2N6107

2N6107 Silicon PNP Transistor Audio Power Output and Medium Power Switching TO−220 Type Package Description: The 2N6107 is a silicon PNP transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current−Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 70 − − V Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 60V, IB = 0 − − 1.0 mA ICEX VCE = 80V, VEB(off) = 1.5V − − 100 A VCE = 80V, VEB(off) = 1.5V, TC = +150C − − 2.0 mA VBE = 5V, IC = 0 − − 1.0 mA IEBO Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE IC = 2A, VCE = 4V 30 − 150 IC = 7A, VCE = 4V 2.3 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 7A, IB = 3A − − 3.5 V Base−Emitter ON Voltage VBE(on) IC = 7A, VCE = 4V − − 3.0 V IC = 500mA, VCE = 4V, ftest = 1MHz, Note 2 10 − − MHz pF Dynamic Characteristics Current−Gain Bandwidth Product fT Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 250 Small−Signal Current Gain hfe IC = 500mA, VCE = 4V, f = 50kHz 20 − − Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab