131234

INFRA-RED 1. 2. 2.1 2.2 Item No.: 131234 This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-GaAlAs 365 120 280 typ. p-Epitaxy GaAs n-Epitaxy GaAs n-Substrate GaAs 365 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25°C) n-Electrode Parameter Forward voltage Reverse current Symbol VF IR Conditions min typ max Unit V A mW ns nm IF = 20 mA 1,20 1,40 IR = 5 V 10 IF = 20 mA 2,0 2,4 output Power * Φe IF = 50 mA 5,0 6,0 Switching time tr, tf IF = 20 mA 500 Peak wavelength IF = 20 mA 950 λP * On request, wafers will be delivered according to output power classes Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com