MJF44H11 (NPN),
MJF45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
For Isolated Package Applications
http://onsemi.com
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
SILICON POWER TRANSISTORS
10 AMPERES
80 VOLTS, 36 WATTS
• Low Collector−Emitter Saturation Voltage −
•
•
•
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak
1
Symbol
Value
Unit
VCEO
80
Vdc
VEB
5
Vdc
IC
10
20
Adc
36
0.288
W
W/°C
2.0
0.016
W
W/°C
−55 to 150
°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
3.5
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 6
1
2
ISOLATED TO−220
CASE 221D
STYLE 2
3
MARKING DIAGRAM
F4xH11G
AYWW
F4xH11 = Specific Device Code
x = 4 or 5
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Package
Shipping
MJF44H11
Device
TO−220 FULLPACK
50 Units/Rail
MJF44H11G
TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
MJF45H11
TO−220 FULLPACK
50 Units/Rail
MJF45H11G
TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJF44H11/D
MJF44H11 (NPN), MJF45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
VCEO(sus)
80
−
−
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
−
−
1.0
mA
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
−
−
10
mA
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
−
−
1.0
Vdc
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
−
−
1.5
Vdc
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
hFE
60
−
−
−
40
−
−
−
−
130
230
−
−
−
−
50
40
−
−
−
−
300
135
−
−
−
−
500
500
−
−
−
−
140
100
−
−
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
Ccb
MJF44H11
MJF45H11
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
pF
fT
MJF44H11
MJF45H11
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJF44H11
MJF45H11
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
ns
0.1
0.1
0.02
0.01
SINGLE PULSE
0.02
0.05
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.03
0.01
0.01
tf
MJF44H11
MJF45H11
0.2
0.2
0.02
ns
D = 0.5
0.3
0.07
0.05
ns
ts
MJF44H11
MJF45H11
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
1.0
0.7
0.5
td + tr
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
Figure 1. Thermal Response
http://onsemi.com
2
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
MJF44H11 (NPN), MJF45H11 (PNP)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150°C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
50
30
20
1.0 ms
100 ms
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
10 ms
TC ≤ 70° C
DUTY CYCLE ≤ 50%
dc
1.0 ms
MJF44H11/MJF45H11
5.0 7.0 10
2.0 3.0
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMPS)
100
TA
TC
3.0
60
2.0
40
TA
1.0
20
0
0
TC
0
20
40
60
80
100
120
T, TEMPERATURE (°C)
Figure 3. Power Derating
http://onsemi.com
3
140
160
MJF44H11 (NPN), MJF45H11 (PNP)
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
VCE = 4 V
100
VCE = 1 V
TJ = 25°C
10
0.1
1
VCE = 4 V
100
1V
TJ = 25°C
10
0.1
10
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJF44H11 DC Current Gain
Figure 5. MJF45H11 DC Current Gain
1000
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125°C
TJ = 125°C
25°C
100
-40°C
VCE = 1 V
10
0.1
1
1
10
Figure 6. MJF44H11 Current Gain
versus Temperature
Figure 7. MJF45H11 Current Gain
versus Temperature
1.2
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
0.1
IC, COLLECTOR CURRENT (AMPS)
VBE(sat)
0.8
0.6
0
0.1
VCE = 1 V
IC, COLLECTOR CURRENT (AMPS)
1
0.2
100
10
10
1.2
0.4
25°C
-40°C
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
1
0.8
0.6
0.4
IC/IB = 10
TJ = 25°C
VCE(sat)
0.2
0
0.1
10
VBE(sat)
Figure 8. MJF44H11 On−Voltages
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. MJF45H11 On−Voltages
http://onsemi.com
4
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
C
S
Q
SCALE 1:1
SEATING
PLANE
U
1 2 3
−Y−
K
G
N
L
D
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. CATHODE
STYLE 5:
PIN 1. CATHODE
2. ANODE
3. GATE
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DESCRIPTION:
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
MARKING
DIAGRAMS
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
STYLE 6:
PIN 1. MT 1
2. MT 2
3. GATE
xxxxxx
G
A
Y
WW
DOCUMENT NUMBER:
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
H
DATE 27 FEB 2009
98ASB42514B
TO−220 FULLPAK
xxxxxxG
AYWW
AYWW
xxxxxxG
AKA
Bipolar
Rectifier
= Specific Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
A
Y
WW
xxxxxx
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative