JANTXV2N6989U

Product Bulletin JANTX, JANTXV, 2N6989U January 1996 Surface Mount Quad NPN Transistor Type JANTX, JANTXV, 2N6989U Features • Ceramic surface mount package • Hermetically sealed • Small package minimizes circuit board area required • Electrical performance similar to a 2N2222A • Qualification per MIL-PRF-19500/559 Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 V Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA Operating Junction Temperature(TJ) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Storage Junction Temperature (Tstg) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Power Dissipation TA = 25o C (four devices driven equally) . . . . . . . . . . . . . . . 1.0 W(1) Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 Vdc Notes: (1) Derate linearly 8.57 mW/oC above 25o C. Description The JANTX2N6989U is a hermetically sealed, ceramic surface-mount device, consisting of four individual silicon NPN transistors. The 20 pin ceramic package is ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is VCB = 30 V, PD = 250 mW each transistor, TA = 25o C. Refer to MIL-PRF-19500/559 for complete requirements. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-20 (972)323-2200 Fax (972)323-2396 Type JANTX, JANTXV, 2N6989U Electrical Characterics (TA = 25o C unless otherwise noted) SYMBOL Off Characteristics V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICBO2 IEBO hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 VBE(SAT)3 hfe hfe Cobo Cibo ton toff Rt-t PARAMETER MIN MAX UNITS 75 50 6 10 10 10 50 75 100 100 30 35 0.3 1.0 0.45 0.6 1.2 2.0 1.4 V V V V V V 300 325 V V V nA µA nA IC = 10 µA IC = 10 mA(2) IE = 10 µA VCB = 60 V TEST CONDITIONS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Forward Current Transfer Ratio Forward Current Transfer Ratio Forward Current Transfer Ratio Forward Current Transfer Ratio Forward Current Transfer Ratio Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio Small-Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Input Capacitance Turn-On Time Turn-Off Time Isolation Resistance VCB = 60 V, TA = 150o C VEB = 4 V VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA(2) VCE = 10 V, IC = 150 mA(2) VCE = 10 V, IC = 500 mA(2) VCE = 10 V, IC = 10 mA, TA = 55o C(2) IC = 150 mA, IB = 15 mA(2) IC = 500 mA, IB = 50 mA(2) IC = 150 mA, IB = 15 mA, TA = 150o C(2) IC = 150 mA, IB = 15 mA(2) IC = 500 mA, IB = 50 mA(2) IC = 150 mA, IB = 15 mA, TA = 55o C(2) VCE = 10 V, IC = 20 mA, f = 100 MHz VCE = 10 V, IC = 1 mA, f = 1kHz On Characteristics Small-Signal Characteristics 2.5 50 8 33 35 300 10k pF pF ns ns MΩ 8.0 VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1 MHz VCC = 30 V, IC = 150 mA, IB = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA Vt-t = 500 V Switching Charateristics Transistor to Transistor Isolation (2) Pulsed Test: Pulse Width = 300 µs ±50, 1-2 % Duty Cycle. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-21 (972)323-2200 Fax (972)323-2396