BFG10X_95

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION BFG10; BFG10/X BFG10 (see Fig.1) 1 2 3 4 collector base emitter emitter handbook, 2 columns 4 3 1 Top view 2 MSB014 BFG10/X (see Fig.1) 1 2 3 4 MARKING TYPE NUMBER BFG10 BFG10/X CODE N70 N71 collector emitter base emitter Fig.1 SOT143. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 8 f (GHz) 1.9 VCE (V) 3.6 PL (mW) 200 Gp (dB) ≥5 ηc (%) ≥50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature up to Ts = 60 °C; see Fig.2; note 1 open base open collector CONDITIONS open emitter − − − − − − −65 − MIN. 8 2.5 250 250 400 +150 175 MAX. 20 V V V mA mA mW °C °C UNIT 1995 Aug 31 2 Philips Semiconductors Product specification NPN 2 GHz RF power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 0.1 mA open base; IC = 5 mA open collector; IE = 0.1 mA VCE = 5 V; VBE = 0 IC = 50 mA; VCE = 5 V IE = ie = 0; VCB = 3.6 V; f = 1 MHz IC = 0; VCE = 3.6 V; f = 1 MHz PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 60 °C; note 1; Ptot = 400 mW BFG10; BFG10/X VALUE 290 UNIT K/W MIN. 20 8 2.5 − 25 − − MAX. − − − 100 − 3 2 UNIT V V V µA pF pF handbook, halfpage 500 MLC818 P tot (mW) handbook, halfpage 2.0 MLC819 Cc (pF) 1.5 400 300 1.0 200 0.5 100 0 0 50 100 150 Ts ( C) o 0 200 0 2 4 6 8 10 V CB (V) IC = 0; f = 1 MHz. Fig.3 Fig.2 Power derating curve Collector capacitance as a function of collector-base voltage; typical values. 1995 Aug 31 3 Philips Semiconductors Product specification NPN 2 GHz RF power transistor APPLICATION INFORMATION RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 8 f (GHz) 1.9 VCE (V) 3.6 ICQ (mA) 1 PL (mW) 200 BFG10; BFG10/X Gp (dB) >5 typ. 7 ηc (%) >50 typ. 60 Ruggedness in class-AB operation The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8. MLC820 MLC821 handbook, halfpage 10 Gp (dB) 8 ηc 100 ηc (%) 80 handbook, halfpage 500 PL (mW) 400 6 Gp 60 300 4 40 200 2 20 100 0 0 100 200 300 0 400 500 P L (mW) 0 0 50 100 PD (mW) 150 Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. Fig.4 Power gain and efficiency as functions of load power; typical values. Fig.5 Load power as a function of drive power; typical values. 1995 Aug 31 4 Philips Semiconductors Product specification NPN 2 GHz RF power transistor SPICE parameters for the BFG10 crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34(1) 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. 1995 Aug 31 5 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 2.714 102.8 0.998 28.12 6.009 403.2 2.937 31.01 0.999 2.889 0.284 1.487 1.100 3.500 1.000 3.500 0.217 0.196 0.000 1.110 3.000 5.125 0.600 0.367 12.07 99.40 7.220 3.950 0.000 2.327 0.668 0.398 0.160 0.000 0.000 750.0 0.000 0.652 − − V A pA − − − V A fA − Ω µA Ω Ω Ω − eV − pF V − ps − V A deg pF V − − ns F mV − − Cbe Ccb Cce L1 L2 L3 LB LE C be L1 B LB B' BFG10; BFG10/X UNIT fA handbook, halfpage C cb L2 C' E' LE MBC964 C Cce L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 100 MHz. Fig.6 Package equivalent circuit SOT143. List of components (see Fig.6) DESIGNATION 84 17 191 0.12 0.21 0.06 0.95 0.40 VALUE fF fF fF nH nH nH nH nH UNIT Philips Semiconductors Product specification NPN 2 GHz RF power transistor Test circuit information BFG10; BFG10/X handbook, full pagewidth V bias R2 VS R1 T1 C14, C15, C16 50 Ω input C1 ,,, , , ,,,, L10 L9 L8 L1 C11 C10 L2 DUT C2, C3, C4, C5 ,, ,, ,, ,, ,, ,,,, C12 L7 L6 L4 L3 L5 C6, C7, C8 C13 50 Ω output C9 MLC822 Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz. 1995 Aug 31 6 Philips Semiconductors Product specification NPN 2 GHz RF power transistor List of components used in test circuit (see Fig.7) COMPONENT C1, C9, C10, C11 C2, C3, C4, C5, C6, C7 C8 C12, C13 C14, C15, C16 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 T1 R1 R2 Notes DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 micro choke BD228 metal film resistor metal film resistor 20 Ω; 0.4 W 530 Ω; 0.4 W VALUE 24 pF 0.86 pF 1.1 pF 470 µF; 10 V 10 nF BFG10; BFG10/X DIMENSIONS CATALOGUE No. 2222 031 34471 length 28.5 mm width 0.93 mm length 2.3 mm width 0.93 mm length 3.1 mm width 0.93 mm length 3.3 mm width 0.93 mm length 16.3 mm width 0.93 mm length 10 mm width 0.93 mm length 4.4 mm width 0.4 mm length 19.3 mm width 0.93 mm length 19.7 mm width 0.4 mm 2322 157 10209 2322 157 15301 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6). 1995 Aug 31 7 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X handbook, full pagewidth 60 Base 70 V bias Collector R2 T1 R1 L10 C12 L9 C14 C15 VS C16 L8 C3 C4 L7 C10 C5 L6 C6 C2 C1 L1 Base L2 L3 L5 L4 C7 C8 Collector C9 C13 C11 MLC823 Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7. 1995 Aug 31 8 Philips Semiconductors Product specification NPN 2 GHz RF power transistor PACKAGE OUTLINE BFG10; BFG10/X handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.9 SOT143. 1995 Aug 31 9 Philips Semiconductors Product specification NPN 2 GHz RF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFG10; BFG10/X This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Aug 31 10