FDD6770A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD6760A N-Channel PowerTrench® MOSFET 25 V, 3.2 mΩ Features General Description „ Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 27 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 21 A „ 100% UIL test „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G S G D-PAK TO -252 (TO-252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 50 131 (Note 1a) -Pulsed 27 A 200 Single Pulse Avalanche Energy EAS Ratings 25 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 72 65 (Note 1a) Operating and Storage Junction Temperature Range 3.7 -55 to +175 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.3 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD6760A Device FDD6760A ©2009 Fairchild Semiconductor Corporation FDD6760A Rev. 1.2 Package D-PAK (TO-252) 1 Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units www.fairchildsemi.com FDD6760A N-Channel Power Trench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 25 V 16 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.6 -7 mV/°C VGS = 10 V, ID = 27 A 2.3 3.2 VGS = 4.5 V, ID = 21 A 4.4 6.0 VGS = 10 V, ID = 27 A, TJ = 150 °C 3.5 4.9 VDS = 5 V, ID = 27 A 186 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1MHz f = 1MHz 2380 3170 pF 525 700 pF 470 710 pF Ω 1.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 13 V, ID = 27 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 17 A 10 20 ns 9 18 ns 28 ns 6 ns 44 62 25 35 nC nC 6 nC 9.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 27 A (Note 2) 0.8 1.3 IF = 27A, di/dt = 100 A/µs V 21 34 ns 8 16 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 29 A. ©2009 Fairchild Semiconductor Corporation FDD6760A Rev. 1.2 2 www.fairchildsemi.com FDD6760A N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 VGS = 4.5 V ID, DRAIN CURRENT (A) 150 VGS = 6 V VGS = 4 V 100 VGS = 3.5 V 50 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 2.5 VGS = 3.5 V 3 VGS = 4.5 V 2 VGS = 6 V 1 VGS = 10 V 0 3.0 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 200 14 ID = 27 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 12 ID = 27 A 10 8 6 TJ = 150 oC 4 2 TJ = 25 oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 200 IS, REVERSE DRAIN CURRENT (A) 200 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 150 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 4 V VDS = 3.5 V 100 TJ = 25 oC 50 TJ = 175 oC TJ = -55 oC 0 0 1 2 3 4 5 VGS = 0 V 10 TJ = 175 oC TJ = -55 oC 1 TJ = 25 oC 0.1 0.2 6 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD6760A Rev. 1.2 100 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD6760A N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 6000 ID = 27 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 13 V VDD = 10 V 4 VDD = 16 V 1000 Coss Crss f = 1 MHz VGS = 0 V 2 100 0.1 0 0 9 18 27 36 45 1 Figure 7. Gate Charge Characteristics 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 TJ = 125 oC 10 TJ = 150 oC TJ = 25 oC VGS = 10 V 90 60 VGS = 4.5 V 30 o Limited by Package 1 0.001 0.01 0.1 1 10 100 0 25 1000 50 75 150 175 3000 P(PK), PEAK TRANSIENT POWER (W) 10 us 100 100 us THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms DC Rθ JC = 2.3 oC/W TC = 25 oC 0.1 0.1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 1 100 o Figure 9. Unclamped Inductive Switching Capability 10 RθJC = 2.3 C/W Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 10 70 VGS = 10 V SINGLE PULSE RθJC = 2.3 oC/W TC = 25 oC 100 20 -5 10 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD6760A Rev. 1.2 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD6760A N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 2.3 C/W 0.02 -5 10 -4 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 96 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD6760A Rev. 1.2 5 www.fairchildsemi.com FDD6760A N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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