NTMFS6H858NT1G

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 80 V 20.7 mW @ 10 V 32 A 80 V, 20.7 mW, 32 A D (5,6) NTMFS6H858N Features • • • • G (4) Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 29 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current 21 PD TC = 100°C TA = 25°C Steady State W 42 MARKING DIAGRAM 21 ID TA = 100°C TA = 25°C PD 1.8 D 6H858N AYWZZ D D 137 A TJ, Tstg −55 to +175 °C IS 35 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.5 A) EAS 151 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) S S S G W 3.5 IDM Operating Junction and Storage Temperature Range D A 8.4 6.0 TA = 100°C TA = 25°C, tp = 10 ms 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 3.5 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 42.5 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 September, 2023 − Rev. 3 1 Publication Order Number: NTMFS6H858N/D NTMFS6H858N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 44 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 30 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance 2.0 4.0 −7.5 RDS(on) VGS = 10 V ID = 5 A 16.9 20.7 RDS(on) VGS = 6 V ID = 5 A 25.3 34.2 gFS VDS =15 V, ID = 10 A V mV/°C 36 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 510 VGS = 0 V, f = 1 MHz, VDS = 40 V 80 pF 4.7 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 40 V; ID = 10 A Threshold Gate Charge QG(TH) 2.2 Gate−to−Source Charge QGS 2.8 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.8 td(ON) 8.0 VGS = 10 V, VDS = 40 V; ID = 10 A 8.9 nC 1.7 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 64 V, ID = 10 A, RG = 2.5 W tf 17 ns 19 13 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 5 A 1.2 V 29 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 19 ns 9.0 23 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS6H858N TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 150 120 90 60 6V 30 5V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 180 VGS = 10 V 4V 0 1 2 3 5 4 6 7 TJ = 25°C 120 90 60 30 TJ = 125°C 0 TJ = −55°C 4 5 6 7 8 Figure 2. Transfer Characteristics 20 15 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 9 30 TJ = 25°C VGS = 6 V 26 22 18 VGS = 10 V 14 10 1 2 3 5 4 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K VGS = 10 V ID = 5 A TJ = 175°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3 Figure 1. On−Region Characteristics 25 2.0 2 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 5 A 2.5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 30 10 150 0 8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 180 1.5 1.0 10K TJ = 150°C TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 0.5 0 −50 −25 0 25 50 75 100 125 150 175 1 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMFS6H858N C, CAPACITANCE (pF) 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS CISS 100 COSS 10 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 1 10 0 20 30 40 50 60 70 80 10 9 8 7 6 QGS QGD 5 4 3 VDS = 40 V TJ = 25°C ID = 10 A 2 1 0 0 1 3 2 4 5 6 7 8 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 100 10 10 VGS = 0 V 1 ID, DRAIN CURRENT(A) 1000 100 IS, SOURCE CURRENT (A) tf 10 td(on) VGS = 10 V VDS = 64 V ID = 10 A 1 10 1 TJ = 125°C 0.1 100 0.3 0.4 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25°C Single Pulse VGS ≤ 10 V 1 ms 0.5 ms TJ(initial) = 25°C 10 10 ms 10 ms 10 TJ(initial) = 100°C 1 1 0.1 0.5 TJ = 25°C RG, GATE RESISTANCE (W) IPEAK (A) t, TIME (ns) td(off) tr RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 1000 0.1 1E−05 1E−04 1E−03 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NTMFS6H858N TYPICAL CHARACTERISTICS 100 RqJA(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 50% Duty Cycle 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 TA = 25°C 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Thermal Response RqJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 10 50% Duty Cycle 1 20% 10% 5% 2% 0.1 1% Single Pulse TC = 25°C 0.01 0.000001 0.0001 0.0001 0.001 0.01 1 0.1 t, RECTANGULAR PULSE DURATION (s) Figure 14. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS6H858NT1G 6H858N DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* E2 L1 M 2X 0.495 4.560 2X 1.530 G D2 BOTTOM VIEW 2X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales