FGPF70N30

FGPF70N30 300V, 70A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF70N30 offers the optimum solution for PDP applications where low-condution loss is essential. • Low saturation voltage: VCE(sat) =1.4V @ IC = 40A • High Input Impedance • Fast switching • RoHS Complaint Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter www.DataSheet4U.com Absolute Maximum Ratings Symbol Description FGPF70N30 Units VCES Collector-Emitter Voltage 300 V VGES Gate-Emitter Voltage ±30 V 25oC 160 A 52 W IC pulse(1) Pulsed Collector Current @ TC = PD Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC TJ 20.8 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o -55 to +150 oC o 300 C C Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 2.4 o C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 o C/W Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj ©2006 Fairchild Semiconductor Corporation FGPF70N30 Rev. A 1 www.fairchildsemi.com FGPF70N30 300V, 70A PDP IGBT October 2006 Device Marking Device Package Packaging Type FGPF70N30 FGPF70N30TU TO-220F Rail / Tube Electrical Characteristics T C Symbol Max Qty Qty per Tube per Box 50ea - = 25oC unless otherwise noted Parameter Test Conditions Min. Typ. Max. 300 -- -- Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA V V/oC ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA -- 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 100 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA 2.5 4.0 5 V IC =20A, VGE = 15V -- 1.2 1.5 V IC =40A, VGE = 15V -- 1.4 -- V IC = 70A, VGE = 15V TC = 25oC -- 1.8 -- IC = 70A, VGE = 15V TC = 125oC -- 1.9 -- -- 1300 -- pF -- 180 -- pF -- 60 -- pF -- 17 -- ns -- 83 -- ns -- 103 -- ns -- 160 300 ns -- 18 -- ns -- 83 -- ns -- 104 -- ns -- 250 -- ns -- 71 -- nC -- 10 -- nC -- 34 -- nC -- On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE V V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 200 V, IC = 40A RG = 15Ω, VGE = 15V Resistive Load, TC = 25oC VCC = 200 V, IC = 40A RG = 15Ω, VGE = 15V Resistive Load, TC = 125oC VCE = 200 V, IC = 40A VGE = 15V 2 FGPF70N30 Rev. A www.fairchildsemi.com FGPF70N30 300V, 70A PDP IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 160 Figure 2. Typical Output Characteristics 160 o o T C = 25 C 15V 12V 120 80 V GE = 8V 40 12V 2 4 6 8 Collector-Emitter Voltage, V CE [V] 80 V GE = 8V 40 0 10 0 Figure 3.Typical Saturation Voltage Characteristics Com m on Em itter V C E = 20V o 25 C Collector Current, IC [A] TC = 120 o T C = 125 C C Collector Current, I [A] 10 160 C om m on Em itter V G E = 15V 80 40 0 0 1 2 C ollector-Em itter Voltage, V CE 3 [V] o 80 40 4 8 12 G ate-Em itter Voltage, V G E [ V ] 16 Figure 6. Saturation Voltage vs.VGE 20 70A 1.8 1.5 o 25 C T C = 125 C 0 Collector-Emitter Voltage, VCE [V] C om m on Em itter V G E = 15V TC = 120 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 2 4 6 8 Collector-Emitter Voltage, V CE [V] Figure 4. Transfer Characteristics 160 2.1 10V 120 0 0 T C = 125 C 15V 20V 10V Collector Current, IC [A] Collector Current, IC [A] 20V 40A 1.2 I C = 20A C o m m o n E m itte r o TC = 25 C 16 12 8 40A 4 70A IC = 2 0 A 0.9 0 25 50 75 100 125 o C ase Tem perature, T C [ C ] 00 150 8 12 16 20 G a te -E m itte r V o lta g e , V G E [V ] 3 FGPF70N30 Rev. A 4 www.fairchildsemi.com FGPF70N30 300V, 70A PDP IGBT Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics (Continued) Figure 7. Saturation Voltage vs. VGE 20 FGPF70N30 300V, 70A PDP IGBT Typical Performance Characteristics Figure 8. Capacitance Characteristics 5000 C om m on Em itter C ies 16 1000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o T C = 125 C 12 8 4 Common Emitter V GE = 0V, f = 1MHz o I C = 20A 0 20 Figure 9. Gate Charge Characteristics 9 VCC = 200V 6 3 0 20 40 60 G a te C h a rg e , Q g [n C ] 50us 1m s 10 D C O peration 1 S ingle N onrepetitive o P ulse T c=25 C C urves m ust be derated linearly with increase in tem perature 0.1 0.01 0.1 80 Figure 11. Turn-On Characteristics vs. Gate Resistance 1 10 100 Collector-Em itter Voltage, V CE [V] 1000 Figure 12. Turn Off Characteristics vs. Gate Resistance 1000 2000 C o m m o n E m itte r V C C = 20 0 V , V G E = 1 5 V IC = 4 0 A T C = 2 5 OC T C = 1 2 5 OC 100 1000 Switching Time [ns] Switching Time [ns] 30 100us Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 200 100 VCC=100V 0 5 10 15 20 25 Collector-Emitter Voltage, V CE [V] Figure 10. SOA Characteristics C o m m o n E m itte r R L = 5Ω T C = 2 5 OC 12 T C = 25 C 10 4 8 12 16 G ate-E m itter V o ltage, V G E [V ] 15 C res 100 70A 40A 00 C oes tr tf tf 100 Com m on Em itter V CC = 200V, V G E = 15V I C = 40A T C = 25 O C T C = 125 O C t d(off) t d (o n ) 10 10 0 20 40 60 80 G a te R e s is ta n c e , R G [ Ω ] 0 100 40 60 80 100 G ate R esistance, R G [ Ω ] 4 FGPF70N30 Rev. A 20 www.fairchildsemi.com (Continued) Figure 13. Turn-On Characteristics vs. Collector Current Figure 14. Turn-Off Characteristics vs. Collector Current 1000 500 Com m on Em itter V G E = 15V, R G = 15 Ω V C C =200V Com m on Em itter V G E = 15V, R G = 15 Ω V C C =200V 400 T C = 25 O C T C = 125 O C Switching Time [ns] Switching Time [ns] FGPF70N30 300V, 70A PDP IGBT Typical Performance Characteristics 100 tr T C = 25 O C T C = 125 O C 300 tf 200 tf td(on) t d(off) 10 0 10 20 30 40 50 60 100 70 0 10 20 30 40 50 60 70 C ollecto r C urrent, I C [A] C ollector C urrent, I C [A] Figure 15. Switching Loss vs Gate Resistance Figure 16. Switching Loss VS Collector Current 1000 2000 1000 Switching Loss [uJ] Switching Loss [uJ] E off E on 100 Com m on Em itter V CC = 200V, V GE = 15V I C = 40A T C = 25 O C T C = 125 O C 10 100 E o ff Com m on E m itter V G E = 15V , R G = 15 Ω V C C =200V T C = 25 O C T C = 125 O C E on 10 0 20 40 60 80 G ate R esistance, R G [ Ω ] 0 100 10 20 30 40 50 60 70 C o llector C urrent, I C [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 Pdm 0 .0 1 s in g le p u ls e t1 0 .0 1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 E -3 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c t a n g u la r P u ls e D u r a t i o n [ s e c ] 5 FGPF70N30 Rev. A www.fairchildsemi.com 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 6 FGPF70N30 Rev. A 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 www.fairchildsemi.com FGPF70N30 300V, 70A PDP IGBT TO-220F The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 7 FGPF70N30 Rev. A www.fairchildsemi.com FGPF70N30 300V, 70A PDP IGBT TRADEMARKS