SFH9210_05

Reflexlichtschranke mit VCSEL-Sender Reflective Interrupter with VCSEL-Emitter Lead (Pb) Free Product - RoHS Compliant SFH 9210 Wesentliche Merkmale • Großer Arbeitsabstand (2-10mm) • IR-GaAs-VCSEL (Vertical Cavity Surface Emitting Laser)in Kombination mit einem Si-NPN-Fototransistor • Enge Strahlverteilung des Senders • Tageslichtsperrfilter Anwendungen • • • • Positionssensor Endabschaltung Drehzahlüberwachung, -regelung Bewegungssensor Features • Long operating distance (2-10mm) • IR-GaAs-VCSEL (Vertical Cavity Surface Emitting Laser) in combination with a Silicon NPN phototransistor • Narrow beam characteristics of the emitter • Daylight cut-off filter Applications • • • • Position sensor End position switch Speed monitoring and regulating Motion sensor Typ Type SFH 9210 Bestellnummer Ordering Code Q65110A2713 ICE [mA] (IF = 8 mA, VCE = 5 V, d = 5 mm) (see note on page 5) 1 .... 8 Beim Betrieb dieses Bauteils sind die Sicherheitsvorschriften für die Laserklasse 1M nach IEC 60825-1 Am. 2 zu beachten. Operating this device the safety instructions for laser class 1M according to IEC 60825-1 Am. 2 have to be observed. ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device 2005-02-18 1 SFH 9210 Grenzwerte Maximum Ratings Bezeichnung Parameter Sender (GaAs-VCSEL-Diode) Emitter (GaAs VCSEL diode) Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Verlustleistung Power dissipation Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage Kollektor-Emitter-Sperrspannung, (t ≤ 2 min) Collector-emitter voltage, (t ≤ 2 min) Emitter-Kollektor-Sperrspannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation Reflexlichtschranke Reflective Interrupter Lagertemperatur Storage temperature range Betriebstemperatur Operating temperature range Elektrostatische Entladung Electrostatic discharge Umweltbedingungen / Environment conditions Symbol Symbol Wert Value Einheit Unit VR IF Ptot 3 10 25 V mA mW VCE VCE VEC IC Ptot 16 30 7 20 100 V mA mW Tstg TOP ESD - 40 … + 85 - 40 … + 85 400 °C V 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) 2005-02-18 2 SFH 9210 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Sender (GaAs-VCSEL-Diode) Emitter (GaAs-VCSEL diode) Wellenlänge der Strahlung Wavelength at peak emission IF = 8 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax I F = 8 mA Schwellenstrom1) Threshold current1) Durchlaβspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 3 V Kapazität Capacitance VR = 0 V, f = 1 MHz Wärmewiderstand2) Thermal resistance2) Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Kapazität Capacitance VCE = 5 V, f = 1 MHz Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, EV = 1000 Lx Wärmewiderstand2) Thermal resistance2) λpeak 850 nm Symbol Symbol Wert Value Einheit Unit ∆λ 1 nm Ith VF 2.6 ( 5 mm2 Padgröβe Mounting on pcb with > 5 mm2 pad size 3) Nur eine Gruppe innerhalb einer Verpackungseinheit. Bezug von Einzelgruppen ist nicht möglich. Only single group within one packing unit. Single bins can not be ordered. d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 2005-02-18 4 SFH 9210 Schaltzeiten (TA = 25 °C, VCC = 5 V, IC = 1 mA1), RL = 1 kΩ) Switching Times ΙF RL VCC Output ΙC OHM02258 Bezeichnung Parameter Einschaltzeit Turn-on time Anstiegzeit Rise time Ausschaltzeit Turn-off time Abfallzeit Fall time 1) Symbol Symbol Wert Value 65 50 55 50 Einheit Unit µs µs µs µs tein ton tr taus toff tf IC eingestellt über den Durchlassstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) Anm.:- Es wird empfohlen die Lichtschranke bei dem spezifizierten Arbeitpunkt von ca. 8mA für den Emitter einzusetzten, weil andere Betriebsströme zu einem größeren Streubereich beim Koppelfaktor führen. Der Abgleich erfolgt über den Arbeitswiderstand am Detektor. Von einem Einsatz der Lichtschranke mit glänzenden oder gar spiegelnden Oberflächen wird abgeraten. Die Abstrahlcharakteristik des Senders ändert sich sowohl über die Temperatur als auch mit dem Flußstrom stärker als bei Standardemittern und führt somit ebenfalls zur Erhöhung des Streubereichs beim Koppelfaktor. Bei diffuser Streuung ist dieser Einfluß jedoch gering, und kann für die meisten Anwendungen vernachlässigt werden. Note: It is recomended to use the interrupter at the specified emitter current of about 8mA, as other operating currents lead to a larger coupling factor variation. The tuning is done using the operating resistor on the detector side. It is not recomended to use the interrupter in combination with shiny or mirror like surfaces. Changes in temperatures and operating current are having a bigger influence on the radiation characteristic as it is the case for standard emitters. This means a higher variance of the coupling factor. For diffuse surfaces the mentioned influence is low, and can be neglected for most of the applications. 2005-02-18 5 SFH 9210 CCollector Current --------I Cmax Kodak 90% I = f(d) Switching Characteristics t = f (RL) TA = 25 °C, IF = 8 mA 10 3 t OHO00785 Transistor Capacitance (typ.) CCE = f (VCE), TA = 25 °C, f = 1 MHz 50 pF OHO00374 1.2 I C;rel 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 mm 20 d µs Ι C = 100 µ A t on t off C CE 40 35 30 25 10 2 t on t off 20 15 10 5 Ι C = 1 mA 10 1 10 -1 10 0 kΩ RL 0 10 1 10 -2 10 -1 10 0 10 1 V VCE 10 2 Max. Permissible Forward Current IF = f (TA) Forward Current IF = f (VF) IF 102 mA 101 OHF00143 Threshold Current Ith = f (TΑ) 4.0 Ith mA 3.5 3.0 2.5 2.0 OHF00145 100 10 -1 1.5 1.0 0.5 10-2 10-3 0 0.5 1 1.5 2 V 2.5 0 0 20 40 60 80 ˚C 100 VF Radiation characteristics Ιrel = f (ϕ) 40˚ 30˚ 20˚ ϕ TA IF =10mA OHF00144 10˚ 0˚ 1.0 Collector Current IC = f (IF), d = 5 mm, Kodak 90% 1.2 I C;rel 1.0 0.8 0.6 0.4 0.2 0.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 90˚ 0.2 0 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0 5 mA IF 10 2005-02-18 6 Maßzeichnung Package Outlines 6.2 (0.244) 0...0.1 (0...0.004) 0.2 M A 0.15 (0.006) 0.13 (0.005) (0.05 (0.002) typ.) 5.8 (0.228) 3.4 (0.134) 3.0 (0.118) (5˚) 4.2 (0.165) 3.8 (0.150) B A (1.2 (0.047) typ.) 0.5 (0.020) 0.3 (0.012) (0.47 (0.019) typ.) 1 2 3 6 5 4 Chip Positionen 0.1 M B Empfänger/Receiver GPLY0505 Type SFH 9210 1 Anode 2 – 3 Emitter (0.1 (0.004) typ.) Sender/Emitter 1.27 (0.050) Raster (spacing) 4 Collector 2.54 (0.100) Raster (spacing) 5 – 6 Cathode Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2.1 (0.083) 1.7 (0.067) SFH 9210 Empfohlenes Lötpaddesign Recommended Solder Pad IR-Reflow Löten IR Reflow Soldering 1.27 (0.050) 0.6 (0.024) 1.2 (0.047) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved Heat dissipation 1.27 (0.050) Cu-Fläche >5 mm 2 Cu-area >5 mm 2 Lötstopplack Solder resist 3.9 (0.154) OHPY0030 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2005-02-18 8 SFH 9210 Löthinweise Soldering Conditions Bauform Type Drypack Tauch-, Schwalllötung Reflowlötung Level acc. Dip, Wave Soldering Reflow Soldering to Peak Temp. Max. Time in Peak Temp. Max. Time IPS-stand. (solderbath) Peak Zone (package in Peak 020 temp.) Zone 4 n. a. – 260 °C 20 sec. Kolbenlötung Iron Soldering (Iron temp.) SFH 9210 n.a. Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Lötbedingungen Soldering Conditions IR-Reflow Lötprofil für bleifreies Löten IR Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020B) (acc. to J-STD-020B) 300 ˚C 255 ˚C 240 ˚C 217 ˚C 200 OHLA0687 T 250 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile ˚C 260 ˚C +0˚C -5 245 ˚C ±5 ˚C ˚C 235 ˚C +5˚C -0 10 s min 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 25 ˚C 0 0 50 100 150 200 100 s max Ramp Down 6 K/s (max) 50 250 s 300 t 2005-02-18 9 SFH 9210 Gurtung / Polarität und Lage siehe Dokument: Short Form Katalog: Gurtung und Verpackung - SMT-Bauelemente - Gehäuse:SMT RLS Methode of Taping / Polarity and Orientation see document: Short Form Catalog: Tape and Reel SMT-Components - Package: SMT-RLS Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered 2005-02-18 10