MJW21196

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS Total Harmonic Distortion Characterized High DC Current Gain − hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc IC 16 30 Adc Base Current − Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg −    65 to +150 °C Symbol Max Unit RqJC 0.7 °C/W Collector Current Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range 1 2 TO−247 CASE 340L 3 MARKING DIAGRAM MJW2119x AYWWG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient RqJA 40 1 BASE 3 EMITTER 2 COLLECTOR °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. x A Y WW G = 5 or 6 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MJW21195 MJW21195G MJW21196 MJW21196G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 3 1 Package Shipping TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MJW21195/D MJW21195 (PNP) MJW21196 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typical Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 50 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 50 mAdc 4.0 2.25 − − − − 20 8 − − 80 − − − 2.0 − − − − 1.0 3 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) Adc ON CHARACTERISTICS hFE DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) http://onsemi.com 2 THD % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS NPN MJW21196 F T, CURRENT BANDWIDTH PRODUCT (MHz) FT, CURRENT BANDWIDTH PRODUCT (MHz) PNP MJW21195 6.5 6.0 VCE = 10 V 5.5 5.0 VCE = 5 V 4.5 4.0 3.5 TJ = 25°C ftest = 1 MHz 3.0 2.5 2.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 10 VCE = 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJW21195 NPN MJW21196 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 100 25°C -25°C TJ = 100°C 100 25°C -25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJW21195 NPN MJW21196 1000 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 10 TJ = 100°C 100 25°C -25°C TJ = 100°C 100 25°C -25°C VCE = 5 V VCE = 5 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 5 V http://onsemi.com 3 100 MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS PNP MJW21195 NPN MJW21196 30 30 25 IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 2.0 A 1.5 A 20 1.0 A 15 IB = 0.5 A 10 5.0 2.0 A 1.5 A 25 1.0 A 20 IB = 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics PNP MJW21195 NPN MJW21196 25 3.0 2.5 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.4 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 TJ = 25°C IC/IB = 10 1.2 1.0 VBE(sat) 0.8 0.6 0.4 VCE(sat) 0.2 VCE(sat) 0 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages NPN MJW21196 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) PNP MJW21195 10 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 100 10 100 10 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage http://onsemi.com 4 100 MJW21195 (PNP) MJW21196 (NPN) The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. TYPICAL CHARACTERISTICS PNP MJW21195 NPN MJW21196 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10 ms 100 ms 10 1 Sec 1 0.1 1 10 100 10 ms 1 Sec 1 0.1 1000 100 ms 10 1 10 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area 10000 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1000 Cob 1000 TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 Cob 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW21195 Typical Capacitance Figure 16. MJW21196 Typical Capacitance http://onsemi.com 5 100 MJW21195 (PNP) MJW21196 (NPN) 1.2 T , TOTAL HARMONIC HD DISTORTION (%) 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 17. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 8.0 W MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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