0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
UPG2009TB_1

UPG2009TB_1

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    UPG2009TB_1 - L-BAND HIGH POWER SPDT SWITCH - NEC

  • 数据手册
  • 价格&库存
UPG2009TB_1 数据手册
DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage. FEATURES • Low insertion loss • High isolation • High power : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz • 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • L-band digital cellular or cordless telephone • BuletoothTM, W-LAN and WLL applications ORDERING INFORMATION Part Number Package 6-pin super minimold Marking G2U Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel µPG2009TB-E3 Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2009TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10191EJ02V0DS (2nd edition) Date Published July 2004 CP(K) Printed in Japan The mark shows major revised points.  NEC Compound Semiconductor Devices, Ltd. 2002, 2004 µPG2009TB PIN CONNECTIONS Pin No. Pin Name OUT1 GND OUT2 Vcont2 IN Vcont1 (Top View) (Bottom View) 1 G2U 3 2 1 4 5 6 4 5 6 3 2 1 2 3 4 5 6 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Control Voltage 1, 2 Input Power Total Power Dissipation Operating Ambient Temperature Storage Temperature Symbol Vcont1, 2 Pin Ptot TA Tstg Ratings −6.0 to +6.0 +36 0.15 −45 to +85 −55 to +150 Note Unit V dBm W °C °C Note Vcont1-Vcont2 ≤ 6.0 V RECOMMENDED OPERATING RENGE (TA = +25°C) Parameter Control Voltage (High) Control Voltage (Low) Symbol Vcont(H) Vcont(L) MIN. +2.7 −0.2 TYP. +2.8 0 MAX. +3.0 +0.2 Unit V V 2 Data Sheet PG10191EJ02V0DS µPG2009TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont1 = 2.8 V, Vcont2 = 0 V or Vcont1 = 0 V, Vcont2 = 2.8 V, ZO = 50 Ω, Off chip DC blocking capacitors value; 56 pF, unless otherwise specified) Parameter Insertion Loss Symbol LINS Test Conditions f = 0.5 to 1.0 GHz f = 2.0 GHz f = 2.5 GHz Isolation ISL f = 0.5 to 2.0 GHz f = 2.5 GHz Input Return Loss Output Return Loss Input Power at 0.1 dB Compression Point 2nd Harmonics Note MIN. − − − 24 − 15 15 32.5 TYP. 0.25 0.30 0.40 28 25 20 20 34 MAX. 0.45 0.50 − − − − − − Unit dB dB dB dB dB dB dB dBm RLin RLout Pin(0.1 dB) f = 0.5 to 2.5 GHz f = 0.5 to 2.5 GHz f = 1.0 GHz, Vcont = 2.8 V/0 V 2f0 f = 1.0 GHz, Vcont = 2.8 V/0 V, Pin = 30.5 dBm 65 75 − dBc 3rd Harmonics 3f0 f = 1.0 GHz, Vcont = 2.8 V/0 V, Pin = 30.5 dBm 65 75 − dBc Switching Speed Control Current tSW Icont Vcont = 2.8 V/0 V, RF Non − − 150 1 − 50 ns µA Note Pin(0.1 dB) are measured the input power level when the insertion loss increase more 0.1 than that of linear range. All other characteristics are measured in linear range. Caution When the µPG2009TB is used it is necessary to use DC blocking capacitors for No.1 (OUT1), No.3 (OUT2) and No.5 (IN). The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC blocking capacitor value is less than 100 pF. Data Sheet PG10191EJ02V0DS 3 µPG2009TB EVALUATION CIRCUIT Vcont1 = 2.8 V, Vcont2 = 0 V or Vcont2 = 0 V, Vcont1 = 2.8 V, off chip DC blocking capacitors value C1 = 56 pF, C2 = 1 000 pF (Bypass), using NEC standard evaluation board. C2 C1 G2U Vcont1 6 1 OUT1 IN C1 Vcont2 C2 5 2 4 3 C1 OUT2 EVALUATION BOARD Vcont1 6pin SMM SPDT SW OUT1 C2 C1 G2U IN C1 C1 C2 OUT2 NEC Vcont2 TRUTH TABLE Vcont1 Low High Vcont2 High Low IN−OUT1 OFF ON IN−OUT2 ON OFF 4 Data Sheet PG10191EJ02V0DS µPG2009TB TYPICAL CHARACTERISTICS (TA = +25°C, Vcont1/2 = 2.8 V/0 V, Pin = 0 dBm, OUT2 side is 50 Ω termination, unless otherwise specified) INPUT RETURN LOSS vs. FREQUENCY CH1 S11 log MAG 10 dB/ REF 0 dB 1: –25.43 dB 1.0 GHz 2: –30.339 dB 1.5 GHz 3: –30.025 dB 2.0 GHz 4: –23.812 dB 2.5 GHz 5: –17.85 dB 3.0 GHz CH1 S21 ISOLATION vs. FEQUENCY log MAG 10 dB/ REF 0 dB 1: –28.787 dB 1.0 GHz 2: –28.871 dB 1.5 GHz 3: –27.75 dB 2.0 GHz 4: –24.902 dB 2.5 GHz 5: –21.582 dB 3.0 GHz Input Return Loss RLin (dB) Isolation ISL (dB) 0 1 0 –20 –20 5 4 –40 2 START 0.500 000 000 GHz 1 2 3 4 5 3 STOP 3.000 000 000 GHz –40 START 0.500 000 000 GHz STOP 3.000 000 000 GHz Frequency f (GHz) Frequency f (GHz) INSERTION LOSS vs. FREQUENCY CH1 S21 log MAG 1 dB/ REF 0 dB 1: –0.620 dB 1.0 GHz 2: –0.744 dB 1.5 GHz 3: –0.881 dB 2.0 GHz 4: –1.057 dB 2.5 GHz 5: –1.302 dB 3.0 GHz OUTPUT RETERN LOSS vs. FREQUENCY CH1 S22 log MAG 10 dB/ REF 0 dB 1: –25.992 dB 1.0 GHz 2: –31.882 dB 1.5 GHz 3: –32.46 dB 2.0 GHz 4: –25.087 dB 2.5 GHz 5: –18.145 dB 3.0 GHz 0 1 2 3 Output Return Loss RLout (dB) Insertion Loss LINS (dB) 0 –2.0 4 5 –20 1 5 4 2 START 0.500 000 000 GHz –4.0 START 0.500 000 000 GHz STOP 3.000 000 000 GHz –40 3 STOP 3.000 000 000 GHz Frequency f (GHz) Frequency f (GHz) Caution These characteristics values include the losses of the NEC evaluation board. Remark The graphs indicate nominal characteristics. Data Sheet PG10191EJ02V0DS 5 µPG2009TB TYPICAL CHARACTERISTICS (f = 2 GHz, OUT2 side is 50 Ω termination, unless otherwise specified) RELATION BETWEEN CONTROL VOLTAGE OF INSERSION LOSS 0 0.1 Insersion Loss LINS (dB) 0.2 0.3 0.4 0.5 0.6 0.7 Vcont = 2.4 V Vcont = 2.8 V Vcont = 3.2 V 0.9 25 26 27 28 29 30 31 32 33 34 35 36 37 0.8 Input Power Pin (dBm) RELATION BETWEEN CONTROL VOLTAGE OF 2nd HARMONICS 0 10 Vcont = 2.4 V Vcont = 2.8 V Vcont = 3.2 V 0 10 RELATION BETWEEN CONTROL VOLTAGE OF 3rd HARMONICS Vcont = 2.4 V Vcont = 2.8 V Vcont = 3.2 V 2nd Harmonics 2f0 (dBc) 20 30 40 50 60 70 80 3rd Harmonics 3f0 (dBc) 20 30 40 50 60 70 80 90 25 26 27 28 29 30 31 32 33 34 35 36 37 Input Power Pin (dBm) 90 25 26 27 28 29 30 31 32 33 34 35 36 37 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10191EJ02V0DS µPG2009TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 Data Sheet PG10191EJ02V0DS 7 µPG2009TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 VP215 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10191EJ02V0DS µPG2009TB Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of July, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PG10191EJ02V0DS 9 µPG2009TB SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406
UPG2009TB_1 价格&库存

很抱歉,暂时无法提供与“UPG2009TB_1”相匹配的价格&库存,您可以联系我们找货

免费人工找货