NSV60101DMR6T1G

Low VCE(sat) NPN Transistors, 60 V, 1 A NSS60101DMR6 ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and LED lightning, power management…etc. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features 60 Volt, 1 Amp NPN Low VCE(sat) Transistors MARKING DIAGRAM SC−74 CASE 318F 6 • NSV Prefix for Automotive and Other Applications Requiring • www.onsemi.com 1 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant RAD MG G RAD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 6 IC ICM Collector Current − Continuous Collector Current − Peak E 1 6 C Vdc B 2 5 B 1 A C 3 4 E 2 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Notes 1 and 2) Total Power Dissipation per Package @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Ambient (Note 3) Power Dissipation per Transistor @ TA = 25°C (Note 3) Junction and Storage Temperature Range Symbol Max Unit RqJA 234 °C/W PD 0.53 W RqJA 300 °C/W PD 0.40 W TJ, Tstg −55 to +150 February, 2020 − Rev. 3 6 1 5 2 4 3 ORDERING INFORMATION Device Package Shipping† SC−74 (Pb−Free) 3000/Tape & Reel NSS60101DMR6T1G °C 1. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Dual Operation). 2. PD per Transistor when both are turned on is one half of Total PD or 0.53 Watts. 3. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Single−Operation). © Semiconductor Components Industries, LLC, 2017 PIN CONNECTIONS 1 NSS60101DMR6T2G NSV60101DMR6T1G NSV60101DMR6T2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS60101DMR6/D NSS60101DMR6 Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 60 V Collector−Base Breakdown Voltage (Ic = 0.1 mA, IE = 0) V(BR)CBO 80 V Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 6 Characteristic Typ Max Unit OFF CHARACTERISTICS V Collector Cutoff Current (VCB = 60 V, IE = 0) ICBO 100 nA Emitter Cutoff Current (VBE = 5.0 V) IEBO 100 nA ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 100 mA, VCE = 2 V) (IC = 500 mA, VCE = 2 V) (IC = 1 A, VCE = 2 V) (IC = 1 mA, VCE = 5 V) (IC = 100 mA, VCE = 5 V) (IC = 500 mA, VCE = 5 V) (IC = 1 A, VCE = 5 V) 200 150 70 250 250 200 100 Collector−Emitter Saturation Voltage (Note 4) (IC = 100 mA, IB = 1 mA) (IC = 500 mA, IB = 50 mA) (IC = 1 A, IB = 50 mA) (IC = 1 A, IB = 100 mA) VCE(sat) Base*Emitter Saturation Voltage (Note 4) (IC = 500 mA, IB = 50 mA) (IC = 1 A, IB = 50 mA) (IC = 1 A, IB = 100 mA) VBE(sat) Base−Emitter Turn−on Voltage (Note 4) (IC = 1 mA, VCE = 1 V) (IC = 500 mA, VCE = 2 V) VBE(on) 320 290 110 335 335 310 295 V 0.080 0.078 0.170 0.143 0.200 0.150 0.250 0.200 0.87 0.91 0.94 1.50 1.50 1.60 V V 0.27 0.57 0.76 0.90 DYNAMIC CHARACTERISTICS Input Capacitance (VEB = 1 V, f = 1.0 MHz) Cibo 100 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 8.0 pF fT 200 MHz Delay Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) td 10 ns ON Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) ton 28 ns Cutoff Frequency (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) SWITCHING TIMES Rise Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tr 18 ns Storage Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) ts 622 ns OFF Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) toff 709 ns Fall Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tf 87 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 2 NSS60101DMR6 TYPICAL CHARACTERISTICS 600 600 VCE = 2 V hFE, DC CURRENT GAIN 500 125°C 400 85°C 300 25°C 200 −55°C 100 0 0.001 0.01 IC, COLLECTOR CURRENT (A) 1.8 0.1 1 25°C 200 −55°C 100 0 0.001 0.1 1 8.0 mA 6.0 mA 0.6 2.0 mA 0.4 0.2 1 2 3 4 10 10 IB = 20 mA 0.8 5 IC/IB = 10 1 150°C 125°C 85°C 0.1 25°C −55°C 0.01 0.001 6 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 3. Collector Current as a Function of Collector Emitter Voltage Figure 4. Collector−Emitter Saturation Voltage 10 10 IC/IB = 20 VCE(sat), COLLECTOR−EMITTER SATURATION (V) VCE(sat), COLLECTOR−EMITTER SATURATION (V) 0.01 Figure 2. DC Current Gain 4.0 mA 0 300 Figure 1. DC Current Gain 1.0 0 85°C IC, COLLECTOR CURRENT (A) 10 mA 1.2 125°C 400 10 12 mA 1.4 500 IC, COLLECTOR CURRENT (A) 18 mA 14 mA 16 mA 1.6 VCE = 5 V 150°C VCE(sat), COLLECTOR−EMITTER SATURATION (V) hFE, DC CURRENT GAIN 150°C 150°C 1 125°C 85°C 0.1 −55°C 0.01 0.001 0.01 0.1 25°C 1 IC/IB = 50 150°C 1 125°C 85°C 0.1 −55°C 0.01 0.001 10 IC, COLLECTOR CURRENT (A) 0.01 0.1 25°C 1 10 IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage Figure 6. Collector−Emitter Saturation Voltage www.onsemi.com 3 NSS60101DMR6 TYPICAL CHARACTERISTICS IC/IB = 100 VBE(sat), BASE−EMITTER SATURATION (V) VCE(sat), COLLECTOR−EMITTER SATURATION (V) 10 1 125°C 150°C −55°C 0.1 85°C 25°C 1.0 −55°C 25°C 85°C 125°C 0.5 150°C IC/IB = 10 0.01 0.001 0.01 0.1 1 0 10 0.001 0.01 IC, COLLECTOR CURRENT (A) 1.0 −55°C 25°C 85°C 125°C 150°C IC/IB = 20 0 0.001 0.01 0.1 10 1 1.2 1.0 0.8 −55°C 25°C 0.6 85°C 125°C 0.4 150°C 0.2 0 VCE = 2 V 0.001 0.01 1 10 Figure 10. Base−Emitter “ON” Voltage Figure 9. Base−Emitter Saturation Voltage 40 240 TA = 25°C f = 1 MHz 200 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 120 80 40 10 Figure 8. Base−Emitter Saturation Voltage VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION (V) Figure 7. Collector−Emitter Saturation Voltage 0.5 1 0.1 IC, COLLECTOR CURRENT (A) 0 1 2 3 4 5 6 30 25 20 15 10 5 0 7 TA = 25°C f = 1 MHz 35 0 5 10 15 20 25 VEB, BASE−EMITTER VOLTAGE (V) VCB, COLLECTOR−BASE REVERSE VOLTAGE (V) Figure 11. Input Capacitance Figure 12. Output Capacitance www.onsemi.com 4 30 NSS60101DMR6 10 1000 TJ = 25°C VCE = 2 V ftest = 100 MHz IC, COLLECTOR CURRENT (A) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS 100 10 1 1 10 100 1s 10 ms 1 ms 1 0.01 0.001 0.1 1000 100ms 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 13. fT, Current Gain Bandwidth Product Figure 16. Safe Operating Area (TA = 255C) R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1000 Duty Cycle = 0.5 100 0.20 0.10 0.05 10 0.02 0.01 1 Single Pulse 0.1 0.00001 0.000001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (sec) Figure 14. Thermal Resistance by Transistor R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1000 Duty Cycle = 0.5 100 0.20 0.10 0.05 10 0.02 0.01 1 0.1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 15. Thermal Resistance for Both Transistors www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N 6 DATE 08 JUN 2012 1 SCALE 2:1 D 6 HE 1 5 4 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. E b e c A 0.05 (0.002) L A1 q DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0° 0.85 0.20 2.50 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 10° 0.95 1.05 0.40 0.60 2.75 3.00 − INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 10° 0.041 0.024 0.118 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 2.4 0.094 XXX MG G 0.95 0.037 1.9 0.074 XXX M G 0.95 0.037 0.7 0.028 1.0 0.039 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0° 0.034 0.008 0.099 SCALE 10:1 = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. 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