2N3055

2N3055 Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package Description: The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W Note 1. Maximum Ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Electrical Characteristics: (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2 60 − − V Collector−Emitter Sustaining Voltage VCER(sus) IC = 200mA, RBE = 100, Note 2 70 − − V Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 30V, IB = 0 − − 0.7 mA ICEX VCE = 100V, VBE(off) = 1.5V − − 1.0 mA VCE = 100V, VBE(off) = 1.5V, TC = +150C − − 5.0 mA VBE = 7V, IC = 0 − − 5.0 mA IEBO Note 2. Pulse Test: Pulse Width  300s. Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 4A, VCE = 4V 20 − 70 IC = 10A, VCE = 4V 5 − − IC = 4A, IB = 400mA − − 1.1 V IC = 10A, IB = 3.3A − − 3.0 V IC = 4A, VCE = 4V − − 1.5 V ON Characteristics (Note 2) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter ON Voltage VBE(on) Second Breakdown Second Breakdown Collector Current with Base Forward Biased Is/b VCE = 40V, t = 1.0s; Nonrepetitive 2.87 − − A Current Gain−Bandwidth Product fT IC = 500mA, VCE = 10V, f = 1MHz 2.5 − − MHz Small−Signal Current Gain hfe IC = 1A, VCE = 4V, f = 1kHz 15 − 120 Small−Signal Current Gain Cutoff Frequency fhfe VCE = 4V, IC = 1A, f = 1kHz 10 − − Dynamic Characteristics Note 2. Pulse Test: Pulse Width  300s. Duty Cycle  2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case kHz