2SC5553

Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5° 26.5±0.5 (23.4) 5° 5° 5° 0.7±0.1 I Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) (4.5) (2.0) 18.6±0.5 (2.0) Solder Dip (4.0) 2.0±0.2 1.1±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 2 5 ° C Ta = 2 5 ° C Tj Tstg VEBO ICP IC IB PC Rating 1 700 1 700 600 7 30 22 11 70 3.5 150 −55 to +150 °C °C Unit V V V V A A A W 5.45±0.3 10.9±0.5 3.3±0.3 5° 1 2 3 5.5±0.3 1: Base 2: Collector 3: Emitter TOP-3E Package Marking Symbol: C5553 Internal Connection C B Junction temperature Storage temperature (2.0) E I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2.75 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 11 A, Resistance loaded IB1 = 2.75 A, IB2 = −5.5 A 3 3.0 0.2 6 Min Typ Max 50 1 50 12 3 1.5 V V MHz µs µs Unit µA mA µA 22.0±0.5 (1.2) 1 2SC5553 PC  Ta 100 90 80 70 (1) 60 50 40 30 20 10 0 0 25 (2) (3) 50 75 100 125 150 175 (1) TC = Ta (2) With a 100 × 100 × 2 mm3 Al heat sink (3) Without heat sink Power Transistors p Area of safe operation (ASO) 100 30 ICP IC Non repetitive pulse TC = 25°C t = 1 ms t = 100 µs 35 30 Area of safe operation, horizontal operation ASO f = 64 kHz, TC < 90°C Area of safe operation for the single pulse load curve due to discharge in the highvoltage rectifier tube during horizontal operation Collector power dissipation PC (W) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 DC t = 10 ms Collector current IC (A) 25 20 15 10 5 0.003 0.001 0 < 1 mA 0 500 1 000 1 500 2 000 1 2 5 10 20 50 100 200 500 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) 2