PJSD05TS

PJSD03TS SERIES 120W, LOW CLAMPING VOLTAGE TVS FOR PROTECTION IN PORTABLE ELECTRONICS This tiny but powerful TVS/Zener Seires has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at 3.3V, 5V, 12V, 15V 24V and 36V .These devices come in the new standard SOD523 package making them suitable for Portable/Computing Electronics, where the board space is a premium. SPECIFICATION FEATURES 120W Power Dissipation (8/20µs Waveform) Very Low Leakage Current, Maximum of 5µA @ VRWM IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance SOD523 Package K A APPLICATIONS MP3 Players Digital Cameras GPS Mobile Phones and Accessories Notebook PC's SOD123 SOD523 MAXIMUM RATINGS Rating Peak Pulse Power (8/20µs Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 120 25 -55 to +150 -55 to +150 Units W kV °C °C ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Tj = 25°C Conditions Min Typical Max 3.3 I BR = 1mA VR = 3.3V I pp = 5 A 0 Vdc Bias f = 1MHz 3.3 Vdc Bias f = 1MHz Symbol V RWM VBR IR Vc Cj Cj Units V V PJSD03TS Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance 4.0 200 6.5 200 100 µA V pF pF 3/16/2006 Page 1 www.panjit.com PJSD03TS SERIES ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage V RWM VBR IR Vc Cj Cj I BR = 1mA VR = 5V I pp = 5 A 0 Vdc Bias f = 1MHz 5 Vdc Bias f = 1MHz Tj = 25°C Symbol Conditions Min Typical Max 5 6 5 9 110 60 Units V V µA V pF pF PJSD05TS Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance Parameter Symbol V RWM VBR IR Vc Cj Conditions Min Typical Max 12 Units V V PJSD12TS Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance I BR = 1mA VR = 12V I pp = 5 A 0 Vdc Bias f = 1MHz 13.3 5 17 60 µA V pF Parameter Symbol V RWM VBR IR Vc Cj Conditions Min Typical Max 15 Units V V PJSD15TS Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance I BR = 1mA VR = 15V I pp = 5 A 0 Vdc Bias f = 1MHz 16.6 5 22 50 µA V pF Parameter Symbol V RWM VBR IR Vc Cj Conditions Min Typical Max 24 Units V V PJSD24TS Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance I BR = 1mA VR = 24V I pp = 3 A 0 Vdc Bias f = 1MHz 26.7 5 32 25 µA V pF Parameter Symbol V RWM VBR IR Vc Cj Conditions Min Typical Max 36 Units V V PJSD36TS Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capacitance 3/16/2006 I BR = 1mA VR = 36V I pp = 1 A 0 Vdc Bias f = 1MHz 40 5 55 20 µA V pF Page 2 www.panjit.com PJSD03TS SERIES PACKAGE DIMENSIONS AND BOND PAD LAYOUT 3/16/2006 Page 3 www.panjit.com