MRF7S21110HSR3

Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 33 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.3 dB Drain Efficiency — 32.5% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point ≃ 110 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. 2110--2170 MHz, 33 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF7S21110HR3 CASE 465A--06, STYLE 1 NI--780S MRF7S21110HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 109 W CW Case Temperature 78°C, 33 W CW RθJC 0.37 0.41 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2007--2008, 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF7S21110HR3 MRF7S21110HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) 0.05 0.1 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 7.95 — pF Output Equivalent Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 613 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 232 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 33 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 16.5 17.3 19.5 dB Drain Efficiency ηD 31 32.5 39 % PAR 5.7 6.1 6.5 dB ACPR --48 --38 --35 dBc IRL — --15 — dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) MRF7S21110HR3 MRF7S21110HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 2110--2170 MHz Bandwidth Video Bandwidth @ 90 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz Software and Tools. • Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14 respectively after Fig. 13 removed) • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 14 MRF7S21110HR3 MRF7S21110HSR3 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007--2008, 2011. All rights reserved. MRF7S21110HR3 MRF7S21110HSR3 Document Number: RF Device Data MRF7S21110H Rev. 2, 3/2011 Freescale Semiconductor 15