NTMFS6B03NT3G

MOSFET – Power, Single, N-Channel 100 V, 4.8 mW, 132 A NTMFS6B03N Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 100 V 4.8 mW @ 10 V 132 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V ID 132 A Parameter Continuous Drain Current RqJC (Notes 1, 2, 3) TC = 25°C Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State W 165 ID PD D 1.4 470 A TJ, Tstg −55 to + 150 °C IS 160 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 60 A) EAS 180 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) MARKING DIAGRAM W 3.4 IDM Operating Junction and Storage Temperature N−CHANNEL MOSFET A 19 12 TA = 100°C TA = 25°C, tp = 10 ms S (1,2,3) 65 TA = 100°C TA = 25°C G (4) 83 PD D (5) DFN5 (SO−8FL) CASE 506EZ 1 S S S G D 6B03N AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case − Steady State Junction−to−Ambient − Steady State (Note 2) Symbol Value Unit RqJC 0.76 °C/W RqJA 38 See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2015 April, 2021 − Rev. 2 1 Publication Order Number: NTMFS6B03N/D NTMFS6B03N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 67.3 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) 2.0 4.0 −8.1 V mV/°C VGS = 10 V ID = 20 A 3.8 4.8 VGS = 6.0 V ID = 10 A 6.0 7.8 mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 4200 Output Capacitance COSS Reverse Transfer Capacitance CRSS 31 Total Gate Charge QG(TOT) 58 Threshold Gate Charge QG(TH) 6.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 17 Plateau Voltage VGP 5.4 V Gate Resistance RG 1.0 W VGS = 0 V, f = 1 MHz, VDS = 50 V VGS = 10 V, VDS = 50 V; ID = 50 A TJ = 25 °C 760 pF nC 19 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 16 VGS = 10 V, VDS = 50 V, ID = 50 A, RG = 1.0 W tf 46 ns 29 11 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.9 TJ = 125°C 0.8 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 67 VGS = 0 V, dIS/dt = 100 A/ms, IS = 25 A QRR 35 ns 31 120 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS6B03N TYPICAL CHARACTERISTICS 140 120 ID, DRAIN CURRENT (A) 5.5 V 100 80 5.0 V 60 40 4.5 V 0 4.0 V 100 80 60 TJ = 125°C 40 0.5 0 2.0 1.5 1.0 2.5 0 3.0 TJ = 25°C TJ = −55°C 0 5 Figure 2. Transfer Characteristics 9 8 7 6 5 4 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE VOLTAGE (V) 6 8.0 7.5 TJ = 25°C 7.0 6.5 VGS = 6.0 V 6.0 5.5 5.0 4.5 VGS = 10 V 4.0 3.5 3.0 10 15 20 25 35 30 40 45 50 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K 2.2 ID = 20 A VGS = 10 V TJ = 150°C 10K IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4 Figure 1. On−Region Characteristics ID = 20 A TJ = 25°C 1.8 3 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 2.0 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 11 3 VDS ≤ 10 V 20 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 120 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 140 VGS = 6 V to 10 V 1.6 1.4 1.2 1.0 0.8 TJ = 125°C 1K 100 TJ = 25°C 10 0.6 0.4 −50 −25 0 25 50 75 100 125 150 1 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMFS6B03N 10,000 Ciss 1000 Crss 100 VGS = 0 V TJ = 25°C f = 1 MHz 10 1 100 12 QT 10 8 Qgd Qgs 6 4 TJ = 25°C VDS = 50 V ID = 50 A 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 200 1000 t, TIME (ns) 10 VDS = 50 V ID = 50 A VGS = 10 V 100 td(on) tr 10 180 td(off) IS, SOURCE CURRENT (A) 1 tf TJ = 25°C 160 140 120 100 80 60 40 20 1 1 10 0 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) Coss VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 100 VGS ≤ 10 V Single Pulse TC = 25°C 500 ms 10 1 ms 1 0.01 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 NTMFS6B03N TYPICAL CHARACTERISTICS 100 120 IPEAK, DRAIN CURRENT (A) GFS, SMALL−SIGNAL FORWARD TRANSFER CONDUCTANCE (S) 140 100 80 60 40 20 0 0 40 20 60 80 100 120 140 25°C 10 1 100°C 100E−6 1E−3 10E−3 ID, DRAIN CURRENT (A) TAV, TIME IN AVALANCHE (sec) Figure 12. GFS vs. ID Figure 13. IPEAK vs. TAV 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 NTMFS6B03N, 650 mm2, 2 oz, Cu Single Layer Pad 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 14. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NTMFS6B03NT1G 6B03N DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS6B03NT3G 6B03N DFN5 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS6B03N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE O q q www.onsemi.com 6 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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