BLF6G21-10G

BLF6G21-10G Power LDMOS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] f (MHz) 2110 to 2170 2110 to 2170 VDS (V) 28 28 PL(AV) (W) 0.7 2 Gp (dB) 18.5 19.3 ηD (%) 15 31 ACPR (dBc) −50[1] −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 0.7 W N Gain = 18.5 dB N Efficiency = 15 % N ACPR = −50 dBc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 2 W N Gain = 19.3 dB N Efficiency = 31 % N ACPR = −39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency NXP Semiconductors BLF6G21-10G Power LDMOS transistor I Excellent thermal stability I No internal matching for broadband operation I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multi carrier applications in the HF to 2200 MHz frequency range I Broadcast drivers 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 Graphic symbol 1 3 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G21-10G Description ceramic surface-mounted package; 2 leads Version SOT538A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 +150 225 Unit V V °C °C BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 2 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Conditions [1] Symbol Parameter Typ 3.2 Unit K/W Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL(AV) = 11 W [1] Thermal resistance is determined under specified RF operating conditions 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 18 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 0.9 A VGS = VGS(th) + 3.75 V; ID = 0.625 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 Typ 1.9 3.1 0.5 0.4 0.5 Max 2.4 1.5 150 Unit V V µA A nA S Ω pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp ηD ACPR Parameter power gain drain efficiency adjacent channel power ratio Conditions PL(AV) = 0.7 W PL(AV) = 0.7 W PL(AV) = 0.7 W Min Typ 18.5 15 −50 Max Unit dB % dBc Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp ηD ACPR Parameter power gain drain efficiency adjacent channel power ratio Conditions PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W Min 17.3 29 Typ 19.3 31 −39 Max −36 Unit dB % dBc 7.1 Ruggedness in class-AB operation The BLF6G21-10G is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 2140 MHz at PL = 10 W. BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 3 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 7.2 CW 50 RLin (dB) 40 (1) 001aal120 30 20 (2) 10 (3) 0 0 4 8 12 PL (W) 16 VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 1. CW input return loss as a function of load power; typical values 19.5 Gp (dB) 18.5 001aal121 80 ηD (%) 60 001aal122 (1) (2) (3) 40 17.5 (1) (2) (3) 20 16.5 0 4 8 12 PL (W) 16 0 0 4 8 12 PL (W) 16 VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 2. CW power gain as a function of load power; typical values Fig 3. CW drain efficiency as a function of load power; typical values BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 4 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 7.3 1-carrier W-CDMA 50 RLin (dB) 40 (1) 001aal123 30 20 (2) (3) 10 0 0 1 2 3 PL (W) 4 VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 4. 1-carrier W-CDMA input return loss as a function of load power; typical values 20.0 Gp (dB) 19.6 001aal124 50 ηD (%) 40 001aal125 19.2 30 (1) (2) (3) 18.8 (1) (2) (3) 20 18.4 10 18.0 0 1 2 3 PL (W) 4 0 0 1 2 3 PL (W) 4 VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 5. 1-carrier W-CDMA power gain as a function of load power; typical values Fig 6. 1-carrier W-CDMA drain efficiency as a function of load power; typical values BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 5 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor −30 ACPR (dBc) −40 (3) (2) (1) 001aal126 −52 ACPR (dBc) −56 001aal127 −50 −60 (3) (2) (1) −60 0 1 2 3 PL (W) 4 −64 0 1 2 3 PL (W) 4 VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 7. 1-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values Fig 8. 1-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values 7.4 2-carrier W-CDMA 40 RLin (dB) 30 (1) 001aal128 20 (2) (3) 10 0 0 0.6 1.2 PL (W) 1.8 VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 9. 2-carrier W-CDMA input return loss as a function of load power; typical values BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 6 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 20.0 Gp (dB) 19.6 001aal129 30 ηD (%) 20 001aal130 19.2 (1) (2) (3) 18.8 10 (1) (2) (3) 18.4 18.0 0 0.6 1.2 PL (W) 1.8 0 0 0.6 1.2 PL (W) 1.8 VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 10. 2-carrier W-CDMA power gain as a function of load power; typical values Fig 11. 2-carrier W-CDMA drain efficiency as a function of load power; typical values −30 ACPR (dBc) −40 001aal131 −40 ACPR (dBc) −45 001aal132 (3) (2) (1) −50 (3) (2) (1) −50 −55 −60 0 0.6 1.2 PL (W) 1.8 −60 0 0.6 1.2 PL (W) 1.8 VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 12. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values Fig 13. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 7 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 8. Package outline Ceramic surface-mounted package; 2 leads SOT538A D A z2 (4×) D1 D2 3 z4 (4×) B c 1 A L z1 (4×) H E2 E1 E z3 (4×) 2 w1 M B M 0 2.5 scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.95 2.29 0.116 0.090 b 1.35 1.19 0.053 0.047 c 0.23 0.18 0.009 0.007 D 5.16 5.00 0.203 0.197 D1 4.65 4.50 0.183 0.177 D2 5.16 5.00 0.203 0.197 E 4.14 3.99 0.163 0.157 E1 3.63 3.48 0.143 0.137 E2 4.14 3.99 0.163 0.157 H 7.49 7.24 0.295 0.285 L 2.03 1.27 0.080 0.050 Q 0.10 0.00 w1 0.25 z1 0.58 0.43 z2 0.25 0.18 z3 0.97 0.81 0.038 0.032 z4 0.51 0.00 0.020 0.000 5 mm b α Q α 7° 0° 7° 0° 0.004 0.010 0.000 0.023 0.010 0.017 0.007 OUTLINE VERSION SOT538A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-08-20 06-03-16 Fig 14. Package outline SOT538A BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 8 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 9. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM HF LDMOS PAR PDPCH PHS RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Personal Handy-phone System Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access 10. Revision history Table 10. Revision history Release date 20091211 Data sheet status Product data sheet Change notice Supersedes BLF6G21-10G_1 Document ID BLF6G21-10G_2 Modifications: • • • • • • Section 6 on page 3: added some values. Table 7 on page 3: added some values. Section 7.1 on page 3: added some values. Section 7.2 on page 4: added CW powersweeps. Section 7.3 on page 5: added 1-carrier W-CDMA powersweeps. Section 7.4 on page 6: added 2-carrier W-CDMA powersweeps. Objective data sheet - BLF6G21-10G_1 20090511 BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 9 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 10 of 11 NXP Semiconductors BLF6G21-10G Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2009 Document identifier: BLF6G21-10G_2