FDH700_T50R

DISCRETE POWER AND SIGNAL TECHNOLOGIES FDH700 ULTRA FAST DIODE Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY Absolute Maximum Ratings (note 1) TA = 25OC unless otherwise noted Parameter Value Units Storage Temperature -65 to +200 O C Maximum Junction Temperature -65 to +175 O C Total Power Dissipation at 25OC 250 mW 1.67 mW/OC Derate above 25OC Working Inverse Voltage DC Forward Current 20 V 150 mA Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired CATHODE BAND 0.500 Minimum 12.70 Typ 1.000 LOGO FD H7 00 0.022 (0.558) Diameter 0.018 (0.458) Typ 20 mils 0.200 (5.08) 0.120 (3.05) Electrical Characteristics SYM Breakdown Voltage IR Reverse Leakage VF Forward Voltage CT TA = 25OC unless otherwise noted CHARACTERISTICS BV TRR 0.090 (2.28) Diameter 0.060 (1.53) MIN MAX 30 420 520 640 760 810 0.89 UNITS TEST CONDITIONS V IR = 50 50 nA uA VR = VR = 500 610 740 900 990 1.25 mV mV mV mV mV V IF IF IF IF IF IF = = = = = = 5.0 uA 20 V 20 V TA = 150OC 10 uA 100 uA 1.0 mA 10 mA 20 mA 50 mA Reverse Recovery Time 900 ps IF= IR = 10 mA IRR = 1.0 mA RLoop = 100 Ohm Diode Capacitance 1.5 pF VR = © 1999 Fairchild Semiconductor Corporation 0 V, f = 1.0 MHz FDH700 - Rev. A DISCRETE POWER AND SIGNAL TECHNOLOGIES STANDARD DIGITAL MARKING CRITERIA MAXIMUM CHARACTERS PER LINE: 3 MAXIMUM NUMBER OF LINES: 4 LOGO AND CHARACTERS M & W COUNT AS 2 CHARACTERS EACH LEADS: COPPER CLAD STEEL TYPICAL 20 Mils LEADS TIN DIPPED (60% SN 40% PB) 0.021 (0.533) Diameter 0.019 (0.483) STUDS: DUMET (ALLOY 42) GLASS SLEEVE 0.150 (3.810) 0.140 (3.556) CATHODE BAND 1.105 (28.067) 1.081 (27.457) 0.050 (1.270) Maximum SEE NOTE 1 BELOW Package Weight 0.14 grams 0.074 (1.880) Diameter 0.068 (1.727) NOTE 1: LEAD DIAMETER NOT CONTROLLED IN THIS ZONE TO ALLOW FOR FLASH, LEAD FINISH BUILD-UP, & MINOR IRREGULARITIES OTHER THAN SLUGS. DO-35 PACKAGE Fairchild Semiconductor's Criteria 11-MAR-97 DISCRETE POWER AND SIGNAL TECHNOLOGIES FD700 Ultra Fast Diode Diode Absolute Maximum Ratings (note 1) TA = 25OC unless otherwise noted Parameter Value Units Storage Temperature -65 to +200 O C Maximum Junction Temperature -65 to +175 O C Total Power Dissipation at 25OC 250 mW 1.67 mW/OC Derate above 25OC Working Inverse Voltage 20 V DC Forward Current 150 mA Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired DO-7 PACKAGE Electrical Characteristics SYM CHARACTERISTICS BV Breakdown Voltage IR Reverse Leakage VF Forward Voltage TRR CT TA = 25OC unless otherwise noted MIN MAX 30 420 520 640 760 810 0.89 UNITS TEST CONDITIONS V IR = 50 50 nA uA VR = VR = 500 610 740 880 950 1.10 mV mV mV mV mV V IF IF IF IF IF IF = = = = = = 5.0 uA 20 V 20 V TA = 150OC 10 uA 100 uA 1.0 mA 10 mA 20 mA 50 mA Reverse Recovery Time 700 ps IF= IR = 10 mA IRR = 1.0 mA RLoop = 100 Ohm Diode Capacitance 1.0 pF VR = © 1997 Fairchild Semiconductor Corporation 0 V, f = 1.0 MHz Rev. A June 1998 DISCRETE POWER AND SIGNAL TECHNOLOGIES LEADS:BORATED (ALLOY 42) DUMET TYPICAL 20 mils Diameter 0.021 (0.533) Diameter 0.019 (0.483) LEADS TIN DIPPED (60% SN 40% PB) Typical Solder Thickness in micro-inches Min Avg Max 125.9 162.1 204.3 GLASS PLUG GLASS SLEEVE 0.287 (7.290) 0.265 (6.731) "C" BEND SPRING SOLDER PREFORM Sb/Sn (5% - 10% Sb) BORATED (ALLOY 42) DUMET COMFAB STUDSEAL (FIRST SEAL) 1.110 (28.194) 1.085 (27.559) 0.050 (1.270) MAXIMUM SEE NOTE 1 BELOW 0.097 (2.464) Diameter 0.093 (2.362) NOTE 1: LEAD DIAMETER NOT CONTROLLED IN THIS ZONE TO ALLOW FOR FLASH, LEAD FINISH BUILD-UP, & MINOR IRREGULARITIES OTHER THAN SLUGS. DO-7 PACKAGE Fairchild Semiconductor's Criteria 13-APR-93 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3