NTMFS4943N

NTMFS4943N Power MOSFET Features 30 V, 41 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 7.2 mW @ 10 V 11 mW @ 4.5 V D (5,6) ID MAX 41 A Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmax TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 14 8.7 2.6 23 14.3 6.83 W W A Unit V V A G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 8.3 5.2 0.91 41 26 22.3 125 100 −55 to +150 20 8.0 31 A W A SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4943N AYWWG G D D D W A A °C A V/ns mJ A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT ORDERING INFORMATION Device NTMFS4943NT1G NTMFS4943NT3G Package SO−8 FL (Pb−Free) SO−8 FL (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 25 Apk, L = 0.1 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 1 1 Publication Order Number: NTMFS4943N/D NTMFS4943N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ 10 s) (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA RqJA Value 5.6 49.1 137.2 18.3 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V VGS = 4.5 V Forward Transconductance gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 10 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 15 V ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 1.5 V, ID = 15 A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 11 31 18 3.0 ns 1401 446 16 9.2 2.7 4.4 1.9 20.9 nC nC pF VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = 250 mA 30 15 1.0 10 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.2 1.66 4.0 5.8 5.8 8.2 8.2 32 2.2 V mV/°C 7.2 mW 11 S 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4943N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LG RG TA = 25°C VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25°C TJ = 125°C 0.9 0.8 23 12.5 10.5 10 nC ns 1.1 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 8.0 21 21 2.1 ns Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 0.93 0.005 1.84 1.1 2.0 nH nH nH W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4943N TYPICAL CHARACTERISTICS 80 70 ID, DRAIN CURRENT (A) 80 3.8 V ID, DRAIN CURRENT (A) 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 2.4 V 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 70 60 50 40 30 20 10 0 1.0 1.5 TJ = 125°C TJ = −55°C 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C VDS = 10 V 10 V 7V 4.2 V 4.0 V TJ = 25°C 60 4.5 V 50 40 30 20 10 0 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 3.0 4.0 5.0 6.0 7.0 8.0 9.0 ID = 30 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 20 Figure 2. Transfer Characteristics TJ = 25°C VGS = 4.5 V VGS = 10 V 10 30 40 50 60 70 80 VGS (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS 1.9 1.8 ID = 30 A 1.7 VGS = 10 V 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 −25 0 10,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) IDSS, LEAKAGE (nA) 1000 TJ = 125°C 100 TJ = 85°C 25 50 75 100 125 150 10 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTMFS4943N TYPICAL CHARACTERISTICS 1800 1600 C, CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0 5 10 Crss 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Coss Ciss VGS = 0 V TJ = 25°C 11 10 9 8 7 6 5 4 3 2 1 0 Qgs Qgd VDD = 15 V VGS = 10 V ID = 30 A 4 6 8 10 12 14 16 18 20 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) QT 0 2 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = 15 V ID = 15 A VGS = 10 V t, TIME (ns) 100 30 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 0 V 25 20 15 10 5 0 0.4 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 td(off) tf tr td(on) TJ = 125°C 10 1 1 10 RG, GATE RESISTANCE (W) 100 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance VGS = 20 V Single Pulse TC = 25°C EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 35 30 25 20 15 10 5 0 Figure 10. Diode Forward Voltage vs. Current ID = 25 A ID, DRAIN CURRENT (A) 100 10 100 ms 1 ms 1 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 dc 0.1 100 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTMFS4943N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) 0.1 1 10 100 1000 10 R(t) (°C/W) 1 Figure 13. Thermal Response 70 60 50 GFS (S) 40 30 20 10 0 0 10 20 30 40 ID (A) 50 60 70 80 Figure 14. GFS vs. ID http://onsemi.com 6 NTMFS4943N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO8 FL) CASE 488AA−01 ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 D1 A B 2X 0.20 C E1 2 E c 4X q A1 1 2 3 4 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ SOLDERING FOOTPRINT* DETAIL A 1.270 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 3X b e/2 1 4 0.750 4X 1.000 4X 0.10 0.05 CAB c L 0.965 1.330 0.495 2X K E2 L1 0.905 4.530 0.475 2X 2X PIN 5 (EXPOSED PAD) M 3.200 G D2 BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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