NSBA114TF3T5G

NSBA114EF3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−1123 package which is designed for low power surface mount applications. Features http://onsemi.com PNP SILICON DIGITAL TRANSISTORS PIN 3 COLLECTOR (OUTPUT) • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−1123 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices These are Halide−Free Devices PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SOT−1123 CASE 524AA STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM xM x M G or G = Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device NSBA114EFT5G Package SOT−1123 (Pb−Free) Shipping† 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 2 1 Publication Order Number: NSBA114EF3/D NSBA114EF3T5G Series THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance (Note 1) Junction-to-Ambient Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C Thermal Resistance (Note 2) Junction-to-Ambient Thermal Resistance (Note 1) Junction-to-Lead 3 Junction and Storage Temperature 1. FR−4 @ 100 2. FR−4 @ 500 mm2, mm2, 1 oz. copper traces, still air. 1 oz. copper traces, still air. Symbol PD Max 254 2.0 493 Unit mW mW/°C °C/W RqJA PD 297 2.4 421 193 − 55 to +150 mW mW/°C °C/W °C/W °C RqJA RqJL TJ, Tstg ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G NSBA114TF3T5G NSBA115TF3T5G Marking* F (0°) Y (0°) E (0°) K (0°) F (90°) A (90°) E (90°) J (90°) D (90°) L (90°) Q (90°) R1 (k) 10 22 47 10 2.2 4.7 4.7 2.2 47 10 100 R2 (k) 10 22 47 47 ∞ 4.7 47 47 22 ∞ ∞ SOT−1123 (Pb−Free) 8000 / Tape & Reel Package Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *(XX°) = Degree rotation in the clockwise direction. http://onsemi.com 2 NSBA114EF3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA123TF3T5G NSBA114TF3T5G NSBA143EF3T5G NSBA115T53T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G ICBO ICEO IEBO − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 4.0 0.9 1.5 0.1 0.18 0.2 0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA115TF3T5G/NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G NSBA114TF3T5G V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 15 80 80 80 160 − 60 100 140 140 350 27 140 140 140 250 − − − − − − − − − − − 0.25 Vdc Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G NSBA114YF3T5G/NSBA123TF3T5G/NSBA123JF3T5G NSBA144WF3T5G (IC = 10 mA, IB = 1 mA) NSBA143ZF3T5G/NSBA143EF3T5G/NSBA114TF3T5G (IC = 10 mA, IB = 5 mA) NSBA115TF3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBA114TF3T5G NSBA114EF3T5G NSBA124EF3T5G NSBA114YF3T5G NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144EF3T5G NSBA144WF3T5G NSBA115TF3T5G VCE(sat) VOL Vdc − − − − − − − − − − − 4.9 − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 − Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G NSBA114YEF3T5G/NSBA143ZF3T5G/NSBA123JF3TG NSBA144WF3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBA123TF3T5G/NSBA143EF3T5G/NSBA114TF3T5G/ NSBA115TF3T5G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% VOH http://onsemi.com 3 NSBA114EF3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Resistor NSBA114TF3T5C NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G NSBA115TF3T5G NSBA114EF3T5G/NSBA124EF3T5G/ NSBA144EF3T5G/NSBA143EF3T5G NSBA114YF3T5TG NSBA123TF3T5G/NSBA114TF3T5G/ NSBA115TF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G Symbol R1 Min 7.0 7.0 15.4 32.9 7.0 1.5 3.3 3.3 1.54 32.9 70 Typ 10 10 22 47 10 2.2 4.7 4.7 2.2 47 100 Max 13 13 28.6 61.1 13 2.9 6.1 6.1 2.86 61.1 130 Unit kW Resistor Ratio R1/R2 0.8 0.17 − 0.055 0.038 1.7 1.0 0.21 − 0.1 0.047 2.1 1.2 0.25 − 0.185 0.056 2.6 http://onsemi.com 4 NSBA114EF3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EF3T5G VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) 1.0 IC/IB = 10 TA = 25°C TA = 150°C 0.10 TA = −55°C 1000 VCE = 10 V hFE, DC CURRENT GAIN 100 150°C 25°C 10 −55°C 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1.0 0.1 Figure 1. VCE(sat) vs. IC 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. DC Current Gain 2.4 COBO, OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 10 15 20 25 30 35 40 45 50 100 10 150°C 1.0 −55°C 0.1 25°C 0.01 0 1 2 3 4 5 REVERSE BIAS VOLTAGE (V) Figure 3. Output Capacitance 10 25°C −55°C 1.0 150°C Figure 4. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) 0.1 0 5 10 15 20 25 30 35 40 45 50 Figure 5. Input Voltage vs. Output Current IC, COLLECTOR CURRENT (mA) http://onsemi.com 5 NSBA114EF3T5G Series PACKAGE DIMENSIONS SOT−1123 CASE 524AA−01 ISSUE B b1 1 2 D −X− −Y− 3 E b 0.08 (0.0032) X Y A e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b b1 c D E e HE L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.22 0.28 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 −−− 0.40 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.004 0.003 0.030 0.022 0.014 0.037 0.002 INCHES NOM 0.015 0.009 0.006 0.005 0.031 0.024 −−−− 0.039 0.004 MAX 0.016 0.011 0.008 0.007 0.033 0.026 0.016 0.041 0.006 c L HE STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.35 0.30 0.25 0.90 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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