2SD2479

Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification 10.8±0.2 7.5±0.2 3.8±0.2 4.5±0.2 ■ Features • High forward current transfer ratio hFE • Allowing supply with the radial taping 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.5 150 −55 to +150 Unit V V V A A W °C °C 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package Internal Connection B C E ≈ 200 Ω ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency *1 Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Conditions IC = 100 µA, IE = 0 IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCB = 10 V, IE = −50 mA, f = 200 MHz Min 120 100 5 Typ Max Unit V V V µA µA  V V MHz 0.1 1 4 000 40 000 1.5 2 150 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q R S 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 Publication date: February 2003 SJD00269BED 1 2SD2479 PC  Ta 1.6 Ta = 25°C 4 1.2 IC  VCE 1.2 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 2 0.3 mA IC  VBE VCE = 10 V Collector power dissipation PC (mW) Collector current IC (A) Collector current IC (A) Ta = 85°C 0.8 25°C 3 0.8 −25°C 0.4 0.4 0.2 mA 1 0.1 mA 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 1 2 3 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VBE(sat)  IC Base-emitter saturation voltage VBE(sat) (V) IC / IB = 1 000 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 1 000 hFE  IC 10 000 VCE = 10 V 10 Forward current transfer ratio hFE 8 000 Ta = 85°C 6 000 25°C 4 000 −25°C 2 000 Ta = −25°C 25°C 1 85°C 10 Ta = 85°C 25°C 1 −25°C 0.1 1 10 102 103 104 0.1 1 10 102 103 104 0 1 10 102 103 104 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25°C 100 10 0 10 20 30 40 Collector-base voltage VCB (V) 2 SJD00269BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL