PSMN025-80YLX

PSMN025-80YL N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits • • • • Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package 3. Applications • • • • • Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 80 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 37 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 95 W VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 22.2 27 mΩ ID = 10 A; VDS = 64 V; VGS = 5 V; - 5.8 - nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Tj = 25 °C; Fig. 13; Fig. 14 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package PSMN025-80YL Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PSMN025-80YL 025L80 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 80 V VDGR drain-gate voltage RGS = 20 kΩ - 80 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 95 W ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - 37 A VGS = 5 V; Tmb = 100 °C; Fig. 2 - 26.5 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 150 A -55 175 °C IDM peak drain current Tstg storage temperature PSMN025-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 2 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Tj junction temperature Min Max Unit -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 37 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 150 A - 45.4 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 37 A; Vsup ≤ 80 V; RGS = 50 Ω; [1][2] VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 ID (A) Pder (%) 003aaj005 40 30 80 20 40 10 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature PSMN025-80YL Product data sheet 0 200 Fig. 2. 0 30 90 120 150 Tmb (°C) 180 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 14 April 2016 60 © Nexperia B.V. 2017. All rights reserved 3 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 ID (A) 003aaj007 103 Limit RDSon = VDS / ID 102 tp = 10 us 10 100 us DC 1 1 ms 10 ms 100 ms 10-1 10-2 Fig. 3. 1 102 10 VDS (V) 103 Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) 003aaj006 102 (1) 10 (2) 1 (3) 10-1 10-2 10-3 Fig. 4. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 1.58 K/W PSMN025-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 4 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 003aai733 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 P 0.05 0.02 δ= Fig. 5. T single shot tp 10-2 10-6 tp 10-5 10-4 10-3 10-2 10-1 t T tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 72 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 1.4 1.7 2.1 V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9 - - 2.45 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9 0.5 - - V VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.1 1 µA VDS = 80 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 16 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 22.2 27 mΩ VGS = 10 V; ID = 10 A; Tj = 25 °C; - 20.5 25 mΩ - - 67.8 mΩ - 17.1 - nC - 34.3 - nC Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 10 Fig. 11 VGS = 5 V; ID = 10 A; Tj = 175 °C; Fig. 12; Fig. 11 Dynamic characteristics QG(tot) total gate charge ID = 10 A; VDS = 64 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 ID = 10 A; VDS = 64 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 PSMN025-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 5 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit QGS gate-source charge ID = 10 A; VDS = 64 V; VGS = 5 V; - 5.2 - nC QGD gate-drain charge Tj = 25 °C; Fig. 13; Fig. 14 - 5.8 - nC Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 2032 2703 pF Coss output capacitance Tj = 25 °C; Fig. 15 - 147 176 pF Crss reverse transfer capacitance - 75 103 pF td(on) turn-on delay time VDS = 60 V; RL = 4.98 Ω; VGS = 5 V; - 11.6 - ns tr rise time RG(ext) = 5 Ω; Tj = 25 °C - 17.2 - ns td(off) turn-off delay time - 23.9 - ns tf fall time - 15.3 - ns IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.81 1.2 V Source-drain diode VSD source-drain voltage trr reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; - 23.8 - ns recovered charge VDS = 25 V; Tj = 25 °C - 27 - nC Qr ID (A) 003aaj009 80 003aaj010 100 10 V RDSon 4.5 V 80 3.5 V 60 VGS = 3 V 60 2.8 V 40 2.6 V 20 40 20 2.4 V 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS (V) 0 4 Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics; drain current as a function of drain-source voltage; typical values PSMN025-80YL Product data sheet 0 2 6 8 10 12 14 VGS (V) 16 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 14 April 2016 4 © Nexperia B.V. 2017. All rights reserved 6 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 ID (A) 003aaj012 75 003aah025 3 VGS(th) (V) 2.5 60 max 2 45 typ 1.5 30 min 1 15 0.5 175°C Tj = 25°C 0 Fig. 8. 0 0.5 1 1.5 2 2.5 3 3.5 VGS (V) 0 -60 4 Transfer characteristics; drain current as a function of gate-source voltage; typical values Fig. 9. 003aah026 10-1 60 120 Tj (° C) 003aaj015 RDSon 10-2 180 Gate-source threshold voltage as a function of junction temperature 100 ID (A) 2.6 V 2.8 V 80 min 10-3 typ max 60 10-4 40 10-5 20 10-6 0 0 1 2 V GS (V) 0 3 Fig. 10. Sub-threshold drain current as a function of gate-source voltage PSMN025-80YL Product data sheet 3V 4.5 V 3.5 V VGS = 10 V 0 5 10 15 20 25 30 35 ID (A) 40 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 7 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 003aag817 3 VDS a ID 2.4 VGS(pl) 1.8 VGS(th) VGS 1.2 QGS2 QGS1 0.6 0 -60 0 60 120 Tj (°C) QGS QGD QG(tot) 003aaa508 Fig. 13. Gate charge waveform definitions 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature VGS (V) 003aaj017 10 003aaj018 104 C (pF) Ciss 8 103 VGS = 14 V 6 64 V 4 Coss 102 Crss 2 0 0 5 10 15 20 25 30 35 QG (nC) Fig. 14. Gate-source voltage as a function of gate charge; typical values PSMN025-80YL Product data sheet 10 10-1 40 1 10 VDS (V) 102 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 8 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 003aaj019 150 IS (A) 125 100 75 50 25 175°C Tj = 25°C 0 0 0.25 0.5 0.75 1 1.25 VSD (V) 1.5 Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN025-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 9 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) PSMN025-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 10 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. PSMN025-80YL Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 11 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN025-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 12 / 13 PSMN025-80YL Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 14 April 2016 PSMN025-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 14 April 2016 © Nexperia B.V. 2017. All rights reserved 13 / 13