FDH5500_F085

MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW FDH5500-F085 Features www.onsemi.com • Typ RDS(on) = 5.2 m at VGS = 10 V, ID = 75 A • Typ Qg(10) = 118 nC at VGS = 10 V • Simulation Models • • • • −Temperature Compensated PSPICEt and Saber® Models Peak Current vs Pulse Width Curve UIS Rating Curve AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant VDSS RDS(ON) MAX ID MAX 55 V 7 m 75 A D Applications • • • • G DC Linear Mode Control Solenoid and Motor Control Switching Regulators Automotive Systems S DRAIN (FLANGE) G D S JEDEC TO−247 CASE 340CK MARKING DIAGRAM $Y&Z&3&K FDH5500 $Y &Z &3 &K FDH5500 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 April, 2020 − Rev. 2 1 Publication Order Number: FDH5500−F085/D FDH5500−F085 MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Value Unit VDSS Drain to Source Voltage (Note 1) 55 V VDGR Gate to Gate Voltage (RGS = 20 k) (Note 1) 55 V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 135°C, VGS = 10 V) 75 A VGS ID Parameter Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 864 mJ PD Power Dissipation (TC = 25°C) 375 W − Derate Above 25°C 2.5 W/°C −55 to +175 °C Max. Lead Temp. for Soldering (at 1.6 mm from case for 10 sec) 300 °C Max. Package Temp. for Soldering (Package Body for 10 sec) 260 °C TJ, TSTG TL Tpkg Operating and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting TJ = 25°C to 175°C. 2. Starting TJ = 25°C, L = 0.48 mH, IAS = 60 A THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJC Thermal Resistance Junction to Case 0.4 _C/W RJA Thermal Resistance Junction to Ambient TO−247, 1in2 copper pad area 30 _C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDH5500 FDH5500−F085 TO−247 Tube N/A 30 Units www.onsemi.com 2 FDH5500−F085 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V, VDS = 45 V 1 VDS = 50 V, VGS = 0 V, VDS = 45 V, TC = 150_C 250 VGS = ±20 V ±100 nA 2.9 4.0 V 5.2 7 m Gate to Source Leakage Current 55 V A ON CHARACTERISTICS VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A RDS(ON) Drain to Source On Resistance ID = 75 A, VGS = 10 V 2.0 DYNAMIC CHARACTERISTICS CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Qg(TOT) VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 30 V ID = 75 A RL = 0.4  Ig = 1.0 mA Total Gate Charge at 20 V VGS = 0 V to 20 V Qg(10) Total Gate Charge 10 V VGS = 0 V to 10 V Qg(TH) Threshold Gate Charge VGS = 0 V to 2 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 75 A, RL = 0.4  Ig = 1.0 mA 3565 pF 1310 pF 395 pF 206 268 nC 118 153 nC 6.2 8.1 nC 17.8 nC 51 nC SWITCHING CHARACTERISTICS ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 30 V ID = 75 A RL = 0.4  VGS = 10 V RGS = 2.5  Fall Time 185 ns 13.7 ns 102 ns 34 ns 22 ns Turn-Off Time 91 ns DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage ISD = 75 A 1 1.25 V trr Reverse Recovery Time IF = 75 A, dlSD/dt = 100 A/s 60 78 ns Qrr Reverse Recovery Charge 77 100 nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FDH5500−F085 TYPICAL CHARACTERISTICS 1.2 180 1.0 150 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER (TC = 25°C unless otherwise noted) 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(o C) CURRENT LIMITED BY PACKAGE 120 VGS = 10V 90 60 30 0 175 25 Figure 1. Normalized Power Dissipation vs. Case Temperature 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZJC 1 DUTY CYCLE − DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 P DM t1 t2 NOTES: DUTY FACTOR: D = t 1/t 2 PEAK T J = P DM x Z JA x R JA + T C SINGLE PULSE 0.01 −5 10 10 −4 −3 −2 10 10 10 t, RECTANGULAR PULSE DURATION(s) −1 1 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 T C = 25 o C VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 1000 175 − T C I = I2 150 100 SINGLE PULSE 10 −5 10 −4 10 −3 −2 −1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 0 10 1 10 FDH5500−F085 TYPICAL CHARACTERISTICS (Continued) (TC = 25°C unless otherwise noted) 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100us 100 1ms 10 10ms DC 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(on) 0.1 1 SINGLE PULSE TJ = MAX RATED TC = 25oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS − VDD) If R 00 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS − VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.01 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 Figure 5. Forward Bias Safe Operating Area 160 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VDD = 5V 120 80 TJ = 175oC 40 TJ = −55oC 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 6V VGS = 5V 40 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.2 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX TJ = 175oC TJ = 25oC 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics 10 0 VGS = 5.5V 80 0 7 30 20 5000 VGS = 4.5V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID = 75A 1000 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 120 Figure 7. Transfer Characteristics 40 100 VGS = 10V TJ = 25oC 0 rDS(on), DRAIN TO SOURCE ON−RESISTANCE (m) 10 Figure 6. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 1 tAV, TIME IN AVALANCHE (ms) 10 Figure 9. Drain to Source On Resistance Variation vs Gate to Source Voltage 2.0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −80 ID = 75A VGS = 10V −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(o C) 200 Figure 10. Normalized Drain to Source On Resistance vs. Junction Temperature www.onsemi.com 5 FDH5500−F085 TYPICAL CHARACTERISTICS (Continued) (TC = 25°C unless otherwise noted) 1.20 VGS = VDS ID = 250 mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 1.0 ms 0.8 0.6 0.4 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 ID = 1mA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 −80 Figure 11. Normalized Gate Threshold Voltage vs. Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1000 Coss 100 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE(V) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 f = 1MHz VGS = 0V −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 80 Figure 13. Capacitance vs. Drain to Source Voltage 10 ID = 75A 8 VDD = 30V VDD = 20V 6 VDD = 40V 4 2 0 0 20 40 60 80 100 Qg, GATE CHARGE(nC) 120 140 Figure 14. Gate Charge vs. Gate to Source Voltage PSPICE is a trademark of MicroSim Corporation. Saber is a registered trademark of Sabremark Limited Partnership. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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