NRVBAF440T3G

MBRAF440, NRVBAF440 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIER 4.0 AMPERE 40 VOLTS SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAM Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements RAF AYWWG RAF A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MBRAF440T3G SMA−FL (Pb−Free) 5000 / Tape & Reel NRVBAF440T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 December, 2016 − Rev. 3 1 Publication Order Number: MBRAF440T3/D MBRAF440, NRVBAF440 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 107°C) Symbol Value Unit VRRM VRWM VR 40 V IO A 4.0 Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 100 Storage/Operating Case Temperature Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt V/ms 10,000 ESD Rating Human Body Model Machine Model ESDHBM ESDMM 3B M4 − Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 2) Symbol Value Unit RθJL RθJA 25 90 °C/W 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 4.0 A) VF Maximum Instantaneous Reverse Current IR (VR = 40 V) Value Unit TJ = 25°C TJ = 100°C 0.485 0.435 TJ = 25°C TJ = 100°C 0.3 15 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRAF440, NRVBAF440 TYPICAL CHARACTERISTICS 1 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125°C TJ = 25°C TJ = 100°C 0.1 0.10 0.30 0.20 TJ = −55°C 0.50 0.40 TJ = 125°C TJ = 100°C 0.60 0.30 0.40 0.60 0.50 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E−3 TJ = 125°C 1E−3 TJ = 100°C 100E−6 10E−6 TJ = 25°C 1E−6 TJ = 125°C 10E−3 TJ = 100°C 1E−3 TJ = 25°C 100E−6 100E−9 TJ = −55°C 10E−9 1E−9 100E−12 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 TJ = −55°C 10E−6 1E−6 0 Figure 3. Typical Reverse Current 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current 1.8 1000 1.6 SQUARE WAVE 1.4 dc 1.2 1.0 0.8 Ipk/IO = p 0.6 Ipk/IO = 5 0.4 Ipk/IO = 10 0.2 40 TJ = 25 °C C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (WATTS) 0.20 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10E−3 0 TJ = −55°C TJ = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 IR, REVERSE CURRENT (AMPS) 1 0.1 0.10 IR, MAXIMUM REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 Ipk/IO = 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 100 5 0 IO, AVERAGE FORWARD CURRENT (AMPS) 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Figure 5. Forward Power Dissipation www.onsemi.com 3 35 40 IF(AV), AVERAGE FORWARD CURRENT (A) MBRAF440, NRVBAF440 8 RqJL = 25 °C/W 7 DC 6 5 SQUARE WAVE 4 3 2 1 0 0 20 40 60 80 100 120 140 TC, LEAD TEMPERATURE (°C) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Current Derating 100 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 8. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O DATE 02 MAR 2011 SCALE 2:1 E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c 2X C SIDE VIEW MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 SEATING PLANE b 2X L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 5.56 1.76 1.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON55210E SMA−FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative