NTMFS4985NF
MOSFET – Power, Single,
N-Channel, SO-8 FL
30 V, 65 A
Features
•
•
•
•
•
http://onsemi.com
Integrated Schottky Diode
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(ON) MAX
ID MAX
3.4 mW @ 10 V
30 V
65 A
5.0 mW @ 4.5 V
Applications
•
•
•
•
CPU Power Delivery
Synchronous Rectification for DC−DC Converters
Low Side Switching
Telecom Secondary Side Rectification
N−CHANNEL MOSFET
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
23.9
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
Current RqJA
(Note 2)
TA = 85°C
PD
ID
3.04
A
36
26
TA = 25°C
PD
7.0
W
TA = 25°C
ID
17.5
A
TA = 85°C
12.6
TA = 25°C
PD
1.63
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
65
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
22.73
W
TA = 25°C
IDM
195
A
TA = 25°C
IDmaxpkg
100
A
TJ,
TSTG
−55 to
+150
°C
IS
64
A
dV/dt
6
V/ns
TC = 85°C
tp=10ms
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
(1, 2, 3)
MARKING
DIAGRAM
W
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
S
(4)
17.2
TA = 85°C
Steady
State
(5, 6)
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
D
47
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4895NF
A
Y
W
ZZ
S
S
S
G
D
4985NF
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4985NFT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4985NFT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
May, 2019 − Rev. 2
1
Publication Order Number:
NTMFS4985NF/D
NTMFS4985NF
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, IL = 33 Apk,
L = 0.1 mH, RG = 25 W)
EAS
54
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
2
NTMFS4985NF
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.5
Junction−to−Ambient – Steady State (Note 1)
RqJA
41.15
Junction−to−Ambient – Steady State (Note 2)
RqJA
76.9
Junction−to−Ambient − t v 10 sec
RqJA
17.86
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
30
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1.0 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 10 mA, referenced to 25°C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VGS = 0 V,
VDS = 24 V
V
15
TJ = 25°C
mV/°C
500
VDS = 0 V, VGS = ±20 V
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS = VDS, ID = 1.0 mA
VGS(TH)/TJ
ID = 10 mA, referenced to 25°C
RDS(on)
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
gFS
1.2
1.6
ID = 30 A
2.7
ID = 15 A
2.7
ID = 30 A
4.0
ID = 15 A
4.0
VDS = 1.5 V, ID = 15 A
2.3
5.0
43
V
mV/°C
3.4
5.0
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
60
Total Gate Charge
QG(TOT)
14.2
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
2100
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
900
1.8
5.9
pF
nC
4.2
QG(TOT)
VGS = 10 V, VDS = 15 V,
ID = 30 A
30.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
11
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
32
21
6.0
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
ns
NTMFS4985NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.5
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26.5
ns
26
4.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.4
TJ = 125°C
0.33
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 2 A
0.7
V
36.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2 A
18
ns
18.5
QRR
32
nC
Source Inductance
LS
0.65
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.20
1.5
1.0
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
4
W
NTMFS4985NF
TYPICAL PERFORMANCE CURVES
110
4.0 V
4.2 V
120
105
3.6 V
4.4 V to 4.5 V
90
3.4 V
3.2 V
75
7.5 V to 10 V
60
3.0 V
45
2.8 V
30
2.6 V
15
2.4 V
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.030
ID = 30 A
TJ = 25°C
0.025
80
70
60
50
TJ = 125°C
40
30
TJ = 25°C
20
TJ = −55°C
0
5
1
1.5
2
2.5
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
5.25E−03
5.00E−03
TJ = 25°C
4.75E−03
4.50E−03
0.020
4
Figure 2. Transfer Characteristics
VGS = 4.5 V
4.25E−03
4.00E−03
0.015
0.010
0.005
0
2.0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
3.75E−03
3.50E−03
3.25E−03
3.00E−03
VGS = 10 V
2.75E−03
2.50E−03
2.25E−03
5
20
35
50
65
80
95
110 125 140 155
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.00E−01
ID = 20 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1.00E−02
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
90
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
135
VDS = 5 V
100
VGS = 3.8 V
ID, DRAIN CURRENT (A)
150
TJ = 125°C
1.00E−03
1.00E−04
TJ = 25°C
50
25
0
25
50
75
100
125
150
1.00E−05
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
5
25
NTMFS4985NF
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL PERFORMANCE CURVES
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
0
5
10
15
20
25
30
ID = 30 A
TJ = 25°C
VDD = 15 V
VGS = 10 V
2
0
0
4
8
12
16
20
24
28
32
10.0
9.0
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
tf
tr
td(on)
10
1
1
10
100
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
100 ms
10
1 ms
10 ms
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
VGS = 0 V
TJ = 25°C
8.0
RG, GATE RESISTANCE (W)
1
dc
10
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
Qgs
4
Figure 7. Capacitance Variation
100
0.01
6
QG, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 10 A
VGS = 10 V
100
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1000
QT
10
100
60
ID = 33 A
55
50
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
6
150
NTMFS4985NF
TYPICAL PERFORMANCE CURVES
100
D = 0.5
r(t)
(°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Figure 13. Thermal Response
http://onsemi.com
7
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative