NTJS3151PT2G

NTJS3151P, NVJS3151P MOSFET – Power, Single, P-Channel, Trench, ESD Protected, SC-88 12 V, 3.3 A www.onsemi.com Features • • • • • Leading Trench Technology for Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS −12 V Gate−to−Source Voltage VGS ±12 V ID −2.7 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25 °C TA = 85 °C −2.0 t≤5s TA = 25 °C −3.3 Steady State TA = 25 °C PD 0.625 W tp = 10 ms IDM −8.0 A TJ, TSTG −55 to 150 °C IS −0.8 A TL 260 °C Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) RDS(on) Typ ID Max 45 mW @ −4.5 V −12 V −3.3 A 67 mW @ −2.5 V 133 mW @ −1.8 V SC−88 (SOT−363) D 1 6 D D 2 5 D G 3 4 S Top View D 3 kW G THERMAL RESISTANCE RATINGS (Note 1) Parameter V(BR)DSS Symbol Max Units Junction−to−Ambient – Steady State RqJA 200 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 141 Junction−to−Lead – Steady State RqJL 102 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). S MARKING DIAGRAM & PIN ASSIGNMENT D 1 SC−88/SOT−363 CASE 419B STYLE 28 S 6 XXX MG G 1 D XXX M G D D G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2016 May, 2019 − Rev. 4 1 Publication Order Number: NTJS3151/D NTJS3151P, NVJS3151P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −12 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS V 10 VGS = −9.6 V, VDS = 0 V TJ = 25°C mV/°C −1.0 TJ = 125°C mA −2.5 VDS = 0 V, VGS = ±4.5 V ±1.5 mA VDS = 0 V, VGS = ±12 V ±10 mA −1.2 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS VGS = VDS, ID = 100 mA −0.40 3.4 mV/°C VGS = −4.5 V, ID = −3.3 A 45 60 VGS = −2.5 V, ID = −2.9 A 67 90 VGS = −1.8 V, ID = −1.0 A 133 160 VGS = −10 V, ID = −3.3 A 15 S 850 pF mW CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = −12 V QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Resistance 170 110 nC 8.6 VGS = −4.5 V, VDS = −5.0 V, ID = −3.3 A 1.3 2.2 RG 3000 W td(ON) 0.86 ms SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = −4.5 V, VDD = −6.0 V, ID = −1.0 A, RG = 6.0 W tf 1.5 3.5 3.9 DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage VSD VGS = 0 V, IS = −3.3 A TJ = 25°C −0.85 TJ = 125°C −0.7 −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTJS3151P, NVJS3151P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 TJ = 25°C VGS = −4.5 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 8 VGS = −3.4 V 6 −2 V −2.4 V 4 2 −1.6 V 0 −1.4 V −1.2 V 1 0 2 4 3 VDS ≤ −12 V 6 4 125°C 2 25°C TJ = −55°C 0 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.1 VGS = −4.5 V 0.075 TJ = 125°C 0.05 TJ = 25°C TJ = −55°C 0.025 0 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 −ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.5 0.4 0.3 0.2 0 0.5 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 −50 −25 0 25 50 75 100 125 1.5 2.5 3.5 4.5 5.5 6.5 7.5 −ID, DRAIN CURRENT (AMPS) 100000 ID = −3.3 A VGS = −4.5 V VGS = −4.5 V Figure 4. On−Resistance vs. Drain Current and Gate Voltage −IDSS, LEAKAGE CURRENT (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 VGS = −2.5 V 0.1 Figure 3. On−Resistance vs. Drain Current and Temperature 2.0 TJ = 25°C VGS = −1.8 V 150 VGS = 0 V 10000 TJ = 150°C 1000 TJ = 125°C 100 TJ, JUNCTION TEMPERATURE (°C) 2 8 4 6 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage 0 www.onsemi.com 3 12 NTJS3151P, NVJS3151P 1600 TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 1400 1200 1000 Ciss 800 600 400 Coss 200 0 Crss 0 4 2 6 8 12 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4.5 QT 4 3.5 3 2.5 Q1 2 1.5 1 ID = −3.3 A TJ = 25°C 0.5 0 2 0 Figure 7. Capacitance Variation 8 4 6 Qg, TOTAL GATE CHARGE (nC) 10 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge 10000 −IS, SOURCE CURRENT (AMPS) 4 tf td(off) t, TIME (ns) Q2 tr 1000 td(on) VDD = −6.0 V ID = −1.0 A VGS = −4.5 V 100 1 10 VGS = 0 V TJ = 25°C 3 2 1 0 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current ORDERING INFORMATION Device Marking NTJS3151PT1G TJ NTJS3151PT2G TJ NVJS3151PT1G* VTJ Package Shipping† SC−88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative