KSA928AOBU

PNP Epitaxial Silicon Transistor KSA928A Features • Audio Power Amplifier • Complement to KSC2328A • 3 W Output Application www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) (Notes 1, 2) Parameter Symbol Value Unit VCBO Collector−Base Voltage −30 V VCEO Collector−Emitter Voltage −30 V VEBO Emitter−Base Voltage −5 V IC Collector Current −2 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C TO−92 3 LF CASE 135AM MARKING DIAGRAM AA9 28AX YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS 1 (Values are at TA = 25°C unless otherwise noted.) (Note 3) Parameter Value Unit 1000 mW Derate Above 25_C 8.0 mW/°C Thermal Resistance, Junction−to−Ambient 125 °C/W Symbol PD RθJA Power Dissipation 3. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2002 March, 2021 − Rev. 2 1 A A928A X YWW 2 1: Emitter 2: Collector 3: Base 3 = Assembly Code = Device Code =O/Y = Date Code ORDERING INFORMATION Device Package Shipping KSA928AOTA TO−92 3 LF (Pb−Free) 2000 / Fan−Fold KSA928AYTA TO−92 3 LF (Pb−Free) 2000 / Fan−Fold Publication Order Number: KSA928A/D KSA928A ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector−Base Breakdown Voltage IC = −100 mA, IE = 0 −30 − − V BVCEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −30 − − V BVEBO Emitter−Base Breakdown Voltage IE = −1 mA, IC = 0 −5 − − V ICBO Collector Cut−Off Current VCB = −30 V, IE = 0 − − −100 nA IEBO Emitter Cut−Off Current VEB = −5 V, IC = 0 − − −100 nA hFE DC Current Gain VCE = −2 V, IC = −500 mA 100 − 320 VBE(on) Base−Emitter On Voltage VCE = −2 V, IC = −500 mA − − −1.0 V VCE(sat) Collector−Emitter Saturation Voltage IC = −1.5 A, IB = −30 mA − − −2.0 V Current Gain Bandwidth Product VCE = −2 V, IC = −500 mA − 120 − MHz Collector Output Capacitance VCB = −10 V, IE = 0, f = 1 MHz − 48 − pF fT Cob Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification O Y hFE 100 ~ 200 160 ~ 320 www.onsemi.com 2 KSA928A TYPICAL PERFORMANCE CHARACTERISTICS −1400 1000 IB = −7 mA IB = −6 mA −1000 IB = −5 mA −800 IB = −4 mA −600 IB = −3 mA −400 IB = −2 mA −200 0 VCE = −2 V hFE, DC Current Gain IC, Collector Current (mA) −1200 IB = −1 mA 0 −2 −4 −6 −8 −10 −12 −14 100 10 −1 −16 −10 VCE, Collector−Emitter Voltage (V) VCE = −2 V −1200 IC, Collector Current (mA) VCE(sat), Saturation Voltage (V) −1400 −1000 TA = 25°C −0.1 TA = −40°C −0.01 −1 −10 −100 −1000 −200 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage −1.4 1.4 IC (Max) 1s 1 ms DC Operating TC = 25°C VCEO (Max) −0.01 −0.1 −400 VBE, Base−Emitter Voltage (V) PC, Power Dissipation (W) −0.1 −600 IC, Collector Current (mA) IC (Max) Pulse −1 −800 0 0.0 −10000 −10 IC, Collector Current (A) −5000 Figure 2. DC Current Gain TA = 125°C IC = 50 IB −1000 IC, Collector Current (mA) Figure 1. Static Characteristic −1 −100 −1 −10 −100 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 VCE, Collector−Emitter Voltage (V) TA, Ambient Temperature (5C) Figure 5. Safe Operating Area Figure 6. Power Derating www.onsemi.com 3 150 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 8.0x4.9 (LEADFORMED) CASE 135AM ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON14058G DATE 14 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 8.0X4.9 (LEADFORMED) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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