LM3403

LM3303 LM3403 Quad Operational Amplifiers February 1995 LM3303 LM3403 Quad Operational Amplifiers General Description The LM3303 and LM3403 are monolithic quad operational amplifiers consisting of four independent high gain internally frequency compensated operational amplifiers designed to operate from a single power supply or dual power supplies over a wide range of voltages The common mode input range includes the negative supply thereby eliminating the necessity for external biasing components in many applications Y Y Y Y Y Y Four internally compensated operational amplifiers in a single package Wide power supply range single supply of 3 0V to 36V dual supply of g 1 5V to g 18V Class AB output stage for minimal crossover distortion Short circuit protected outputs High open loop gain 200k LM741 operational amplifier type performance Features Y Y Applications Y Y Input common mode voltage range includes ground or negative supply Output voltage can swing to ground or negative supply Filters Voltage controlled oscillators Connection Diagram 14-Lead DIP and SO-14 Package Order Information Device Code LM3303J LM3303N LM3303M LM3403J LM3403N LM3403M Package Code J14A N14A M14A J14A N14A M14A Package Description Ceramic DIP Molded DIP Molded Surface Mount Ceramic DIP Molded DIP Molded Surface Mount TL H 10064 – 1 Top View Equivalent Circuit ( of Circuit) TL H 10064 – 2 C1995 National Semiconductor Corporation TL H 10064 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Storage Temperature Range Ceramic DIP Molded DIP and SO-14 Operating Temperature Range Industrial (LM3303) Commercial (LM3403) Lead Temperature Ceramic DIP (Soldering 60 sec ) Molded DIP and SO-14 (Soldering 10 sec ) b 65 C to a 175 C b 65 C to a 150 C b 40 C to a 85 C 0 C to a 70 C Internal Power Dissipation (Notes 1 2) 14L-Ceramic DIP 14L-Molded DIP SO-14 Supply Voltage between V a and Vb Differential Input Voltage (Note 3) Input Voltage ESD Tolerance 1 36W 1 04W 0 93W 36V g 30V (Vb) b 0 3V to V a (To Be Determined) 300 C 265 C LM3303 and LM3403 Electrical Characteristics TA e 25 C Symbol VIO IIO IIB ZI ICC CMR VIR PSRR IOS AVS VOP Parameter Input Offset Voltage Input Offset Current Input Bias Current Input Impedance Supply Current Common Mode Rejection Input Voltage Range Power Supply Rejection Ratio Output Short Circuit Current (Per Amplifier) (Note 4) Large Signal Voltage Gain Output Voltage Swing VCC e g 15V unless otherwise specified LM3303 Min Typ 20 30 200 03 10 28 70 a 12V to Vb Conditions LM3403 Max 80 75 500 03 70 70 a 13V to Vb Units Max 80 50 500 mV nA nA MX 70 mA dB V 150 g 45 Min Typ 20 30 200 10 28 90 a 13 5V to Vb VO e 0V RL e % RS s 10 kX 90 a 12 5V to Vb 30 g 10 g 30 150 g 45 g 10 30 g 30 mV V mA V mV V VO e g 10V RL t 2 0 k X RL e 10 kX RL e 2 0 kX 20 g 12 g 10 200 12 5 12 03 50 10 06 20 g 12 g 10 200 a 13 5 g 13 TR Transient Response Rise Time Fall Time Overshoot VO e 50 mV AV e 1 0 RL e 10 kX VO e 50 mV AV e 1 0 RL e 10 kX VO e 50 mV AV e 1 0 RL e 10 kX VI e b10V to a 10V AV e 1 0 03 50 10 06 ms % MHz V ms BW SR Bandwidth Slew Rate 2 LM3303 and LM3403 (Continued) Electrical Characteristics TA e 25 C VCC e g 15V unless otherwise specified The following specifications apply for b40 C s TA s a 85 C for the LM3303 and 0 C s TA s a 70 C for the LM3403 Symbol VIO DVIO DT IIO DIIO DT IIB AVS VOP Parameter Input Offset Voltage Input Offset Voltage Temperature Sensitivity Input Offset Current Input Offset Current Temperature Sensitivity Input Bias Current Large Signal Voltage Gain Output Voltage Swing VO e g 10V RL t 2 0 kX RL e 2 0 kX 15 g 10 Conditions Min LM3303 Typ Max 10 10 250 50 1000 15 g 10 LM3403 Min Typ Max 10 10 200 50 800 Units mV mV C nA pA C nA V mV V LM3303 and LM3403 Electrical Characteristics TA e 25 C Symbol VIO IIO IIB ICC PSRR AVS VOP Parameter Input Offset Voltage Input Offset Current Input Bias Current Supply Current Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Swing (Note 5) V a e 5 0V Vb e GND unless otherwise specified LM3303 Min Typ Max 80 75 500 25 70 150 Min LM3403 Typ 20 30 200 25 Max 80 50 500 70 150 20 33 (V a ) b2 0 b 120 b 120 Conditions Units mV nA nA mA mV V V mV V RL t 2 0 kX RL e 10 kX 5 0V s V a s 30V RL e 10 kX 1 0 Hz s f s 20 kHz (Input Referenced) 20 33 (V a ) b2 0 200 200 CS Channel Separation dB Note 1 TJ Max e 150 C for the Molded DIP and SO-14 and 175 C for the Ceramic DIP Note 2 Ratings apply to ambient temperature at 25 C Above this temperature derate the 14L-Ceramic DIP at 9 1 mW C the 14L-Molded DIP at 8 3 mW C and the SO-14 at 7 5 mW C Note 3 For supply voltage less than 30V between V a and V b the absolute maximum input voltage is equal to the supply voltage Note 4 Not to exceed maximum package power dissipation Note 5 Output will swing to ground 3 Typical Performance Characteristics Open Loop Frequency Response Sine Wave Response Output Voltage vs Frequency Output Swing vs Supply Voltage Input Bias Current vs Temperature Input Bias Current vs Supply Voltage TL H 10064 – 3 4 Typical Applications Multiple Feedback Bandpass Filter Comparator with Hysteresis TL H 10064 – 6 VIL e TL H 10064 – 4 R1 R1 a R2 (VOL b VREF) a VREF fo e center frequency BW e Bandwidth R in kX C in mF Qe fo k 10 BW VIH e He R1 (VOH b VREF) a VREF R1 a R2 R1 (VOH b VOL) R1 a R2 High Impedance Differential Amplifier Q C1 e C2 e 3 R1 e R2 e 1 R3 e 9Q2 b 1 If source impedance is high or varies filter may be preceded with voltage follower buffer to stabilize filter parameters Design example given Q e 5 fo e 1 kHz Let R1 e R2 e 10 kX then R3 e 9(5)2 b 10 R3 e 215 kX Ce 5 e 1 6 nF 3 ( Using scaling factors in these expressions Wein Bridge Oscillator TL H 10064 – 7 VOUT e C(1 a a a b)(V2 b V1) R2 R5 A R6 for best CMRR R7 R1 e R4 R2 e R5 Gain e R6 R5 1 a 2R1 R3 J e C (1 a a a b) AC Coupled Non-Inverting Amplifier TL H 10064 – 5 fo e 1 for fo e 1 kHz 2qRC R e 16 kX C e 0 01 mF TL H 10064 – 9 AV e 1 a R2 R1 AV e 11 (as shown) 5 Typical Applications (Continued) AC Coupled Inverting Amplifier Voltage Reference TL H 10064 – 10 VO e VO e TL H 10064–8 R1 R1 a R2 1 Va 2  e Va as shown 2 J AV e Rf R1 AV e 10 (as shown) Ground Referencing a Differential Input Signal Pulse Generator TL H 10064–11 TL H 10064 – 14 Voltage Controlled Oscillator TL H 10064 – 12 Note 1 Wide Control Voltage Range 0V s VCO s 2 (V g 1 5V) 6 Typical Applications (Continued) Function Generator TL H 10064 – 13 Note 2 f e R1 a R2 R2R1 if R3 e 4CRfR1 R2 a R1 Bi-Quad Filter TL H 10064 – 15 Qe BW fo Example fo e 1000 Hz BW e 100 Hz TBP e 1 TN e 1 R e 160 kX R1 e 1 6 MX R2 e 1 6 MX R3 e 1 6 MX C e 0 001 mF where TBP e Center Frequency Gain TN e Bandpass Notch Gain fo e 1 1 VREF e VCC 2qRC 2 R1 e QR R2 e R1 TBP R3 e TNR2 C1 e 10 C 7 8 Physical Dimensions inches (millimeters) 14-Lead Ceramic Dual-In-Line Package (J) Order Number LM3303J or LM3403J NS Package Number J14A 14-Lead Molded Surface Mount (M) Order Number LM3403M NS Package Number M14A 9 LM3303 LM3403 Quad Operational Amplifiers Physical Dimensions inches (millimeters) (Continued) 14-Lead Molded Dual-In-Line Package (N) Order Number LM3303N or LM3403N NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications