BC638BU

DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor BC638 TO−92−3 CASE 135AR 1 Features • Switching and Amplifier Applications • Complement to BC637 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Bent Lead 2 3 1. Emitter 2. Collector 3. Base Compliant MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Emitter Voltage at RBE = 1 kW VCER −60 V Collector−Emitter Voltage VCES −60 V Collector−Emitter Voltage VCEO −60 V Emitter−Base Voltage VEBO −5 V Collector Current IC −1 A Peak Collector Current ICP −1.5 A Base Current IB −100 mA Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ABC 638 YWW A = Assembly Code BC638 = Device Code YWW = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. THERMAL CHARACTERISTICS (Note 1) (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Power Dissipation PD 1 W Dissipation Derate Above 25°C PD 8 mW/°C RqJA 125 °C/W Thermal Resistance, Junction−to−Ambient 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2005 November, 2021 − Rev. 3 1 Publication Order Number: BC638/D BC638 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Symbol Parameter BVCEO Conditions Min. Typ. Max. Unit Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 ICBO Collector Cut−Off Current VCB = −30 V, IE = 0 −60 −0.1 mA IEBO Emitter Cut−Off Current VEB = −5 V, IC = 0 −10 mA hFE1 DC Current Gain VCE = −2 V, IC = −5 mA 25 hFE2 VCE = −2 V, IC = −150 mA 40 hFE3 VCE = −2 V, IC = −500 mA 25 V 160 VCE(sat) Collector−Emitter Saturation Voltage IC = −500 mA, IB = −50 mA −0.5 V VBE(on) Base−Emitter On Voltage VCE = −2 V, IC = −500 mA −1 V Current Gain Bandwidth Product VCE = −5 V, IC = −10 mA, f = 50 MHz fT 100 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number BC638TA Top Mark Package Shipping BC638 TO−92−3, case 135AR (Pb−Free) 2,000 Units / Fan Fold www.onsemi.com 2 BC638 TYPICAL PERFORMANCE CHARACTERISTICS 1000 −500 IC, COLLECTOR CURRENT [mA] IB = − 1.8 mA VCE = − 2V hFE, DC CURRENT GAIN IB = − 1.6 mA −400 IB = − 1.4 mA IB = − 1.2 mA −300 IB = − 1.0 mA IB = − 0.8 mA −200 IB = − 0.6 mA IB = − 0.4 mA −100 IB = − 0.2 mA 100 10 0 0 −10 −20 −30 −40 −50 −1 −10 VBE(sat) −0.1 VCE(sat) −100 −1000 −100 −10 0 −0.4 −0.6 −0.8 −1.0 −1.2 Figure 4. Base−Emitter On Voltage 100 f=1MHz 10 −10 −0.2 VBE, BASE−EMITTER VOLTAGE [V] Figure 3. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage Cob, CAPACITANCE [pF] VCE = − 2V −1 −10 IC, COLLECTOR CURRENT [mA] 1 −1 −1000 −1000 IC = 10 IB −0.01 −1 −100 Figure 2. DC Current Gain IC, COLLECTOR CURRENT [mA] VBE(sat), VCE(sat), SATURATION VOLTAGE [V] Figure 1. Static Characteristic −1 −10 IC, COLLECTOR CURRENT [mA] VCE, COLLECTOR−EMITTER VOLTAGE [V] −100 VCB, COLLECTOR−BASE VOLTAGE [V] Figure 5. Collector Output Capacitance www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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