FGH40T120SMDL4

IGBT - FS, Trench 1200 V, 40 A FGH40T120SMDL4 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. www.onsemi.com Features • • • • • • FS Trench Technology, Positive Temperature Coefficient Excellent Switching Performance due to Kelvin Emitter Pin Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A 100% of the Parts Tested for ILM High Input Impedance This Device is Pb−Free and is RoHS Compliant VCES IC 1200 V 40 A C E1: Kelvin Emitter E2: Power Emitter G E1 Applications E2 • Solar Inverter, Welder, UPS and PFC Applications C E2 E1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM $Y&Z&3&K FGH40T120 SMDL4 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T120SMDL4 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 December, 2019 − Rev. 2 1 Publication Order Number: FGH40T120SMDL4/D FGH40T120SMDL4 ABSOLUTE MAXIMUM RATINGS Symbol FGH40T120SMDL4 Unit VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V TC = 25°C 80 A TC = 100°C 40 A TC = 25°C 160 A 160 A IC Description Collector Current ILM (Note 1) Clamped Inductive Load Current ICM (Note 2) Pulsed Collector Current IF Diode Continuous Forward Current TC = 25°C 80 A Diode Continuous Forward Current TC = 100°C 40 A 240 A 555 W IFM Diode Maximum Forward Current PD Maximum Power Dissipation 277 W TJ Operating Junction Temperature −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C TC = 25°C TC = 100°C TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 600 V, VGE = 15 V, IC = 160 A, RG = 20 W, Inductive Load. 2. Limited by Tjmax. THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SQDT−F155 Unit RqJC (IGBT) Thermal Resistance, Junction to Case 0.27 _C/W RqJC (Diode) Thermal Resistance, Junction to Case 0.89 _C/W 40 _C/W RqJA Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Reel Size Tape Width Quantity FGH40T120SMDL4 FGH40T120SMDL4 TO−247−4LD − − 30 www.onsemi.com 2 FGH40T120SMDL4 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 mA 1200 − − V ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA BVCES ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, TC = 25 °C − 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.0 − V VCE = 30 V, VGE = 0 V, f = 1MHz − 4300 − pF − 180 − pF − 100 − pF − 44 − ns − 42 − ns Turn−Off Delay Time − 464 − ns Fall Time − 24 − ns Eon Turn−On Switching Loss − 2.24 − mJ Eoff Turn−Off Switching Loss − 1.02 − mJ Ets Total Switching Loss − 3.26 − mJ Td(on) Turn−On Delay Time − 42 − ns − 48 − ns Turn−Off Delay Time − 518 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Td(off) Tf Turn−On Delay Time Rise Time Rise Time VCC = 600 V, IC = 40 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 25°C VCC = 600 V, IC = 40 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 25°C Fall Time − 24 − ns Eon Turn−On Switching Loss − 3.11 − mJ Eoff Turn−Off Switching Loss − 2.01 − mJ Ets Total Switching Loss − 5.12 − mJ Qg Total Gate Charge − 370 − nC Qge Gate to Emitter Charge − 23 − nC Qgc Gate to Collector Charge − 210 − nC VCE = 600 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40T120SMDL4 ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Parameter Diode Forward Voltage Trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Trr Diode Reverse Recovery Charge Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Test Conditions IF = 40 A Min Typ Max Unit TC = 25°C − 3.8 4.8 V TC = 175°C − 2.7 − − 65 − ns − 7.2 − A − 234 − nC − 200 − ns − 18.0 − A − 1800 − nC VR = 600 V, IF = 40 A diF/dt = 200 A/ms, TC = 25°C VR = 600 V, IF = 40 A diF/dt = 200 A/ms, TC = 175°C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH40T120SMDL4 TYPICAL PERFORMANCE CHARACTERISTICS 300 300 o TC = 25 C 20V 200 12V 150 100 VGE=10V 15V 150 12V 100 VGE=10V 50 0 1 2 3 4 5 6 7 8 Collector−Emitter Voltage, VCE[V] 9 0 10 0 Figure 1. Typical Output Characteristics 160 4 Collector Emitter Voltage, VCE [V] Collector Current, IC [A] o TC = 25 C o TC = 175 C −−− 80 40 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 80A 40A 2 IC=20A 20 50 75 100 125 150 Case Temperature TC [oC] 175 Common Emitter o TC = 25 C TC = 175 C Collector Emitter Voltage, VCE [V] Collector Emitter Voltage, VCE [V] 10 3 o 16 80A 12 40A 8 IC=20A 4 4 9 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 0 2 3 4 5 6 7 8 Collector−Emitter Voltage, VCE[V] Common Emitter VGE = 15V 1 25 5 Figure 3. Typical Saturation Voltage Characteristics 20 1 Figure 2. Typical Output Characteristics Common Emitter VGE = 15V 120 0 17V 200 50 0 20V 250 Collector Current, IC [A] Collector Current, IC [A] 250 0 o TC = 175 C 15V 17V 8 12 16 Gate−Emitter Voltage, VGE [V] 16 12 40A 8 Figure 5. Saturation Voltage vs. VGE IC=20A 4 0 20 80A 0 4 8 12 16 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 20 FGH40T120SMDL4 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 15 6000 Cies Gate Emitter Voltage, VGE [V] Capacitance [pF] 5000 Common Emitter VGE = 0 V, f = 1Mhz TC = 25 C 4000 3000 2000 Coes 1000 Crss 12 200V 400V VCC = 600V 9 6 3 Common Emitter o TC = 25 C 1 0 10 Collector−Emitter Voltage, VCE [V] Figure 7. Capacitance Characteristics 50 100 150 200 250 300 350 400 Gate Charge, Qg [nC] Figure 8. Gate Charge Characteristics 300 10000 tr 1000 100 Switching Time [ns] Switching Time [ns] 0 td(on) Common Emitter VCC = 600V, V GE = 15V IC = 40A td(off) 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 o o TC = 25 C TC = 25 C o o TC = 175 C 10 0 10 20 30 40 50 Gate Resistance, RG [W] TC = 175 C 60 1 70 0 Figure 9. Turn−on Characteristics vs. Gate Resistance 20 30 40 50 Gate Resistance, RG[W] 70 300 Switching Time [ns] Eon Eoff Common Emitter VCC = 600V, VGE = 15V IC = 40A 1 100 tr td(on) o TC = 25 C o o TC = 175 C 0 10 20 30 40 50 Gate Resistance, RG[W] Common Emitter VGE = 15V, RG = 10W o TC = 25 C 0.5 60 Figure 10. Turn−off Characteristics vs. Gate Resistance 8 Switching Loss [mJ] 10 60 10 10 70 TC = 175 C 20 30 40 50 60 70 80 Collector Current, IC [A] Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 6 FGH40T120SMDL4 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 10 1000 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 10 W Eoff 1 Common Emitter VGE = 15V, RG = 10 W o o TC = 25 C TC = 25 C o o TC = 175 C 1 10 20 30 40 50 60 70 0.1 10 80 TC = 175 C 20 Collector Current, IC [A] Figure 13. Turn−off Characteristics vs. Collector Current 200 70 80 o TC = 100 C 80 40 Duty cycle : 50% 10ms 100ms IcMAX (Continuous) Collector Current, Ic [A] Collector Current, IC [A] 60 C [A] 100 160 1ms 10 ms 10 DC Operation 1 Single Nonrepetitive 0.1 Pulse Tc = 25  C Curves must be derated linearly with increase in temperature T = 100 oC C Power Dissipation = 277 W 10k 50 IcMAX (Pulsed) load Current : peak of square wave 0 1k 40 Figure 14. Switching Loss vs. Collector Current VCC = 600V 120 30 Collector Current, I 100k 0.01 0.1 1M Switching Frequency, f [Hz] Figure 15. Load Current vs. Frequency 1 10 100 1000 Collector−Emitter Voltage, VCE [V] Figure 16. SOA Characteristics 21 o Reverse Recovery Current, Irr [A] TC = 25 C Forward Current, IF [A] 100 10 o TC = 25 C 18 T = 175oC C diF/dt = 200A/ ms 15 12 diF/dt = 100A/ ms 9 diF/dt = 200A/ ms 6 diF/dt = 100A/ ms 3 o TC = 175 C −−− 1 0 1 2 3 4 Forward Voltage, VF [V] 0 5 Figure 17. Forward Characteristics 0 20 40 60 Forward Current, IF [A] 80 Figure 18. Reverse Recovery Current www.onsemi.com 7 FGH40T120SMDL4 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3000 360 o o 300 TC = 175 C Stored Recovery Charge, Qrr [nC] TC = 25 C o --- 240 180 di/dt = 100A/ ms di/dt = 200A/ ms 120 60 0 20 40 60 2500 o TC = 175 C --- 2000 1500 di/dt = 100A/ ms 1000 500 0 80 di/dt = 200A/ ms 0 20 40 60 Forward Current, , IF [A] Forward Current, , IF [A] Figure 19. Reverse Recovery Time Figure 20. Stored Charge 1 Thermal Response [Zthjc] 0 0.5 0.1 0.3 0.1 PDM 0.01 0.05 t1 0.02 0.01 1E−3 1E−6 single pulse 1E−5 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E−4 1E−3 0.01 0.1 1 t1, Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of IGBT 2 1 Thermal Response [Zthjc] Reverse Recovery Time, trr [ns] TC = 25 C 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 PDM t1 single pulse 1E−3 1E−5 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E−4 1E−3 0.01 0.1 t1, Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 8 1 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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