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2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088
2N5089
MMBT5088
MMBT5089
C
E
C
B
TO-92
SOT-23
E
B
Mark: 1Q / 1R
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
Value
Units
30
25
35
30
4.5
V
V
V
V
V
100
mA
-55 to +150
°C
2N5088
2N5089
2N5088
2N5089
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
Units
2N5088
2N5089
625
5.0
83.3
*MMBT5088
*MMBT5089
350
2.8
200
357
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5088/2N5089/MMBT5088/MMBT5089, Rev A
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
50
50
50
100
V
V
V
V
nA
nA
nA
nA
OFF CHARACTERISTICS
V(BR)CEO
IC = 1.0 mA, IB = 0
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 20 V, IE = 0
VCB = 15 V, IE = 0
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
IC = 100 µA, IE = 0
5088
5089
5088
5089
5088
5089
30
25
35
30
5088
5089
5088
5089
5088
5089
300
400
350
450
300
400
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 100 µA, VCE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
900
1200
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
0.5
V
VBE(on)
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
0.8
V
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
IC = 500 µA,VCE = 5.0 mA,
f = 20 MHz
VCB = 5.0 V, IE = 0, f = 100 kHz
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0, f = 100 kHz
hfe
Small-Signal Current Gain
NF
Noise Figure
IC = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 100 µA, VCE = 5.0 V,
RS = 10 kΩ,
f = 10 Hz to 15.7 kHz
5088
5089
5088
5089
50
350
450
MHz
4.0
pF
10
pF
1400
1800
3.0
2.0
dB
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
3
(continued)
V CE = 5.0 V
125 °C
1000
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
β = 10
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
1200
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
β = 10
0.2
125 °C
0.15
25 °C
0.1
- 40 °C
0.05
VBEON- BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
I C - COLLECTOR CURRENT (mA)
1
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
V CE = 5.0 V
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
10
VCB = 45V
1
0.1
25
100
Base-Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA)
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
50
75
100
125
T A - AMBIE NT TEMP ERATURE ( ° C)
150
40
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (f T )
V CE - COLLECTOR VOLTAGE (V)
5
CAPACITANCE (pF)
f = 1.0 MHz
4
3
C te
2
C ob
1
°
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
175 MHz
7
5
150 MHz
3
2
125 MHz
100 MHz
75 MHz
1
0.1
Normalized Collector-Cutoff Current
vs Ambient Temperature
1000
100
5
V CE = 5.0 V
100
10
1
25
50
75
100
125
T A - AMBIE NT TEMPERATURE ( °C)
4
BANDWIDTH = 15.7 kHz
I C = 30 µA
2
1
I C = 10 µA
0
150
1,000
P D - POWER DISSIPATION (mW)
I C = 1.0 mA,
R S = 500 Ω
I C = 1.0 mA,
R S = 5.0 kΩ
2
V CE = 5.0V
0
0.0001
0.01
0.1
1
f - FREQUENCY (MHz)
20,000
50,000
100,000
TO-92
500
10
100
SOT-23
375
250
125
0
0.001
10,000
625
I C = 100 µA,
R S = 10 kΩ
4
5,000
Power Dissipation vs
Ambient Temperature
I C = 200 µA,
R S = 10 kΩ
6
2,000
R S - SOURCE RESISTANCE (Ω )
10
8
3
I C = 100 µA
3
Noise Figure vs Frequency
NF - NOISE FIGURE (dB)
1
10
I C - COLLECTOR CURRENT (mA)
Wideband Noise Frequency
vs Source Resistance
NF - NOISE FIGURE (dB)
CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C
0
10
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
0
25
50
75
100
TEMPERATURE ( o C)
125
150
(continued)
Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
10,000
R S - SOURCE RESISTANCE ( Ω )
R S - SOURCE RESISTANCE ( Ω )
Contours of Constant
Narrow Band Noise Figure
3.0 dB
5,000
4.0 dB
2,000
6.0 dB
1,000
8.0 dB
500
V CE = 5.0 V
10 dB
f = 100 Hz
BANDWIDTH
= 20 Hz
200
12 dB
14 dB
100
1
10,000
5,000
2.0 dB
2,000
3.0 dB
1,000
4.0 dB
500
V CE = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
200
1
1,000
10000
1.0 dB
2.0 dB
3.0 dB
1000
4.0 dB
500
V CE = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
200
100
1
6.0 dB
10
100
I C - COLLECTOR CURRENT ( µ A)
10
100
I C- COLLECTOR CURRENT ( µ A)
1,000
Contours of Constant
Narrow Band Noise Figure
8.0 dB
1000
R S - SOURCE RESISTANCE (Ω )
R S - SOURCE RESISTANCE (Ω )
Contours of Constant
Narrow Band Noise Figure
2000
8.0 dB
100
10
100
I C - COLLECTOR CURRENT ( µ A)
5000
6.0 dB
10000
5000
2000
1000
2.0 dB
3.0 dB
VCE =
4.0 dB
5.0V
f = 1.0 MHz
200 BANDWIDTH
7.0 dB
= 200kHz
8.0 dB
100
0.01
0.1
1
I C - COLLECTOR CURRENT ( µ A)
500
5.0
dB
6.0
dB
10
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
h fe
1.3
h ie
h oe
1.2
h re
1.1
h oe
h re
1 h ie
0.9
0.8
I C = 1.0mA
f = 1.0kHz
T A = 25°C
h fe
0
5
10
15
20
V CE - COLLECTOR VOLTAGE (V)
25
Typical Common Emitter Characteristics
CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C)
1.4
1.5
1.4
1.3
1.2
h ie
VCE = 5.0V
f = 1.0kHz
I C = 1.0mA
h re
h fe
h oe
1.1
1
0.9
0.8
h oe
0.7
h fe
0.6
h re
0.5
-100
h ie
-50
0
50
100
T J - JUNCTIO N TEMP ERATURE (° C)
Typical Common Emitter Characteristics
CHARACTERISTICS RELATIVE TO VALUE(I C =1mA)
CHAR ACTER ISTI CS RELATI VE TO VALUE(VCE =5V)
Typical Common Emitter Characteristics
(f = 1.0 kHz)
150
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
100
f = 1.0kHz
h oe
10
h ie and h re
h re
3
1 h oe
h fe
h ie
0.1
0.01
0.1
0.2
h fe
0.5 1
2
5
10 20
I C - COLLECTOR CURRENT (mA)
50
100
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Rev. G
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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