NTTFS4C02NTAG

NTTFS4C02N MOSFET – Power, Single, N-Channel, m8FL 30 V, 170 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX 2.25 mW @ 10 V 30 V Applications N−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter D (5−8) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 29 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.7 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 36 A Continuous Drain Current RqJA (Note 2) TA = 85°C G (4) 21 S (1,2,3) MARKING DIAGRAM TA = 85°C Steady State 26 TA = 25°C PD 4.2 W TA = 25°C ID 16 A TA = 85°C 12 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.83 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 170 A Power Dissipation RqJC (Note 1) TC = 25°C PD 91 W TA = 25°C, tp = 10 ms IDM 500 A TJ, Tstg −55 to +150 °C IS 100 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (IL = 37 Apk) (Note 3) EAS 162 mJ TL 260 °C Pulsed Drain Current 170 A 3.1 mW @ 4.5 V • DC−DC Converters • Power Load Switch • Notebook Battery Management Power Dissipation RqJA ≤ 10 s (Note 1) ID MAX TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 1 WDFN8 (m8FL) CASE 511AB 4C02 A Y WW G 1 S S S G 4C02 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 120 ORDERING INFORMATION Device Package Shipping† NTTFS4C02NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. © Semiconductor Components Industries, LLC, 2016 June, 2019 − Rev. 7 1 Publication Order Number: NTTFS4C02N/D NTTFS4C02N 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 36 A, EAS = 65 mJ. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction−to−Case (Drain) RqJC 1.4 Junction−to−Ambient – Steady State (Note 4) RqJA 46 Junction−to−Ambient – Steady State (Note 5) RqJA 150 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 30 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS V 13.8 VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 30 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 TJ = 25°C 10 Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA mA 100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS Gate Resistance 1.3 1.6 5.0 mV/°C VGS = 10 V ID = 20 A 1.9 2.25 VGS = 4.5 V ID = 20 A 2.7 3.1 VDS = 1.5 V, ID = 50 A mW 140 S RG 0.9 W Input Capacitance CISS 2980 Output Capacitance COSS CHARGES AND CAPACITANCES VGS = 0 V, f = 1 MHz, VDS = 15 V 1200 pF Reverse Transfer Capacitance CRSS Output Charge QOSS VGS = 0 V, VDD = 15 V 25 Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.018 Total Gate Charge QG(TOT) 20 Threshold Gate Charge QG(TH) 4.7 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 4 Gate Plateau Voltage VGP 2.8 V 45 nC Total Gate Charge 55 VGS = 4.5 V, VDS = 15 V; ID = 50 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 50 A SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 8.5 nC nC NTTFS4C02N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 12 VGS = 4.5 V, VDS = 15 V, ID = 50 A, RG = 3.0 W tf 116 10 td(ON) 9 tr 102 td(OFF) ns 25 VGS = 10 V, VDS = 15 V, ID = 50 A, RG = 3.0 W tf ns 33 6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.1 V 42 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 21 ns 21 28 nC 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTTFS4C02N TYPICAL CHARACTERISTICS 160 3.4 V to 10 V 160 3.2 V ID, DRAIN CURRENT (A) 140 120 3.0 V 100 80 2.8 V 60 40 2.6 V 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 120 100 80 60 TJ = 25°C 40 0 5.0 TJ = 125°C 2.0 TJ = −55°C 2.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 20 A 5 4 3 2 1 0 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.5 3.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.5 TJ = 25°C VGS = 4.5 V 3.0 2.5 VGS = 10 V 2.0 1.5 1.0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2 100K VGS = 10 V ID = 20 A 1.8 TJ = 150°C 1.6 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.5 1.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6 3 VDS = 10 V 20 VGS = 2.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 140 1.4 1.2 1 0.8 10K TJ = 125°C 1K TJ = 85°C 100 0.6 10 0.4 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTTFS4C02N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS 1K COSS 100 CRSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 5 15 25 20 30 6 5 4 QGS 3 QGD 2 VDS = 15 V TJ = 25°C ID = 50 A 1 0 4 2 0 6 8 12 10 16 14 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1K 20 18 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 td(off) td(on) 10 VGS = 4.5 V VDS = 15 V ID = 50 A tf 1 1K ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) tr 100 100 1 10 100 TJ = 125°C 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1K TC = 25°C VGS ≤ 10 V Single Pulse TJ (initial) = 25°C 100 100 ms 10 DC 1 1 ms 10 ms 0.01 0.1 1 10 TJ (initial) = 100°C 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 10 1 IPEAK, (A) t, TIME (ns) VGS = 0 V 0.1 10 100 0.000001 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 5 0.01 NTTFS4C02N TYPICAL CHARACTERISTICS 10 50% Duty Cycle R(t) (°C/W) 20% 1 10% 5% 2% 0.1 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 13. Thermal Characteristics www.onsemi.com 6 0.1 1 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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