SURD8330T4G-VF01

Switch-mode Power Rectifier DPAK Surface Mount Package MURD330T4G, SURD8330T4G, SURD8330T4G-VF01 www.onsemi.com These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ULTRAFAST RECTIFIER 3 A, 300 V Features • • • • • Low Forward Voltage Drop Low Leakage Ultra−Fast Recovery Time SURD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK CASE 369C 1 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Value Unit Rated Reverse Voltage VR 300 V Average Rectified Forward Current (TC = 170°C) IF Non−Repetitive Peak Surge Current IFSM 75 A TJ, Tstg −55 to +175 °C Operating Junction and Storage Temperature Range 4 3 A 3.0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 U330 A Y WW G AYWW U330G = Specific Device Code = Assembly Location* = Year = Work Week = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MURD330T4G DPAK (Pb−Free) 2,500/Tape & Reel SURD8330T4G DPAK (Pb−Free) 2,500/Tape & Reel SURD8330T4G− VF01 DPAK (Pb−Free) 2,500/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2020 − Rev. 7 1 Publication Order Number: MURD330/D MURD330T4G, SURD8330T4G, SURD8330T4G−VF01 THERMAL CHARACTERISTICS Characteristics Thermal Resistance − Junction−to−Case Thermal Resistance − Junction−to−Ambient (Note 1) 1. Rating applies when surface mounted on a 700 mm2, Symbol Value Unit RqJC 2 °C/W RqJA 49 °C/W Symbol Value Unit 1 oz Cu heat spreader. ELECTRICAL CHARACTERISTICS Characteristics Maximum Instantaneous Forward Voltage Drop (IF = 3 A, TJ = 25°C) (iF = 3 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (TJ = 25°C, 300 V) (TJ = 150°C, 300 V) IR Maximum Reverse Recovery Time (IF = 1 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25°C) trr V 1.15 0.92 mA 5 500 ns 50 ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) IRM 1.5 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 100.0 10.0 1.0 175°C 0.1 0.4 0.5 0.6 150°C 0.7 0.8 0.9 25°C 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS VOLTAGE (V) 1.4 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 100.0 10.0 175°C 1.0 0.1 0.4 0.5 Figure 1. Typical Forward Voltage 0.6 0.7 150°C 0.8 0.9 1.0 25°C 1.1 1.2 1.3 VF, INSTANTANEOUS VOLTAGE (V) Figure 2. Maximum Forward Voltage www.onsemi.com 2 1.4 MURD330T4G, SURD8330T4G, SURD8330T4G−VF01 1.0E−02 1.0E−02 1.0E−03 1.0E−03 1.0E−04 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) TYPICAL CHARACTERISTICS 175°C 1.0E−05 150°C 1.0E−06 1.0E−07 25°C 1.0E−08 1.0E−09 1.0E−10 0.0 50 100 150 200 250 300 175°C 150°C 1.0E−04 1.0E−05 1.0E−06 25°C 1.0E−07 1.0E−08 1.0E−09 1.0E−10 0.0 50 100 VR, REVERSE VOLTAGE (V) C, CAPACITANCE (pF) 100 10 0 20 40 60 80 100 120 140 160 180 200 3.0 SQUARE WAVE 2.5 1.5 1.0 0.5 0 0 0.5 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 5.0 DC 2.0 1.0 0 100 110 120 130 140 150 160 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 6. Power Dissipation RqJC = 2°C/W 3.0 DC 2.0 Io, AVERAGE FORWARD CURRENT 6.0 SQUARE WAVE 300 3.5 Figure 5. Typical Capacitance TJ = 175°C/W 250 4.0 VR, REVERSE VOLTAGE (VOLTS) 4.0 200 Figure 4. Maximum Reverse Voltage Po, AVERAGE POWER DISSIPATION (W) Figure 3. Typical Reverse Voltage 1.0 150 VR, REVERSE VOLTAGE (V) 170 180 6.0 RqJC = 2°C/W 5.0 TJ = 175°C/W 4.0 DC 3.0 SQUARE WAVE 2.0 1.0 0 0 TC, CASE TEMPERATURE (°C) 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (°C) Figure 7. Current Derating, Case Figure 8. Current Derating, Ambient www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 B c2 4 L3 Z D 1 L4 C A 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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