MMBZ5257ELT1

MMBZ5221ELT1 Series Preferred Device Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Features http://onsemi.com • • • • • • • 3 Cathode 1 Anode 225 mW Rating on FR−4 or FR−5 Board Zener Voltage Range − 2.4 V to 91 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) Pb−Free Packages are Available MARKING DIAGRAM 3 1 2 SOT−23 CASE 318 STYLE 8 1 Bxx M G G Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol Ppk PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −65 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max 225 Unit W Device Bxx xx M G = Device Code = (Refer to page 2) = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package SOT−23 Shipping † 3000/Tape & Reel MMBZ52xxELT1 MMBZ52xxELT1G MMBZ52xxELT3 MMBZ52xxELT3G SOT−23 3000/Tape & Reel (Pb−Free) SOT−23 10000/Tape & Reel SOT−23 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 August, 2005 − Rev. 6 Publication Order Number: MMBZ5221ELT1/D MMBZ5221ELT1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF VZ VR IR VF IZT V IF I Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 4) Device Marking BE2 BE7 BE9 BF1 BF2 BF3 BF4 BF6 BF7 BF8 BF9 BG2 BG3 BG5 BG6 BG7 BG8 BG9 BH2 BH4 VZ (V) Min 2.28 3.13 3.70 4.08 4.46 4.84 5.32 5.89 6.46 7.12 7.79 8.65 9.50 11.40 12.35 13.30 14.25 15.20 17.10 19.00 Nom 2.4 3.3 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 12 13 14 15 16 18 20 Max 2.52 3.47 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.55 10.50 12.60 13.65 14.70 15.75 16.80 18.90 21.00 @ IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7 6.2 Zener Impedance ZZT @ IZT W 30 28 23 22 19 17 11 7 5 6 8 10 17 30 13 15 16 17 21 25 ZZK @ IZK W 1200 1600 1900 2000 1900 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Leakage Current IR @ VR mA 100 25 10 5 5 5 5 5 3 3 3 3 3 1 0.5 0.1 0.1 0.1 0.1 0.1 V 1 1 1 1 2 2 3 4 5 6 6.5 7 8 9.1 9.9 10 11 12 14 15 Device MMBZ5221ELT1/T3, G MMBZ5226ELT1/T3, G MMBZ5228ELT1/T3, G MMBZ5229ELT1/T3, G MMBZ5230ELT1/T3, G MMBZ5231ELT1/T3,G MMBZ5232ELT1/T3,G MMBZ5234ELT1/T3,G MMBZ5235ELT1/T3,G MMBZ5236ELT1/T3, G MMBZ5237ELT1/T3, G MMBZ5239ELT1/T3, G MMBZ5240ELT1/T3,G MMBZ5242ELT1/T3,G MMBZ5243ELT1/T3, G MMBZ5244ELT1/T3, G MMBZ5245ELT1/T3,G MMBZ5246ELT1, G† MMBZ5248ELT1/T3,G MMBZ5250ELT1/T3,G 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *The “G’’ suffix indicates Pb−Free package available. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. http://onsemi.com 2 MMBZ5221ELT1 Series ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 5) Device Marking BH6 BH7 BH8 BH9 BJ1 BJ2 BJ3 BJ7 BJ8 BK1 VZ (V) Min 22.80 23.75 25.65 26.60 28.50 31.35 34.20 48.45 53.20 58.90 Nom 24 25 27 28 30 33 36 51 56 62 Max 25.20 26.25 28.35 29.40 31.50 34.65 37.80 53.55 58.80 65.10 @ IZT mA 5.2 5 4.6 4.5 4.2 3.8 3.4 2.5 2.2 2 Zener Impedance ZZT @ IZT W 33 35 41 44 49 58 70 125 150 185 ZZK @ IZK W 600 600 600 600 600 700 700 1100 1300 1400 mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Leakage Current IR @ VR mA 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 18 19 21 21 23 25 27 37 43 47 Device* MMBZ5252ELT1, G† MMBZ5253ELT1/T3 MMBZ5254ELT1/T3,G MMBZ5255ELT1/T3, G MMBZ5256ELT1/T3, G MMBZ5257ELT1/T3,G MMBZ5258ELT1/T3, G MMBZ5262ELT1/T3, G MMBZ5263ELT1/T3, G MMBZ5265ELT1, G† 5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *The “G’’ suffix indicates Pb−Free package available. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. http://onsemi.com 3 MMBZ5221ELT1 Series TYPICAL CHARACTERISTICS 8 7 6 5 4 3 2 1 0 VZ @ IZT TYPICAL TC VALUES FOR MMBZ5221BLT1 SERIES 100 θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° TYPICAL TC VALUES FOR MMBZ5221BLT1 SERIES VZ @ IZT θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° 10 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 Z ZT, DYNAMIC IMPEDANCE (Ω ) IZ = 1 mA 5 mA 20 mA 10 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 IF, FORWARD CURRENT (mA) 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 100 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 0.5 75°C 25°C 0 °C 1.1 1.2 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 3. Effect of Zener Voltage on Zener Impedance Figure 4. Typical Forward Voltage http://onsemi.com 4 MMBZ5221ELT1 Series TYPICAL CHARACTERISTICS 1000 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) 100 BIAS AT 50% OF VZ NOM 10 TA = 25°C 1000 I R , LEAKAGE CURRENT (m A) 100 10 1 0.1 +150°C 0.01 +25 °C −55 °C 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 90 0.00 1 0.0001 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 0.00001 100 0 Figure 5. Typical Capacitance 100 TA = 25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 10 10 100 Figure 6. Typical Leakage Current TA = 25°C 1 1 0.1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 12 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 tP tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms 20 40 t, TIME (ms) 60 80 Figure 9. 8 × 20 ms Pulse Waveform http://onsemi.com 5 MMBZ5221ELT1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−08 ISSUE AM D 3 SEE VIEW C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE b e q A L A1 L1 VIEW C 0.25 DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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