FCPF190N65S3R0L
Power MOSFET, N-Channel,
SUPERFET) III, Easy Drive,
650 V, 17 A, 190 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
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VDSS
RDS(on) MAX
ID MAX
650 V
190 mΩ @ 10 V
17 A
D
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 159 mW
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
100% Avalanche Tested
This Device is Pb−Free and is RoHS Compliant
Applications
•
•
•
•
G
S
G
D
S
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
TO−220
CASE 340BF
MARKING DIAGRAM
$Y&Z&3&K
FCPF190
N65S3R0
$Y
&Z
&3
&K
FCPF190N65S3R0
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
January, 2019 − Rev. 5
1
Publication Order Number:
FCPF190N65S3R0L/D
FCPF190N65S3R0L
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
Drain Current
ID
IDM
Drain Current
EAS
Value
Unit
650
V
DC
±30
V
AC (f > 1 Hz)
±30
V
Continuous (TC = 25°C)
17*
A
Continuous (TC = 100°C)
11*
42.5*
A
Single Pulsed Avalanche Energy (Note 2)
76
mJ
IAS
Avalanche Current (Note 2)
2.5
A
EAR
Repetitive Avalanche Energy (Note 1)
1.44
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
Power Dissipation
33
W
1.15
W/°C
−55 to +150
°C
300
°C
PD
Pulsed (Note 1)
TC = 25°C
Derate Above 25°C
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 2.5 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 8.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
RθJC
Thermal Resistance, Junction to Case, Max.
3.76
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FCPF190N65S3R0L
FCPF190N65S3R0
TO−220F
Tube
N/A
N/A
50 Units
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2
FCPF190N65S3R0L
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VGS = 0 V, ID = 1 mA, TJ = 25°C
650
V
VGS = 0 V, ID = 1 mA, TJ = 150°C
700
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ Breakdown Voltage Temperature Coefficient
IDSS
ID = 1 mA, Referenced to
Zero Gate Voltage Drain Current
25oC
0.6
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125oC
IGSS
Gate to Body Leakage Current
V/°C
1
mA
±100
nA
4.5
V
190
mW
0.89
VGS = ±30 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 8.5 A
159
Forward Transconductance
VDS = 20 V, ID = 8.5 A
10
S
VDS = 400 V, VGS = 0 V,
f = 1 MHz
1350
pF
30
pF
gFS
VGS = VDS, ID = 1.7 mA
2.5
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
300
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
43
pF
VDS = 400 V, ID = 8.5 A,
VGS = 10 V
(Note 4)
33
nC
7.9
nC
14
nC
f = 1 MHz
0.5
W
VDD = 400 V, ID = 8.5 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
17
ns
16
ns
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
td(on)
Turn−On Delay Time
tr
Turn−On Rise Time
td(off)
Turn−Off Delay Time
42
ns
Turn−Off Fall Time
6
ns
tf
SOURCE−DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Source to Drain Diode Forward Current
17
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
42.5
A
1.2
V
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 8.5 A
VDD = 400 V, ISD = 8.5 A,
dIF/dt = 100 A/ms
313
ns
4.9
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCPF190N65S3R0L
TYPICAL PERFORMANCE CHARACTERISTICS
50
ID Drain Current [A]
10
ID Drain Current [A]
50
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
Notes:
1. VDS = 20 V
2. 250 ms Pulse Test
10
150°C
25°C
Notes:
1. 250 ms Pulse Test
2. TC = 25°C
−55°C
0.1
1
0.1
10
3
7
8
Figure 2. Transfer Characteristics
100
IS, Reverse Drain Current [A]
Note: TC = 25°C
0.2
VGS = 20 V
0.1
0.0
9
Notes:
1. VGS = 0 V
2. 250 ms Pulse Test
10
150°C
1
25°C
0.1
−55°C
0.01
0.001
0
10
20
30
40
0.0
ID, Drain Current [A]
VGS, Gate−Source Voltage [V]
10
10000
Ciss
1000
Coss
Notes:
1. VGS = 0 V
2. f = 1 MHz
ciss = cgs + cgd (cds = shorted)
coss = cds + cgd
crss = cgd
0.1
0.1
1
10
1.0
1.5
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
100000
100
0.5
VSD, Body Diode Forward Voltage [V]
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Capacitance [pF]
6
Figure 1. On−Region Characteristics
VGS = 10 V
1
5
VGS, Gate−Source Voltage [V]
0.3
10
4
VDS, Drain−Source Voltage [V]
0.4
RDS(ON),
Drain−Source On−Resistance [W]
1
Crss
Note: ID = 8.5 A
8
VDS = 130 V
VDS = 400 V
6
4
2
0
100
1000
0
5
10
15
20
25
30
35
VDS, Drain−Source Voltage [V]
Qg, Total Gate Charge [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCPF190N65S3R0L
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3.0
Notes:
1. VDS = 0 V
2. ID = 10 mA
1.1
RDS(ON), [Normalized]
Drain−Source On−Resistance
BVDSS, [Normalized]
Drain−Source Breakdown Voltage
1.2
1.0
0.9
0.8
Notes:
1. VDS = 10 V
2. ID = 8.5 A
2.5
2.0
1.5
1.0
0.5
0.0
−50
0
50
100
150
−50
TJ, Junction Temperature [5C]
0
50
100
150
TJ, Junction Temperature [5C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation vs.
Temperature
20
100
100 ms
1 ms
10
1
Operation in This Area
is Limited by RDS(on)
ID, Drain Current [A]
ID, Drain Current [A]
30 ms
10 ms
DC
Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
0.1
0.01
1
10
5
0
10
100
1000
25
50
75
100
125
150
VDS, Drain−Source Voltage
TC, Case Temperature [5C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
8
6
EOSS [mJ]
15
4
2
0
0
130
260
390
520
650
VDS, Drain to Source Voltage
Figure 11. Eoss vs. Drain to Source Voltage
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5
FCPF190N65S3R0L
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
r(t), Normalized Effective Transient
Thermal Resistance
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
Notes:
ZqJC(t) = r(t) × RqJC
RqJC = 3.76°C/W
Peak TJ = PDM × ZqJC(t) + TC
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
−5
10
−4
10
−3
10
−2
−1
10
10
10
0
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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6
10
1
10
2
FCPF190N65S3R0L
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCPF190N65S3R0L
+
DUT
VSD
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK 3LD
CASE 340BF
ISSUE O
DATE 31 AUG 2016
10.30
9.80
A
2.90
2.50
3.40
3.00
6.60
6.20
3.00
2.60
1 X 45°
B 19.00
17.70
B 15.70
15.00
3.30 B
2.70
3
1
2.14
2.70
2.30
1.20(2X)
0.90
10.70
10.30
1.20
1.00
2.74 (2X)
2.34
NOTES:
4.60
4.30
DOCUMENT NUMBER:
STATUS:
B 0.60
0.40
0.90 (3X)
0.50
0.50 M A
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
98AON13839G
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
http://onsemi.com
TO−220 FULLPAK 3LD
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OFXXX
2
DOCUMENT7NUMBER:
98AON13839G
PAGE 2 OF 2
ISSUE
O
REVISION
RELEASED FOR PRODUCTION FROM FAIRCHILD TO220V03 TO ON SEMICONDUCTOR. REQ. BY B. NG.
DATE
31 AUG 2016
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© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. O
Case Outline Number:
340BF
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