NTMFS4837NT3G

NTMFS4837N Power MOSFET 30 V, 74 A, Single N−Channel, SO−8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com Applications • • • • V(BR)DSS Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters Low Side Switching RDS(ON) MAX 30 V D (5,6) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 16 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.2 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 10 A Power Dissipation RqJA (Note 2) TA = 85°C Steady State Continuous Drain Current RqJC (Note 1) TA = 25°C TC = 25°C S (1,2,3) PD ID 0.88 53 47.2 W TA = 25°C IDM 148 A TJ, TSTG −55 to +150 °C IS 39 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IL = 22 Apk, L = 1.0 mH, RG = 25 W) EAS 242 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL Operating Junction and Storage Temperature Source Current (Body Diode) 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 6 D 1 S S S G 1 A 74 PD tp=10ms MARKING DIAGRAM W TC = 25°C Pulsed Drain Current N−CHANNEL MOSFET 7 TC = 85°C Power Dissipation RqJC (Note 1) G (4) 11.5 TA = 85°C 74 A 7.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter ID MAX 5.0 mW @ 10 V SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ 4837N AYWZZ D D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† NTMFS4837NT1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4837NT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4837N/D NTMFS4837N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 2.65 Junction−to−Ambient – Steady State (Note 1) RqJA 56.75 Junction−to−Ambient – Steady State (Note 2) RqJA 142.2 Unit °C/W 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 25 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) 1.5 5.7 VGS = 10 V to 11.5 V ID = 30 A 3.5 ID = 15 A 3.5 VGS = 4.5 V ID = 30 A 5.9 ID = 15 A 5.9 gFS VDS = 15 V, ID = 15 A mV/°C 5.0 7.5 15 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 239 Total Gate Charge QG(TOT) 14.2 Threshold Gate Charge QG(TH) 2.98 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 2048 VGS = 0 V, f = 1 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 444 5.7 pF 22 nC 6.7 QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 15 A 34.2 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 14.2 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 55 19 tf 10 td(ON) 8.5 tr td(OFF) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 25.6 25.2 9.2 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns ns NTMFS4837N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C 0.85 1.2 TJ = 125°C 0.72 Unit DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time Charge Time VGS = 0 V, IS = 30 A tRR 24 ta Discharge Time 13 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A tb Reverse Recovery Charge V ns 11 QRR 14 nC Source Inductance LS 0.93 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES 0.005 TA = 25°C 1.84 2.8 W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 100 VGS = 10 V to 4.5 V 100 TJ = 25°C 80 4V 70 3.8 V 60 50 3.6 V 40 30 3.4 V 20 3.2 V 10 0 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS ≥ 10 V 90 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 90 80 70 60 TJ = −55°C 50 40 TJ = 25°C 30 TJ = 125°C 20 10 0 5 1 2 T = 25°C ID = 30 A RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 3.0 8 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 0.016 0.015 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.01 TJ = 25°C 0.009 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 11.5 V 0.004 0.003 0.002 0.001 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 11 11.5 0 10 Figure 3. On−Resistance vs. VGS 20 40 60 30 50 70 ID, DRAIN CURRENT (A) 80 90 Figure 4. On−Resistance vs. Drain Current & Gate Voltage http://onsemi.com 3 1.80 100000 ID = 30 A VGS = 10 V & 4.5 V 1.60 VGS = 0 V TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) NTMFS4837N 1.40 1.20 1.00 1000 TJ = 125°C 100 10 1 0.80 0.60 −50 −25 0 25 50 75 100 0 150 125 TJ = 25°C 5 10 20 30 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature 3000 15 Figure 6. Drain−to−Source Leakage Current vs. Voltage 12 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C QT C, CAPACITANCE (pF) 10 CISS 2000 1000 COSS CRSS 0 10 5 0 5 10 15 20 8 6 Qgd 4 2 0 25 0 5 Figure 7. Capacitance Variation IS, SOURCE CURRENT (A) t, TIME (ns) td(off) tr tf td(on) 1 20 25 30 30 100 1 15 Figure 8. Gate−to−Source & Drain−to−Source Voltage vs. Total Charge VDD = 15 V ID = 15 A VGS = 11.5 V 10 10 QG, TOTAL GATE CHARGE (nC) VGS VDS VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 VDD = 15.0 V VGS = 11.5 V ID = 30 A TJ = 25°C Qgs 10 VGS = 0 V TJ = 25°C 25 20 15 10 5 0 0.50 100 RG, GATE RESISTANCE (W) 0.60 0.80 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current Figure 9. Resistive Switching Time Variation vs. Gate Resistance http://onsemi.com 4 35 ID, DRAIN CURRENT (A) 1000 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) NTMFS4837N VGS = 20 V Single Pulse TC = 25°C 100 10 ms 100 ms 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 10 ms dc 100 ms 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 250 ID = 22 A 225 200 175 150 125 100 75 50 25 0 25 50 75 Figure 11. Maximum Rated Forward−Biased Safe Operating Range 25°C 100°C ID (A) 125°C 10 1 125 Figure 12. Maximum Avalanche Energy vs, Starting Junction Temperature 100 1 100 TJ, STARTING JUNCTION TEMPERATURE (°C) 10 100 PULSE WIDTH (ms) Figure 13. EAS vs. Pulse Width http://onsemi.com 5 1000 150 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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