FJ330301

This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301 Silicon P-channel MOS FET For switching circuits  Overview FJ330301 is P-channel small signal MOS FET employed small size surface mounting package.  Package  ode C SSSMini3-F2-B  in Name P 1: Gate 2: Source 3: Drain  Features  Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V)  High-speed switching  Small size surface mounting package: SSSMini3-F2-B  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Marking Symbol: U1  Internal Connection (D) 3  Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Rating -30 ±12 -100 -200 100 150 –55 to +150 Unit V V mA mA mW °C °C 1 (G) 2 (S) Publication date: January 2011 Ver. CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301  Electrical Characteristics Ta = 25°C±3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time * Symbol VDSS IDSS IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff VDD = -3 V, VGS = 0 V to -3 V, ID = -10 mA VDD = -3 V, VGS = -3 V to 0 V, ID = -10 mA VDS = -3 V, VGS = 0, f = 1 MHz Conditions ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VGS = ±10 V, VDS = 0 ID = -1.0 mA, VDS = -3.0 V ID = -10 mA, VGS = -2.5 V ID = -10 mA, VGS = -4.0 V ID = -10 mA, VDS = -3 V 20 - 0.5 - 1.0 7 4 40 12 7 3 100 100 Min -30 -1.0 ±10 -1.5 17 7 Typ Max Unit V mA mA V W W mS pF pF pF ns ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = −3 V ID = −10 mA RL = 300 Ω VOUT D VIN 10% 90% 90% 10% td(on) tr td(off) tf VGS = 0 V to −3 V VIN 50 Ω G VOUT S 2 Ver. CED This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301 FJ330301_ ID-VDS −100 ID  VDS Ta = 25°C VGS = −4.5 V −2.5 V −102 VDS = −3 V −10 FJ330301_ ID-VGS ID  VGS FJ330301_ RDS(on)-VGS 103 RDS(on)  VGS −80 Drain-source ON resistance RDS(on) (Ω) Ta = 25°C ID = 0.01 A Drain current ID (mA) Drain current ID (mA) −60 −1 Ta = 85°C 102 −40 −10−1 25°C 10 −20 −1.5 V −10−2 −30°C 0 0 − 0.1 − 0.2 − 0.3 − 0.4 − 0.5 −10−3 0 − 0.5 −1.0 −1.5 −2.0 1 0 −2 −4 −6 −8 −10 Drain-source voltage VDS (V) FJ330301_ RDS(on)-ID Gate-source voltage VGS (V) FJ330301_ PD-Ta Gate-source voltage VGS (V) Area of safe operation for the FJ330301 RDS(on)  ID PD  Ta Safe operation area 102 Ta = 25°C 120 100 −103 Drain-source ON resistance RDS(on) (Ω) Ta = 25°C Glass epoxy board (25.4 mm× 25.4 mm × t0.8 mm) coated with copper foil, which has more than 300 mm2. IDP = − 0.2 A Limited by RDS(on) = 7 Ω (max) (VGS = −4.0 V) 10 ms 1s 100 ms DC Power dissipation PD (mW) 10 VGS = −2.5 V −4.0 V 80 60 40 20 0 1 Drain current ID (mA) 0 −102 −10 10−1 −10−1 −1 −10 −102 40 80 120 160 −1 −2 −10 −10−1 −1 −10 −102 Drain current ID (mA) FJ330301_Ciss , Crss , Coss -VDS Ambient temperature Ta (°C) FJ330301_|Yfs|-ID Drain-source voltage VDS (V) Ciss , Crss , Coss  VDS Yfs  ID Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) 25 Ta = 25°C 1 20 15 Ciss 10 Coss Crss 0 −5 −10 −15 −20 5 0 Forward transfer admittance |Yfs | (S) Ta = 25°C VDS = −3 V 10−1 10−2 10−3 −1 −10 −1 −10 −102 Drain-source voltage VDS (V) Drain current ID (mA) Ver. CED 3 This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301 SSSMini3-F2-B Unit: mm 0.30 −0.02 3 +0.05 0.80 ±0.05 1.20 ±0.05 1 2 0.20 −0.02 (0.4) (0.4) +0.05 (5°) 0.20 ±0.05 1.20 ±0.05 0.13 −0.02 +0.05 0.80 ±0.05 (5 ° ) 4 0 to 0.05 Ver. CED 0.52 ±0.03 (0.27) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. 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