 6.0 A 5 4 3 2 1 0 0 VDD = 24 V 15 V 10 V 1 2 3 4 5 6 7 8 9 10 Qg - Gate Charge - nC 5 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - ˚C/W 100 62.5 ˚C/W 10 1 Single Pulse Mounted on Ceramic Board of 50 cm 2 x 1.1 mm PD(FET1) : PD(FET2) = 1 : 1 0.1 1m 10 m 100 m 1 10 PW - Pulse Width - s 100 1000 Data Sheet G14887EJ2V0DS 5 µPA1871 [MEMO] 6 Data Sheet G14887EJ2V0DS µPA1871 [MEMO] Data Sheet G14887EJ2V0DS 7 µPA1871 • The information in this document is current as of April, 2001. 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