SBRD8360G-VF01

Switch-mode Power Rectifiers DPAK Surface Mount Package MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G www.onsemi.com These state−of−the−art devices are designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 20 − 60 VOLTS Features • • • • • Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings NRVBD and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK CASE 369C 1 4 3 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes; 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B MARKING DIAGRAM AYWW B 3x0G A Y WW B3x0 x G = Assembly Location* = Year = Work Week = Device Code = 2, 3, 4, 5, or 6 = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2016 August, 2020 − Rev. 11 1 Publication Order Number: MBRD320/D MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G MAXIMUM RATINGS Rating Symbol MBRD/SBRD8 320 330 340 350 360 20 30 40 50 60 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V Average Rectified Forward Current (TC = +125°C) IF(AV) 3 A Peak Repetitive Forward Current, TC = +125°C (Square Wave, Duty = 0.5) IFRM 6 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 ms, 1 kHz) IRRM 1 A Operating Junction Temperature Range (Note 1) TJ −65 to +175 °C Storage Temperature Range Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 6 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W Symbol Value Unit 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, TC = +25°C iF = 3 Amps, TC = +125°C iF = 6 Amps, TC = +25°C iF = 6 Amps, TC = +125°C VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = +25°C) (Rated dc Voltage, TC = +125°C) iR 0.6 0.45 0.7 0.625 0.2 20 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G ORDERING INFORMATION Device Package Shipping† MBRD320G 75 Units / Rail SBRD8320G* 75 Units / Rail SBRD8320G−VF01* 75 Units / Rail MBRD320RLG 1,800 Tape & Reel MBRD320T4G 2,500 Tape & Reel SBRD8320T4G* 2,500 Tape & Reel SBRD8320T4G−VF01* 2,500 Tape & Reel MBRD330G 75 Units / Rail SBRD8330G* 75 Units / Rail SBRD8330G−VF01* 75 Units / Rail MBRD330RLG 1,800 Tape & Reel MBRD330T4G 2,500 Tape & Reel SBRD8330T4G* 2,500 Tape & Reel SBRD8330T4G−VF01* 2,500 Tape & Reel MBRD340G 75 Units / Rail SBRD8340G* 75 Units / Rail SBRD8340G−VF01* 75 Units / Rail MBRD340RLG 1,800 Tape & Reel MBRD340T4G SBRD8340T4G* 2,500 Tape & Reel DPAK (Pb−Free) SBRD8340T4G−VF01* 2,500 Tape & Reel 2,500 Tape & Reel MBRD350G 75 Units / Rail SBRD8350G* 75 Units / Rail SBRD8350G−VF01* 75 Units / Rail MBRD350RLG 1,800 Tape & Reel SBRD8350RLG* 1,800 Tape & Reel SBRD8350RLG−VF01* 1,800 Tape & Reel MBRD350T4G 2,500 Tape & Reel SBRD8350T4G* 2,500 Tape & Reel SBRD8350T4G−VF01* 2,500 Tape & Reel MBRD360G 75 Units / Rail SBRD8360G* 75 Units / Rail SBRD8360G−VF01* 75 Units / Rail MBRD360RLG 1,800 Tape & Reel SBRD8360RLG* 1,800 Tape & Reel SBRD8360RLG−VF01* 1,800 Tape & Reel MBRD360T4G 2,500 Tape & Reel NRVBD360VT4G* 2,500 Tape & Reel SBRD8360T4G* 2,500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBD and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 3 MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G TYPICAL CHARACTERISTICS 100 I R , REVERSE CURRENT (mA) 10 40 20 10 TJ = 150°C 125°C 4.0 2.0 1.0 100°C 75°C 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.001 25°C 0 TJ = 25°C 75°C 1.0 0.2 0.3 0.4 0.5 0.6 0.7 70 60 Figure 2. Typical Reverse Current 125°C 0.1 0.1 40 20 30 50 VR, REVERSE VOLTAGE (VOLTS) 10 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 150°C PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 0.8 0.9 1.0 1.1 10 SINE WAVE 9.0 TJ = 150°C 8.0 5 7.0 10 6.0 5.0 dc IPK/IAV = 20 SQUARE WAVE 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 3. Average Power Dissipation www.onsemi.com 4 9.0 10 MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G I F(AV) , AVERAGE FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 8.0 RATED VOLTAGE APPLIED 7.0 RqJC = 6°C/W 6.0 TJ = 150°C SINE WAVE OR SQUARE WAVE 5.0 4.0 3.0 dc 2.0 1.0 0 80 90 100 110 120 140 130 150 160 TC, CASE TEMPERATURE (°C) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case 4.0 RqJA = 80°C/W SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED TJ = 150°C 3.5 3.0 dc SQUARE WAVE OR SINE WAVE VR = 25 V 2.5 TJ = 125°C 2.0 1.5 TJ = 150°C 1.0 0.5 0 0 20 40 60 100 80 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Ambient C, CAPACITANCE (pF) 1K 700 500 300 200 TJ = 25°C 100 70 50 30 20 10 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance www.onsemi.com 5 60 70 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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